HA17741/PS
General-Purpose Operational Amplifier(Frequency Compensated)
Description
The HA17741/PS is an internal phase compensation high-performance operational amplifier, that isappropriate for use in a wide range of applications in the test and control fields.
Features
• High voltage gain : 106 dB (Typ)
• Wide output amplitude : ±13 V (Typ) (at RL ≥ 2 kΩ)
• Shorted output protection
• Adjustable offset voltage
• Internal phase compensation
Ordering Information
Application Type No. Package
Industrial use HA17741PS DP-8
Commercial use HA17741
Pin Arrangement
−
+
1
2
3
4
8
7
6
5
NC
VCC
Vout
OffsetNull
OffsetNull
Vin(−)
Vin(+)
VEE
(Top view)
HA17741/PS
2
Circuit Structure
VCC
Vout
VEE
To VCCTo VCC
Offset Null
Vin(+)
Vin(−)
Pin5Pin1
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol HA17741PS HA17741 Unit
Power-supply voltage VCC +18 +18 V
VEE –18 –18 V
Input voltage Vin ±15 ±15 V
Differential input voltage Vin(diff) ±30 ±30 V
Allowable power dissipation PT 670 * 670 * mW
Operating temperature Topr –20 to +75 –20 to +75 °C
Storage temperature Tstg –55 to +125 –55 to +125 °C
Note: These are the allowable values up to Ta = 45°C. Derate by 8.3 mW/°C above that temperature.
HA17741/PS
3
Electrical Characteristics
Electrical Characteristics-1 (VCC = –VEE = 15 V, Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Input offset voltage VIO — 1.0 6.0 mV RS ≤ 10 kΩ
Input offset current IIO — 18 200 nA
Input bias current IIB — 75 500 nA
Power-supply ∆VIO/∆VCC — 30 150 µV/V RS ≤ 10 kΩ
rejection ratio ∆VIO/∆VEE — 30 150 µV/V RS ≤ 10 kΩ
Voltage gain AVD 86 106 — dB RL ≥ 2 kΩ, Vout = ±10 V
Common-moderejection ratio
CMR 70 90 — dB RS ≤ 10 kΩ
Common-mode inputvoltage range
VCM ±12 ±13 — V RS ≤ 10 kΩ
Maximum output VOP-P ±12 ±14 — V RL ≥ 10 kΩ
voltage amplitude ±10 ±13 — V RL ≥ 2 kΩ
Power dissipation Pd — 65 100 mW No load
Slew rate SR — 1.0 — V/µs RL ≥ 2 kΩ
Rise time tr — 0.3 — µs Vin = 20 mV, RL = 2 kΩ,
Overshoot Vover — 5.0 — % CL = 100 pF
Input resistance Rin 0.3 1.0 — MΩ
Electrical Characteristics-2 (VCC = –VEE = 15 V, Ta = –20 to +75°C)
Item Symbol Min Typ Max Unit Test Condition
Input offset voltage VIO — — 9.0 mV RS ≤ 10 kΩ
Input offset current IIO — — 400 nA
Input bias current IIB — — 1,100 nA
Voltage gain AVD 80 — — dB RL ≥ 2 kΩ, Vout = ±10 V
Maximum outputvoltage amplitude
VOP-P ±10 — — V RL ≥ 2 kΩ
HA17741/PS
4
IC Operational Amplifier Application Examples
Multivibrator
A multivibrator is a square wave generator that uses an RC circuit charge/discharge operation to generatethe waveform. Multivibrators are widely used as the square wave source in such applications as powersupplies and electronic switches.
Multivibrators are classified into three types, astable multivibrators, which have no stable states,monostable multivibrators, which have one stable state, and bistable multivibrators, which have two stablestates.
