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ECE407/507ECE407/507VLSI Digital Circuits
Lecture 01: Introduction
[Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.
And Prof. Mary Jane Irwin ‘s lecture notes and slides]
CSE477 L01 Introduction.1 Irwin&Vijay, PSU, 2002
Course Contents
Introduction to digital integrated circuitsC OS f C OSCMOS devices and manufacturing technology. CMOS logic gates and their layout. Propagation delay, noise margins, and power dissipation. Combinational (e.g., arithmetic) and sequential circuit design Memory designsequential circuit design. Memory design.
Course goalsAbility to design and implement CMOS digital circuits and optimize them with respect to different constraints: size (cost), speed, power dissipation, and reliability
Course prerequisitesECE 274. Basic Digital Circuit DesignECE 351A. Basic Micro ElectronicsECE304 Basic Analog Circuit Design
CSE477 L01 Introduction.2 Irwin&Vijay, PSU, 2002
Course AdministrationI t t J t WInstructor: Janet Wang
[email protected]://apache.ece.arizona.edu/~wml/public htmlp p p _ECE Building Rm 559Office Hrs: Mon, Weds 10:00-11:00
TA: QI JI
Friday lab sessions 9:00 9:50Friday lab sessions 9:00-9:50
Office Hrs : TBA
Labs: Accounts on ECE machine in Rm 232A or Rm 250A-B
URL: http://www.ece.arizona.edu/~ece507
Text: Digital Integrated Circuits 2nd Edition
CSE477 L01 Introduction.3 Irwin&Vijay, PSU, 2002
Text: Digital Integrated Circuits, 2 Edition Rabaey et. al.
Grading InformationG d d t i tGrade determinates
Two Midterm Exams ~40%Final Exam (only for undergraduate students) ~30%Final Exam (only for undergraduate students) ~30% Term Projects (only for Graduates) ~40%Homeworks ~10%Homeworks 10%Labs (teams of ~2)
- Undergraduates: Lab1-3: 10%, Lab 4: 10%- Graduates: Lab 1-3: 5%, lab 4: 5%.
Grade Curve will be posted on the course homepageMust submit email request for change of grade after discussions with the TA (Homeworks/Lab Assignments) or instructor (Exams)( )
CSE477 L01 Introduction.4 Irwin&Vijay, PSU, 2002
Background from ECE274, ECE351A and ECE304ECE304
Basic circuit theoryresistance, capacitance, inductanceMOS gate characteristics
Hardware description languageVHDL or verilog
Use of modern EDA toolssimulation, synthesis, validation (Synopsys)
Basic Logic designlogical minimization, Finite State Machines, and component g , , pdesign
CSE477 L01 Introduction.5 Irwin&Vijay, PSU, 2002
Courses Very Related
ECE 462/562 Computer ArchitectureECE 462/562 Computer ArchitectureInstructor: Prof. Ahmed Louri
ECE 474/574 Logic Circuit DesignInstructor: Prof. S. Lysecky
You should take these two courses if you are interested in IC design !!!in IC design !!!
CSE477 L01 Introduction.6 Irwin&Vijay, PSU, 2002
Course StructureDesign and tool intensive class
Magic for layout (Cadence Virtuoso as option)O li d t ti d t t i l- Online documentation and tutorials
HSPICE for circuit simulationCadence VLSI toolsCadence VLSI tools
Lecture tentative Schedule:2 k th CMOS i t2 weeks on the CMOS inverter 3 weeks on static and dynamic CMOS gates2 weeks on C R and L effects2 weeks on C, R, and L effects 2 week on sequential CMOS circuits 2 weeks on design of datapath structuresg2 weeks on memory design1 week on design for test, margining, scaling, trends
CSE477 L01 Introduction.7 Irwin&Vijay, PSU, 2002
1 week exams
Graduate Student Project List (tentative)
High Speed Link DesignHigh Speed Link Design
High Speed Router design
Chip Security Circuit Design
Chip ID designChip ID design
Chirp Communication Circuit Design
Random Number Generator Design
Sensors and Sensor fusion circuit DesignSensors and Sensor fusion circuit Design
CSE477 L01 Introduction.8 Irwin&Vijay, PSU, 2002
August-September ScheduleLab tutor sessions start on Sept. 5
Sept 1 Sept 29 no lectures (Sept 1 Labor day SeptSept. 1, Sept. 29 no lectures (Sept. 1 Labor day, Sept. 29 instructor on trip)
Aug. 24 Lecture 1: IntroductionAug. 26 Lecture 2: Design MetricsAug 28 No LectureAug 31 Lecture 3: MOS transistorsAug.31 Lecture 3: MOS transistorsSept. 2 Lecture 4: Static InverterSept. 4 Tutor Session: Cadence Flow SetupSept. 7 No ClassSept. 9 Lecture 5: FabricationSept 11 Lecture 6: Static LogicSept. 11 Lecture 6: Static LogicSept. 13 Lecture 7: Pass Transistor LogicSept. 15 Lecture 8: Capacitance
