digital experiment 2
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EXPERIMENT-2STUDY OF CMOS INVERTER CHARACTERISTICS15MVD0001
Experiment Date: 21 July 2015 Submitted Date: 04 July 2015 Name: GUNISETTY RAVI TEJAM.Tech-VLSI DESIGN 15MVD0001
TITLE: STUDY OF CMOS INVERTER CHARACTERISTICSOBJECTIVES:1. To study the DC Characteristics of CMOS Inverter 2. To calculate the noise margin for the symmetric inverter3. To measure the delay between the input and the output.4. To compute Power consumption for the inverterTOOL: Cadence virtuoso 6.1
CIRCUIT DIAGRAM & PROCEDURE:
Circuit - 1 for CMOS DC Response:
i) Calculation of width of PMOS transistor in Inverter circuit:
For Symmetric CMOS inverter the threshold point Vm should be at centre i.e. (0.75, 0.75).We have = Kp is found out to be 118.34uA/V2Kn is found out to be 286 uA/V2 from previous experiment.
From the above given expression we obtain the value of Wp to be 290nm.
For DC characteristics of CMOS inverter the parameters are Selected NMOS transistor: - gpdk090_nmos1v NMOS Width:-120nm NMOS Length:-100nm Selected PMOS transistor: - gpdk090_pmos1v PMOS Width:-290nm PMOS Length:-100nm
Circuit- 2 for CMOS Transient Response:
For Transient characteristics the parameters are Selected NMOS transistor: - gpdk090_nmos1v NMOS Width:-120nm NMOS Length:-100nm Selected PMOS transistor: - gpdk090_pmos1v PMOS Width:-290nm PMOS Length:-100nm For VPULSE-Voltage1=0VVoltage2=1.5VRise time = 2ps Pulse width=10nsPeriod=20ns Delay time = 0ns; Fall time=2ps
Circuit-3 for CMOS Transient Response with 20fF load:
i) Go to Outputs save allenable all pubRun transientii) Go to Browseropen resultspsf files click on powerThe characteristics of the transistors remain same as the above but this circuit has an extra capacitive loadCircuit-4 for CMOS Transient Response with 50fF load:
i) Go to Outputs save allenable all pubRun transientii) Go to Browseropen resultspsf files click on power
The characteristics of the transistors remain same as the above but this circuit has an extra capacitive load of 50fF.
RESULTS: a) For CMOS DC response:
From the above graph we note that the threshold point for the given specification of the transistor is 735.392mV VOH : 1.5V VOL :1mV
Parametric analysis for different widths of PMOS transistor:For PMOS widths of 270nm, 315nm, 350nm we have observed the shift in threshold voltage of CMOS inverter.
For Noise Margin:The derivative of the Voltage transfer curve is taken and points where the gain is -1 is noted down for VIH and VIL values.
VIL : 578.868mV
Noise margin = min(NMH , NML)
NMH = VOH VIH = 0.555118
NML = VIL VOL = 0.578868
Hence noise margin is 0.555118V
b) For CMOS transient analysis:
The spikes obtained in the graph are as a result of the rise time delay in input and fall time delay in the output. The delays can be seen in the below graph.
The delays observed from transient analysis of a CMOS inverter without any load capacitance are:
tphl = 4.427 ps
tplh = 3.475ps
tp = = 3.951ps
The propogation delay is observed to be 3.951 ps
c) AVERAGE POWER CALCULATIONS:
Power calculation Graph for no load
The average power consumed by the cmos when no load is connected is 187.6 nW
Power calculation Graph for the capacitive load of 20fF
The average power consumed by the cmos inverter when 20pF load is connected is 2.479 uW.
Power calculation Graph for the capacitive load of 50fF
The average power consumed by the cmos inverter when 50pF load is connected is 5.911 uW.
CONCLUSION:1. If the width of the PMOS is increased the transfer characteristics would shift towards right.2. The threshold point obtained is 735.392mV for PMOS width of 290nm.3. The propagation delay obtained is 3.951ps and we can observe that tplh< tphl.4. The average power dissipated by a CMOS inverter increases as we increase the load capacitance.5. Average power consumed by a CMOS invertera) Without load capacitance:187.6 nWb) With 20fF load capacitance:2.479 uWc) With 50fF load capacitance:5.911 uW
1. Design of analog CMOS integrated circuits- Behzad Razavi.
2. Digital integrated circuits(A design perspective)- Jan M. Rabaey