1. Astable Multivibrator
−
+
R3
VCC
VEE
Vout
R1
R2
RL
Vin(−)
Vin(+)C1
Figure 1 Astable Multivibrator Operating Circuit
Vin(+) 0
Vin(−) 0
Vout 0
Vertical: Horizontal:
Circuit constants R1 = 8 kΩ, R2 = 4 kΩ R3 = 100 kΩ, C1 = 0.1 µF RL = ∞ VCC = 15 V, VEE = −15 V
5 V/div2 ms/div
Figure 2 HA17741 Astable Multivibrator Operating Waveform
HA17741/PS
5
2. Monostable Multivibrator
−
+
R3
VCC
VEE
Vout
RL
R1R2
C2
C1
Input0
Figure 3 Monostable Multivibrator Operating Circuit
Vertical: Horizontal:
Circuit constants R1 = 10 kΩ, R2 = 2 kΩ R3 = 40 kΩ, C1 = 0.47 µF C2 = 0.0068 µF RL = ∞ VCC = 15 V, VEE = −15 V
Trigger input 0
Vin(+) 0
Vin(−) 0
Vout 0
Figure 4 HA17741 Monostable Multivibrator Operating Waveform
3. Bistable Multivibrator
−
+
Vin(−)
Vin(+)
Input0
C R2RL
VEE
VCC
R1
Vout
Figure 5 Bistable Multivibrator Operating Circuit
HA17741/PS
6
Trigger input 0
Vin(+) 0
Vout 0
Vertical: Horizontal:
Circuit constants
5 V/div2 ms/div
R1 = 10 kΩ, R2 = 2 kΩC = 0.0068 µFRL = ∞VCC = 15 V, VEE = −15 V
Figure 6 HA17741 Bistable Multivibrator Operating Waveform
Wien Bridge Sine Wave Oscillator
−
+
R4470 kΩ1 MΩ
1S2074 H
R3C32SK16 H
500 Ω Rin
C2 R2 C1R1
5.1 kΩ
RS
RL
50 kΩ
Vout
Figure 7 Wien Bridge Sine Wave Oscillator
VCC = 15 V, VEE = −15 VC1 = C2/10R1 = 110 kΩ, R2 = 11 kΩ
VOP-P = 2 V
VOP-P = 20 V
30 k
10 k
3 k
1 k
300
100
30
1030 p 100 p 300 p 1,000 p 3,000 p 0.01 µ 0.03 µ 0.1 µ
C1 Capacitance (F)
Osc
illat
or F
requ
ency
f (
Hz)
Figure 8 HA17741 Wien Bridge Sine Wave Oscillator f–C Characteristics
HA17741/PS
7
Vertical: Horizontal:
Test circuit condition
5 V/div0.5 ms/div
VCC = 15 V, VEE = −15 VR1 = 110 kΩ, R2 = 11 kΩC1 = 0.0015 µF, C2 = 0.015 µF
Test resultsf = 929.7 Hz, T.H.P = 0.06%
Figure 9 HA17741 Wien Bridge Sine Wave Oscillator Operating Waveform
Quadrature Oscillator
−
+A2
−
+A1
V4
R11
R22
R44
R33
V8
D1
D2
Cos outSin out
CT2
RT2
CT1
RT1 C1
R1
Figure 10 Quadrature Sine Wave Oscillator
Figure 10 shows the circuit diagram for a quadrature sine wave oscillator. This circuit consists of twointegrators and a limiter circuit, and provides not only a sine wave output, but also a cosine output, that is,it also supplies the waveform delayed by 90°. The output amplitude is essentially determined by the limitercircuit.
HA17741/PS
8
30
10
CT1 = 102 pFCT2 = 99 pFC1 = 106 pF
VCC = −VEE = 15 VRT1 = 150 kΩ, RT2 = 150 kΩR1 = 151.2 kΩR11 = 15 kΩ, R22 = 10 kΩR33 = 15 kΩ, R44 = 10 kΩCT1, CT2, C1 → 1,000 pFUse a Mylar capacitor.With VOP-P = 21 VP-P and R22 = R44 = 10 kΩ the frequency of the sine wave will be under 10 kHz.