CSE477 L01 Introduction.9 Irwin&Vijay, PSU, 2002
Sept. 17 Tutor Session: Layout Demonstration
Transistor Revolution
Transistor Bardeen (Bell Labs) in 1947Transistor –Bardeen (Bell Labs) in 1947
Bipolar transistor – Schockley in 1949
First bipolar digital logic gate – Harris in 1956
First monolithic IC – Jack Kilby in 1959First monolithic IC – Jack Kilby in 1959
First commercial IC logic gates – Fairchild 1960
TTL – 1962 into the 1990’s
ECL – 1974 into the 1980’sECL 1974 into the 1980 s
CSE477 L01 Introduction.10 Irwin&Vijay, PSU, 2002
MOSFET Technology
MOSFET transistor - Lilienfeld (Canada) in 1925 and Heil (England) in 1935
CMOS – 1960’s, but plagued with manufacturing problems
PMOS in 1960’s (calculators)
NMOS i 1970’ (4004 8080) f dNMOS in 1970’s (4004, 8080) – for speed
CMOS in 1980’s – preferred MOSFET technology because of power benefits
BiCMOS, Gallium-Arsenide, Silicon-Germanium
SOI, Copper-Low K, …
CSE477 L01 Introduction.11 Irwin&Vijay, PSU, 2002
Moore’s Law
In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double
(every 18 to 14 months (i.e., grow exponentially with time).
Amazingly visionary – million transistor/chip barrier was crossed in the 1980’s.
2300 transistors 1 MHz clock (Intel 4004) 19712300 transistors, 1 MHz clock (Intel 4004) - 197116 Million transistors (Ultra Sparc III)42 Million 2 GHz clock (Intel P4) - 200142 Million, 2 GHz clock (Intel P4) 2001140 Million transistor (HP PA-8500)
CSE477 L01 Introduction.12 Irwin&Vijay, PSU, 2002
Intel 4004 Microprocessor
CSE477 L01 Introduction.13 Irwin&Vijay, PSU, 2002
Intel Pentium (IV) Microprocessor
CSE477 L01 Introduction.14 Irwin&Vijay, PSU, 2002
State-of-the Art: Lead Microprocessors
CSE477 L01 Introduction.15 Irwin&Vijay, PSU, 2002
Moore’s Law in Microprocessors
Transistors on lead microprocessors double every 2 years
100
1000
2X growth in 1.96 years!
P ti ®P6
10
(MT)
286386
486Pentium® proc
0 1
1
nsis
tors
80088080
8085 8086286
0.01
0.1
Tran
40048008
0.001
1970 1980 1990 2000 2010
CSE477 L01 Introduction.16 Irwin&Vijay, PSU, 2002
1970 1980 1990 2000 2010Year
Courtesy, Intel
Evolution in DRAM Chip Capacityh
64,000,000100000000
human memoryhuman DNA
4X h 3 !
1 000 000
4,000,000
16,000,000
1000000
10000000p
0.1 μm
0.07 μm4X growth every 3 years!
64,000
256,000
1,000,000
100000
1000000
city
/chi
0 35 0 4 μm
0.18-0.25 μm
0.13 μm
book
4,000
16,00010000
it ca
pac
0.7-0.8 μm
0.5-0.6 μm
0.35-0.4 μm
encyclopedia2 h s CD dio
64
256
1,000
100
1000
Kbi
1.6-2.4 μm
1.0-1.2 μm
μ2 hrs CD audio
30 sec HDTV
64
101980 1983 1986 1989 1992 1995 1998 2001 2004 2007 2010
page
CSE477 L01 Introduction.17 Irwin&Vijay, PSU, 2002
Year
Die Size Growth
100
Die size grows by 14% to satisfy Moore’s Law
100
Pentium ® procP6m
m)
8080 8086286
386486 Pentium ® proc
10
ie s
ize
(m
7% th
40048008
8085Di ~7% growth per year
~2X growth in 10 years
1
1970 1980 1990 2000 2010
CSE477 L01 Introduction.18 Irwin&Vijay, PSU, 2002
1970 1980 1990 2000 2010Year
Courtesy, Intel
Clock Frequency
Lead microprocessors frequency doubles every 2 years
10000
1000
10000
2X every 2 years
P6Pentium ® proc
100
1000
(Mhz
)
2X every 2 years
Pentium ® proc486
3862868086808510
quen
cy (
8086
80808008
1
Freq
800840040.1
1970 1980 1990 2000 2010
CSE477 L01 Introduction.19 Irwin&Vijay, PSU, 2002
YearCourtesy, Intel
Power Dissipation
100
Lead Microprocessors power continues to increase
P6Pentium ® proc
100
Pentium ® proc
486386
2868086
10
r (W
atts
)
3868085
808080084004
1Pow
er
4004
0.11971 1974 1978 1985 1992 2000
Year
P d li d di i ti ill b hibiti
CSE477 L01 Introduction.20 Irwin&Vijay, PSU, 2002Courtesy, Intel
Power delivery and dissipation will be prohibitive
Power Density
10000Rocket
1000(W
/cm
2)
Nuclear
Nozzle
100
Den
sity
( NuclearReactor
40048008 8085
8086
286 386 Pentium® procP610
Pow
er D
Hot Plate
8080 286 386486
p
11970 1980 1990 2000 20101970 1980 1990 2000 2010
Year
Power density too high to keep junctions at low temp
CSE477 L01 Introduction.21 Irwin&Vijay, PSU, 2002
Power density too high to keep junctions at low temp
Courtesy, Intel
Design Productivity Trends
Logic Tr./Chip
10,000
1,000M)
10,000
100,000
Tr./Staff Month.
