ha17741 general purpose operational amplifier

HA17741/PS

General-Purpose Operational Amplifier(Frequency Compensated)

Description

The HA17741/PS is an internal phase compensation high-performance operational amplifier, that isappropriate for use in a wide range of applications in the test and control fields.

Features

• High voltage gain : 106 dB (Typ)

• Wide output amplitude : ±13 V (Typ) (at RL ≥ 2 kΩ)

• Shorted output protection

• Adjustable offset voltage

• Internal phase compensation

Ordering Information

Application Type No. Package

Industrial use HA17741PS DP-8

Commercial use HA17741

Pin Arrangement

−

+

1

2

3

4

8

7

6

5

NC

VCC

Vout

OffsetNull

OffsetNull

Vin(−)

Vin(+)

VEE

(Top view)

HA17741/PS

2

Circuit Structure

VCC

Vout

VEE

To VCCTo VCC

Offset Null

Vin(+)

Vin(−)

Pin5Pin1

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol HA17741PS HA17741 Unit

Power-supply voltage VCC +18 +18 V

VEE –18 –18 V

Input voltage Vin ±15 ±15 V

Differential input voltage Vin(diff) ±30 ±30 V

Allowable power dissipation PT 670 * 670 * mW

Operating temperature Topr –20 to +75 –20 to +75 °C

Storage temperature Tstg –55 to +125 –55 to +125 °C

Note: These are the allowable values up to Ta = 45°C. Derate by 8.3 mW/°C above that temperature.

HA17741/PS

3

Electrical Characteristics

Electrical Characteristics-1 (VCC = –VEE = 15 V, Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Input offset voltage VIO — 1.0 6.0 mV RS ≤ 10 kΩ

Input offset current IIO — 18 200 nA

Input bias current IIB — 75 500 nA

Power-supply ∆VIO/∆VCC — 30 150 µV/V RS ≤ 10 kΩ

rejection ratio ∆VIO/∆VEE — 30 150 µV/V RS ≤ 10 kΩ

Voltage gain AVD 86 106 — dB RL ≥ 2 kΩ, Vout = ±10 V

Common-moderejection ratio

CMR 70 90 — dB RS ≤ 10 kΩ

Common-mode inputvoltage range

VCM ±12 ±13 — V RS ≤ 10 kΩ

Maximum output VOP-P ±12 ±14 — V RL ≥ 10 kΩ

voltage amplitude ±10 ±13 — V RL ≥ 2 kΩ

Power dissipation Pd — 65 100 mW No load

Slew rate SR — 1.0 — V/µs RL ≥ 2 kΩ

Rise time tr — 0.3 — µs Vin = 20 mV, RL = 2 kΩ,

Overshoot Vover — 5.0 — % CL = 100 pF

Input resistance Rin 0.3 1.0 — MΩ

Electrical Characteristics-2 (VCC = –VEE = 15 V, Ta = –20 to +75°C)

Item Symbol Min Typ Max Unit Test Condition

Input offset voltage VIO — — 9.0 mV RS ≤ 10 kΩ

Input offset current IIO — — 400 nA

Input bias current IIB — — 1,100 nA

Voltage gain AVD 80 — — dB RL ≥ 2 kΩ, Vout = ±10 V

Maximum outputvoltage amplitude

VOP-P ±10 — — V RL ≥ 2 kΩ

HA17741/PS

4

IC Operational Amplifier Application Examples

Multivibrator

A multivibrator is a square wave generator that uses an RC circuit charge/discharge operation to generatethe waveform. Multivibrators are widely used as the square wave source in such applications as powersupplies and electronic switches.

Multivibrators are classified into three types, astable multivibrators, which have no stable states,monostable multivibrators, which have one stable state, and bistable multivibrators, which have two stablestates.

1. Astable Multivibrator

−

+

R3

VCC

VEE

Vout

R1

R2

RL

Vin(−)

Vin(+)C1

Figure 1 Astable Multivibrator Operating Circuit

Vin(+) 0

Vin(−) 0

Vout 0

Vertical: Horizontal:

Circuit constants R1 = 8 kΩ, R2 = 4 kΩ R3 = 100 kΩ, C1 = 0.1 µF RL = ∞ VCC = 15 V, VEE = −15 V

5 V/div2 ms/div

Figure 2 HA17741 Astable Multivibrator Operating Waveform

HA17741/PS

5

2. Monostable Multivibrator

−

+

R3

VCC

VEE

Vout

RL

R1R2

C2

C1

Input0

Figure 3 Monostable Multivibrator Operating Circuit


Circuit constants R1 = 10 kΩ, R2 = 2 kΩ R3 = 40 kΩ, C1 = 0.47 µF C2 = 0.0068 µF RL = ∞ VCC = 15 V, VEE = −15 V