Sin outCos out
3
1.0
0.3
0.1
0.03
0.01100 p 1,000 p 0.01 µ 0.1 µ
CT1, CT2, C1 (F)
Figure 11 HA17741 Quadrature Sine Wave Oscillator
f−CT1, CT2, C1 Characteristics
Vertical: Horizontal:Circuit constants
5 V/div0.2 ms/div
CT1 = 1000 pF (990), CT2 = 1000 pF (990)RT1 = 150 kΩ, RT2 = 150 kΩC1 = 1000 pF (990), R1 = 160 kΩR11 = 15 kΩ, R22 = 10 kΩR33 = 16 V, R44 = 10 kΩVCC = 15 V, VEE = −15 V
← Sin out
0
← Cos out
Figure 12 Sine and Cosine Output Waveforms
Triangular Wave Generator
−
+
A1
−
+
A2
D1 R3
D2 R4
C
R1R2
Vout2
VA
R1/R2
Vout1
Hysteresis comparator
Integrator
Figure 13 Triangular Wave Generator Operating Circuit
HA17741/PS
9
Vertical: Horizontal:
Circuit constants
10 V/div10 ms/div
VCC = 15 V, VEE = −15 VR1 = 10 kΩ, R2 = 20 kΩR3 = 100 kΩ, R4 = 200 kΩC = 0.1 µF
0
0
0
Vout1
Vout2
VA
Figure 14 HA17741 Triangular Wave Generator Operating Waveform
Sawtooth Waveform Generator
+
−
+
−
VinR2
6 kΩ
VA
R43 kΩ
VB
R3
6 kΩ
R1
IR52.7 kΩ
R62.7 kΩ
C1 Q1
VR
5 kΩ
2SC1706 H
Vout
R72.7 kΩ
R82.7 kΩ
VC
Figure 15 Sawtooth Waveform Generator
0
0
VR
Vout
Vertical: Horizontal:
Circuit constants
5 V/div2 ms/div
VCC = 15 V, VEE = −15 VR1 = 100 kΩ, C1 = 0.1 µFVin = 10 V
Figure 16 HA17741 Sawtooth Waveform Generator Operating Waveform
HA17741/PS
10
Characteristic Curves
2
3 1
5 6
±3 ±6 ±12 ±15
20
16
12
8
4
0
Inpu
t offs
et c
urre
nt I
IO (
nA)
Power-supply voltage VCC, VEE (V)
Input Offset Current vs.Power-Supply Voltage Characteristics
±9 ±18
R1
R2
R2R1R
a = 100%a = 0%
VEE
Voltage Offset Adjustment Circuit
±3 ±6 ±12 ±15
100
80
60
40
20
0
Pow
er d
issi
patio
n P
d (
mW
)
Power-supply voltage VCC, VEE (V)
Power Dissipation vs.Power-Supply Voltage Characteristics
±9 ±18 ±3 ±6 ±12 ±15
120
110
100
90
80
70
Vol
tage
gai
n A
VD (
dB)
Power-supply voltage VCC, VEE (V)
Voltage Gain vs.Power-Supply Voltage Characteristics
±9 ±18
RL ≥ 2 kΩ
No load
HA17741/PS
11
±3 ±6 ±12 ±15
20
16
12
8
4
0
Max
imum
out
put v
olta
ge a
mpl
itude
±VO
P-P
(V
)
Power-supply voltage VCC, VEE (V)
Maximum Output Voltage Amplitude vs.Power-Supply Voltage Characteristics
±9 ±18 −20 0 20 40 60
5
4
3
2
1
0
Inpu
t offs
et v
olta
ge V
IO (
mV
)
Ambient temperature Ta (°C)
Input Offset Voltage vs.Ambient Temperature Characteristics
80