58%/Yr compounded
1,000
100
10per C
hip
(M
100
1,000
10,000
vity
aff -
Mo.
exity
58%/Yr. compoundedComplexity growth rate
10
1
Tran
sist
or p
10
100
Prod
uctiv
Tran
s./S
ta
Com
ple
xxx
xxx
x
21%/Yr. compoundProductivity growth rate
x0.1
0.01Logi
c T
0.1
1 (K)
003
981
983
985
987
989
991
993
995
997
999
001
005
007
009
0.001 0.01
2019 19 19 19 19 19 19 19 19 19 20 20 20 20
Complexity outpaces design productivity
CSE477 L01 Introduction.22 Irwin&Vijay, PSU, 2002Courtesy, ITRS Roadmap
Co p e ty outpaces des g p oduct ty
Technology Directions: SIA Roadmap
Year 1999 2002 2005 2008 2011 2014Feature size (nm) 180 130 100 70 50 35Feature size (nm) 180 130 100 70 50 35Mtrans/cm2 7 14-26 47 115 284 701Chip size (mm2) 170 170-214 235 269 308 354Signal pins/chip 768 1024 1024 1280 1408 1472Clock rate (MHz) 600 800 1100 1400 1800 2200Wiring levels 6-7 7-8 8-9 9 9-10 10Wiring levels 6 7 7 8 8 9 9 9 10 10Power supply (V) 1.8 1.5 1.2 0.9 0.6 0.6High-perf power (W) 90 130 160 170 174 183Battery power (W) 1.4 2.0 2.4 2.0 2.2 2.4
For Cost-Performance MPU (L1 on-chip SRAM cache; 32KB/1999 ( p ;doubling every two years)
http://www itrs net/ntrs/publntrs nsf
CSE477 L01 Introduction.23 Irwin&Vijay, PSU, 2002
http://www.itrs.net/ntrs/publntrs.nsf
Why Scaling?
Technology shrinks by ~0.7 per generation
With every generation can integrate 2x more functions on a chip; chip cost does not increase significantly
Cost of a function decreases by 2x
B tBut …How to design chips with more and more functions?Design engineering population does not double every two yearsDesign engineering population does not double every two years…
Hence, a need for more efficient design methodsExploit different levels of abstraction
CSE477 L01 Introduction.24 Irwin&Vijay, PSU, 2002
Design Abstraction Levels
SYSTEM
MODULE
GATE
MODULE
+
GATE
CIRCUITCIRCUIT
VoutVin VoutVin
DEVICEG
n+S D
n+
CSE477 L01 Introduction.25 Irwin&Vijay, PSU, 2002
Major Design ChallengesMicroscopic issues
ultra-high speedsdi i ti d
Macroscopic issuestime-to-marketd i l itpower dissipation and
supply rail dropgrowing importance of interconnect
design complexity (millions of gates)high levels of abstractionsinterconnect
noise, crosstalkreliability,
f t bilit
abstractionsreuse and IP, portabilitysystems on a chip (SoC)
manufacturabilityclock distribution
tool interoperability
Year Tech. Complexity Frequency 3 Yr. Design Staff Size
Staff Costs
1997 0 35 13 M Tr 400 MHz 210 $90 M1997 0.35 13 M Tr. 400 MHz 210 $90 M1998 0.25 20 M Tr. 500 MHz 270 $120 M1999 0.18 32 M Tr. 600 MHz 360 $160 M
CSE477 L01 Introduction.26 Irwin&Vijay, PSU, 2002
2002 0.13 130 M Tr. 800 MHz 800 $360 M
Assignment
Reading Assignment 1.3
CSE477 L01 Introduction.27 Irwin&Vijay, PSU, 2002