Trigger input 0

Vin(+) 0

Vin(−) 0

Vout 0

Figure 4 HA17741 Monostable Multivibrator Operating Waveform

3. Bistable Multivibrator

−

+

Vin(−)

Vin(+)

Input0

C R2RL

VEE

VCC

R1

Vout

Figure 5 Bistable Multivibrator Operating Circuit

HA17741/PS

6

Trigger input 0

Vin(+) 0

Vout 0


Circuit constants

5 V/div2 ms/div

R1 = 10 kΩ, R2 = 2 kΩC = 0.0068 µFRL = ∞VCC = 15 V, VEE = −15 V

Figure 6 HA17741 Bistable Multivibrator Operating Waveform

Wien Bridge Sine Wave Oscillator

−

+

R4470 kΩ1 MΩ

1S2074 H

R3C32SK16 H

500 Ω Rin

C2 R2 C1R1

5.1 kΩ

RS

RL

50 kΩ

Vout

Figure 7 Wien Bridge Sine Wave Oscillator

VCC = 15 V, VEE = −15 VC1 = C2/10R1 = 110 kΩ, R2 = 11 kΩ

VOP-P = 2 V

VOP-P = 20 V

30 k

10 k

3 k

1 k

300

100

30

1030 p 100 p 300 p 1,000 p 3,000 p 0.01 µ 0.03 µ 0.1 µ

C1 Capacitance (F)

Osc

illat

or F

requ

ency

f (

Hz)

Figure 8 HA17741 Wien Bridge Sine Wave Oscillator f–C Characteristics

HA17741/PS

7


Test circuit condition

5 V/div0.5 ms/div

VCC = 15 V, VEE = −15 VR1 = 110 kΩ, R2 = 11 kΩC1 = 0.0015 µF, C2 = 0.015 µF

Test resultsf = 929.7 Hz, T.H.P = 0.06%

Figure 9 HA17741 Wien Bridge Sine Wave Oscillator Operating Waveform

Quadrature Oscillator

−

+A2

−

+A1

V4

R11

R22

R44

R33

V8

D1

D2

Cos outSin out

CT2

RT2

CT1

RT1 C1

R1

Figure 10 Quadrature Sine Wave Oscillator

Figure 10 shows the circuit diagram for a quadrature sine wave oscillator. This circuit consists of twointegrators and a limiter circuit, and provides not only a sine wave output, but also a cosine output, that is,it also supplies the waveform delayed by 90°. The output amplitude is essentially determined by the limitercircuit.

HA17741/PS

8

30

10

CT1 = 102 pFCT2 = 99 pFC1 = 106 pF

VCC = −VEE = 15 VRT1 = 150 kΩ, RT2 = 150 kΩR1 = 151.2 kΩR11 = 15 kΩ, R22 = 10 kΩR33 = 15 kΩ, R44 = 10 kΩCT1, CT2, C1 → 1,000 pFUse a Mylar capacitor.With VOP-P = 21 VP-P and R22 = R44 = 10 kΩ the frequency of the sine wave will be under 10 kHz.

Sin outCos out

3

1.0

0.3

0.1

0.03

0.01100 p 1,000 p 0.01 µ 0.1 µ

CT1, CT2, C1 (F)

Figure 11 HA17741 Quadrature Sine Wave Oscillator

f−CT1, CT2, C1 Characteristics

Vertical: Horizontal:Circuit constants

5 V/div0.2 ms/div

CT1 = 1000 pF (990), CT2 = 1000 pF (990)RT1 = 150 kΩ, RT2 = 150 kΩC1 = 1000 pF (990), R1 = 160 kΩR11 = 15 kΩ, R22 = 10 kΩR33 = 16 V, R44 = 10 kΩVCC = 15 V, VEE = −15 V

← Sin out

0

← Cos out

Figure 12 Sine and Cosine Output Waveforms

Triangular Wave Generator

−

+

A1

−

+

A2

D1 R3

D2 R4

C

R1R2

Vout2

VA

R1/R2

Vout1

Hysteresis comparator

Integrator

Figure 13 Triangular Wave Generator Operating Circuit

HA17741/PS

9


Circuit constants

10 V/div10 ms/div

VCC = 15 V, VEE = −15 VR1 = 10 kΩ, R2 = 20 kΩR3 = 100 kΩ, R4 = 200 kΩC = 0.1 µF

0

0

0

Vout1

Vout2

VA

Figure 14 HA17741 Triangular Wave Generator Operating Waveform

Sawtooth Waveform Generator

+

−

+

−

VinR2

6 kΩ

VA

R43 kΩ

VB

R3

6 kΩ

R1

IR52.7 kΩ

R62.7 kΩ

C1 Q1

VR

5 kΩ

2SC1706 H

Vout

R72.7 kΩ

R82.7 kΩ

VC

Figure 15 Sawtooth Waveform Generator

0

0

VR

Vout


Circuit constants

5 V/div2 ms/div

VCC = 15 V, VEE = −15 VR1 = 100 kΩ, C1 = 0.1 µFVin = 10 V

Figure 16 HA17741 Sawtooth Waveform Generator Operating Waveform

HA17741/PS

10

Characteristic Curves

2

3 1

5 6

±3 ±6 ±12 ±15

20

16

12

8

4

0

Inpu

t offs

et c

urre

nt I

IO (

nA)