VCC = +15 VVEE = −15 VRS ≤ 10 kΩ
RL ≥ 2 kΩ
−VOP-P+V
OP-P
−20 0 20 40 60
20
16
12
8
4
0
Inpu
t offs
et c
urre
nt I
IO (
nA)
Ambient temperature Ta (°C)
Input Offset Current vs.Ambient Temperature Characteristics
80 −20 0 20 40 60
120
100
80
60
40
20
0
Inpu
t bia
s cu
rren
t I IB
(nA
)
Ambient temperature Ta (°C)
Input Bias Current vs.Ambient Temperature Characteristics
80
VCC = +15 VVEE = −15 V
VCC = +15 VVEE = −15 V
HA17741/PS
12
−20 0 20 40 60
120
110
100
90
80
70
Vol
tage
gai
n A
VD (
dB)
Ambient temperature Ta (°C)
Voltage Gain vs.Ambient Temperature Characteristics
80−20 0 20 40 60
90
80
70
60
50
40
Pow
er d
issi
patio
n P
d (
mW
)
Power Dissipation vs.Ambient Temperature Characteristics
80
Ambient temperature Ta (°C)
VCC = +15 VVEE = −15 VNo load
VCC = +15 VVEE = −15 VRL ≥ 2 kΩ
−20 0 20 40 60
20
16
12
8
4
0
Out
put s
hort
ed c
urre
nt I
OS (
mA
)
Ambient temperature Ta (°C)
Output Shorted Current vs.Ambient Temperature Characteristics
80−20 0 40 60
16
12
8
4
0
−4
−8
−12Max
imum
out
put v
olta
ge a
mpl
itude
VO
P-P
(V
)
Maximum Output Voltage Amplitude vs.Ambient Temperature Characteristics
20 80
Ambient temperature Ta (°C)
VO = VCCVCC = +15 VVEE = −15 V
VCC = +15 VVEE = −15 VRL = 10 kΩ
HA17741/PS
13
200 500 1 k 2 k 5 k
16
12
8
4
0
−4
−8
−12Max
imum
out
put v
olta
ge a
mpl
itude
VO
P-P
(V
)
Max
imum
out
put v
olta
ge a
mpl
itude
VO
P-P
(V
)
Maximum Output Voltage Amplitude vs.Load Resistance Characteristics
10 k
Load resistance RL (Ω)
0
1.6
1.2
0.8
0.4
0
−0.4
−0.8
−1.2
−1.6
Out
put v
olta
ge V
out
(V)
20 40 60 80 100
VCC = +15 VVEE = −15 V
VCC = +15 V, VEE = −15 VR1 = 51 Ω, R2 = 5.1 kΩSee the voltage offset adjustment circuit diagram.
Offset AdjustmentCharacteristics
Resistor position a (%)
R = 10 kΩ
R = 5 kΩ
R = 20 kΩ
500 1 k 50 k 100 k
28
24
20
16
12
8
4
Frequency f (Hz)
Maximum Output Voltage Amplitude vs.Frequency Characteristics
200 2 k 5 k 10 k 20 k 200 k 500 k 100 500 1 k 50 k 100 k
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Inpu
t res
ista
nce
Rin
(M
Ω)
Frequency f (Hz)
Input Resistance vs.Frequency Characteristics
200 2 k 5 k 10 k 20 k 200 k 500 k 1 M0
VCC = +15 VVEE = −15 VRL = 10 kΩ
100
HA17741/PS
14
50 200 1 k 50 k 100 k
40
0
−40
−80
−120
−160
−200
Pha
se φ
(de
g.)
Frequency f (Hz)
Phase vs.Frequency Characteristics
100 2 k 5 k 10 k 20 k 200 k 500 k−240
500 1 M 2 M10 50 200 10 k 20 k
120
100
80
60
40
20
0
−20
Vol
tage
gai
n A
VD (
dB)
Frequency f (Hz)
Voltage Gain vsFrequency Characteristics
20 500 1 k 2 k 5 k 50 k 100 k40
100 500 k 2 M200 k 1 M
VCC = +15 VVEE = −15 VOpen loop
VCC = +15 VVEE = −15 VOpen loop
10 50 200 10 k 20 k
120
100
80
60
40
20
0
Vol
tage
gai
n A
VD (
dB)
Frequency f (Hz)
Voltage Gain and Phase vs.Frequency Characteristics (1)
20 500 1 k 2 k 5 k 50 k 100 k−20
100 200 k 500 k 1 M 2 M
10 50 200 10 k 20 k
120
100
80
60
40
20
0
−20
Vol
tage
gai
n A
VD (
dB)
Frequency f (Hz)
Voltage Gain and Phase vs.Frequency Characteristics (2)
20 500 1 k 2 k 5 k 50 k 100 k−40
100 200 k 500 k 1 M 2 M
VCC = +15 VVEE = −15 VClosed loop gain = 60 dB
VCC = +15 VVEE = −15 VClosed loop gain = 40 dB0
−60
−120
−180
0
−60
−120
−180
Pha
se φ
(de
g.)
Pha
se φ
(de
g.)
AVD
φ φ
AVD
HA17741/PS
15
10 50 200 10 k 20 k
120
100
80
60
40
20
0
−20
Vol
tage
gai
n A
VD (
dB)
Frequency f (Hz)
Voltage Gain and Phase vs.Frequency Characteristics (3)
20 500 1 k 2 k 5 k 50 k 100 k100 200 k 500 k 1 M 2 M
0
−60
−120
−180
Pha
se φ
(de
g.)
−40
VCC = +15 VVEE = −15 VClosed loop gain = 20 dB
AVD
φ
10 50 200 10 k 20 k
120
100
80
60
40
20
0
−20
Vol
tage
gai
n A
VD (
dB)
Frequency f (Hz)
Voltage Gain and Phase vs.Frequency Characteristics (4)
20 500 1 k 2 k 5 k 50 k 100 k100 200 k 500 k 1 M 2 M
0
−60
−120
−180
Pha
se φ
(de
g.)
−40
VCC = +15 VVEE = −15 VClosed loop gain = 0 dB
AVD
φ
2
36
±3 ±6 ±9 ±12 ±15
0.8
0.6
0.4
0.2
0
Ris
e tim
e t r
(µs
)
Power-supply voltage VCC, VEE (V)
Rise time vs.Power-Supply Voltage Characteristics
±18
Impulse ResponseCharacteristics Test Circuit
Vout
RLCL
V290%
10%
Vout
tr
V1
Vout = × 100 (%)V2
V1
Vin = 20 mVRL = 2 kΩCL = 100 pF
Vin
HA17741/PS
16
±3 ±6 ±9 ±12 ±15
40
30
20
10
0
Ove
rsho
ot V
over
(%
)
Power-supply voltage VCC, VEE (V)
Overshoot vs.Power-Supply Voltage Characteristics
±18 0 0.4 0.8 1.2
40
30
20
10
0Out
put v
olta
ge V
out
(mV
)
Time t (µs)
Impulse ResponseCharacteristics
1.6
Vin = 20 mVRL = 2 kΩCL = 100 pF
VCC = +15 VVEE = −15 VRL = 2 kΩCL = 100 pFVin = 20 mV
HA17741/PS
17
Package Dimensions
Hitachi CodeJEDECEIAJMass (reference value)
DP-8ConformsConforms0.54 g
Unit: mm
1 4
58
9.610.6 Max
0.89 1.36.
37.
4 M
ax2.
54 M
in5.
06 M
ax
2.54 ± 0.25 0.48 ± 0.10
7.62
0.25 + 0.10– 0.05
0° – 15°
0.1
Min
1.27 Max
HA17741/PS
18
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you havereceived the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially highquality and reliability or where its failure or malfunction may directly threaten human life or cause riskof bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withoutwritten approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductorproducts.
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Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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