Power-supply voltage VCC, VEE (V)

Input Offset Current vs.Power-Supply Voltage Characteristics

±9 ±18

R1

R2

R2R1R

a = 100%a = 0%

VEE

Voltage Offset Adjustment Circuit

±3 ±6 ±12 ±15

100

80

60

40

20

0

Pow

er d

issi

patio

n P

d (

mW

)


Power Dissipation vs.Power-Supply Voltage Characteristics

±9 ±18 ±3 ±6 ±12 ±15

120

110

100

90

80

70

Vol

tage

gai

n A

VD (

dB)


Voltage Gain vs.Power-Supply Voltage Characteristics

±9 ±18

RL ≥ 2 kΩ

No load

HA17741/PS

11

±3 ±6 ±12 ±15

20

16

12

8

4

0

Max

imum

out

put v

olta

ge a

mpl

itude

±VO

P-P

(V

)


Maximum Output Voltage Amplitude vs.Power-Supply Voltage Characteristics

±9 ±18 −20 0 20 40 60

5

4

3

2

1

0

Inpu

t offs

et v

olta

ge V

IO (

mV

)

Ambient temperature Ta (°C)

Input Offset Voltage vs.Ambient Temperature Characteristics

80

VCC = +15 VVEE = −15 VRS ≤ 10 kΩ

RL ≥ 2 kΩ

−VOP-P+V

OP-P

−20 0 20 40 60

20

16

12

8

4

0

Inpu

t offs

et c

urre

nt I

IO (

nA)


Input Offset Current vs.Ambient Temperature Characteristics

80 −20 0 20 40 60

120

100

80

60

40

20

0

Inpu

t bia

s cu

rren

t I IB

(nA

)


Input Bias Current vs.Ambient Temperature Characteristics

80

VCC = +15 VVEE = −15 V

VCC = +15 VVEE = −15 V

HA17741/PS

12

−20 0 20 40 60

120

110

100

90

80

70

Vol

tage

gai

n A

VD (

dB)


Voltage Gain vs.Ambient Temperature Characteristics

80−20 0 20 40 60

90

80

70

60

50

40

Pow

er d

issi

patio

n P

d (

mW

)

Power Dissipation vs.Ambient Temperature Characteristics

80


VCC = +15 VVEE = −15 VNo load

VCC = +15 VVEE = −15 VRL ≥ 2 kΩ

−20 0 20 40 60

20

16

12

8

4

0

Out

put s

hort

ed c

urre

nt I

OS (

mA

)


Output Shorted Current vs.Ambient Temperature Characteristics

80−20 0 40 60

16

12

8

4

0

−4

−8

−12Max

imum

out

put v

olta

ge a

mpl

itude

VO

P-P

(V

)

Maximum Output Voltage Amplitude vs.Ambient Temperature Characteristics

20 80


VO = VCCVCC = +15 VVEE = −15 V

VCC = +15 VVEE = −15 VRL = 10 kΩ

HA17741/PS

13

200 500 1 k 2 k 5 k

16

12

8

4

0

−4

−8

−12Max

imum

out

put v

olta

ge a

mpl

itude

VO

P-P

(V

)

Max

imum

out

put v

olta

ge a

mpl

itude

VO

P-P

(V

)

Maximum Output Voltage Amplitude vs.Load Resistance Characteristics

10 k

Load resistance RL (Ω)

0

1.6

1.2

0.8

0.4

0

−0.4

−0.8

−1.2

−1.6

Out

put v

olta

ge V

out

(V)

20 40 60 80 100

VCC = +15 VVEE = −15 V

VCC = +15 V, VEE = −15 VR1 = 51 Ω, R2 = 5.1 kΩSee the voltage offset adjustment circuit diagram.

Offset AdjustmentCharacteristics

Resistor position a (%)

R = 10 kΩ

R = 5 kΩ

R = 20 kΩ

500 1 k 50 k 100 k

28

24

20

16

12

8

4

Frequency f (Hz)

Maximum Output Voltage Amplitude vs.Frequency Characteristics

200 2 k 5 k 10 k 20 k 200 k 500 k 100 500 1 k 50 k 100 k

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

Inpu

t res

ista

nce

Rin

(M

Ω)

Frequency f (Hz)

Input Resistance vs.Frequency Characteristics

200 2 k 5 k 10 k 20 k 200 k 500 k 1 M0

VCC = +15 VVEE = −15 VRL = 10 kΩ

100

HA17741/PS

14

50 200 1 k 50 k 100 k

40

0

−40

−80

−120

−160

−200

Pha

se φ

(de

g.)

Frequency f (Hz)

Phase vs.Frequency Characteristics

100 2 k 5 k 10 k 20 k 200 k 500 k−240

500 1 M 2 M10 50 200 10 k 20 k

120

100

80

60

40

20

0

−20

Vol

tage

gai

n A

VD (

dB)

Frequency f (Hz)

Voltage Gain vsFrequency Characteristics

20 500 1 k 2 k 5 k 50 k 100 k40

100 500 k 2 M200 k 1 M

VCC = +15 VVEE = −15 VOpen loop

VCC = +15 VVEE = −15 VOpen loop

10 50 200 10 k 20 k

120

100

80

60

40

20

0

Vol

tage

gai

n A

VD (

dB)

Frequency f (Hz)

Voltage Gain and Phase vs.Frequency Characteristics (1)

20 500 1 k 2 k 5 k 50 k 100 k−20

100 200 k 500 k 1 M 2 M

10 50 200 10 k 20 k

120

100

80

60

40

20

0

−20

Vol

tage

gai

n A

VD (

dB)

Frequency f (Hz)


20 500 1 k 2 k 5 k 50 k 100 k−40

100 200 k 500 k 1 M 2 M

VCC = +15 VVEE = −15 VClosed loop gain = 60 dB

VCC = +15 VVEE = −15 VClosed loop gain = 40 dB0

−60

−120

−180

0

−60

−120

−180

Pha

se φ

(de

g.)

Pha

se φ

(de

g.)

AVD

φ φ

AVD

HA17741/PS

15

10 50 200 10 k 20 k

120

100

80

60

40

20

0

−20

Vol

tage

gai

n A

VD (

dB)

Frequency f (Hz)


20 500 1 k 2 k 5 k 50 k 100 k100 200 k 500 k 1 M 2 M

0

−60

−120

−180

Pha

se φ

(de

g.)

−40


AVD

φ

10 50 200 10 k 20 k

120

100

80

60

40

20

0

−20

Vol

tage

gai

n A

VD (

dB)

Frequency f (Hz)


20 500 1 k 2 k 5 k 50 k 100 k100 200 k 500 k 1 M 2 M

0

−60

−120

−180

Pha

se φ

(de

g.)

−40


AVD

φ

2

36

±3 ±6 ±9 ±12 ±15

0.8

0.6

0.4

0.2

0

Ris

e tim

e t r

(µs

)


Rise time vs.Power-Supply Voltage Characteristics

±18

Impulse ResponseCharacteristics Test Circuit

Vout

RLCL

V290%

10%

Vout

tr

V1

Vout = × 100 (%)V2

V1

Vin = 20 mVRL = 2 kΩCL = 100 pF

Vin

HA17741/PS

16

±3 ±6 ±9 ±12 ±15

40

30

20

10

0

Ove

rsho

ot V

over

(%

)


Overshoot vs.Power-Supply Voltage Characteristics

±18 0 0.4 0.8 1.2

40

30

20

10

0Out

put v

olta

ge V

out

(mV

)

Time t (µs)

Impulse ResponseCharacteristics

1.6

Vin = 20 mVRL = 2 kΩCL = 100 pF

VCC = +15 VVEE = −15 VRL = 2 kΩCL = 100 pFVin = 20 mV

HA17741/PS

17

Package Dimensions

Hitachi CodeJEDECEIAJMass (reference value)

DP-8ConformsConforms0.54 g

Unit: mm

1 4

58

9.610.6 Max

0.89 1.36.

37.

4 M

ax2.

54 M

in5.

06 M

ax

2.54 ± 0.25 0.48 ± 0.10

7.62

0.25 + 0.10– 0.05

0° – 15°

0.1

Min

1.27 Max

HA17741/PS

18

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you havereceived the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially highquality and reliability or where its failure or malfunction may directly threaten human life or cause riskof bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withoutwritten approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductorproducts.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533

URL NorthAmerica : http:semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong KongTel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.

Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: <44> (1628) 585000Fax: <44> (1628) 778322

Hitachi Europe GmbHElectronic components GroupDornacher Straβe 3D-85622 Feldkirchen, MunichGermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223

For further information write to:

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

http://www.datasheetcatalog.com



ha17741 general purpose operational amplifier

Devices & Hardware