fabrication of nanoscale blm biosensors tadahiro kaburaki (cornell) mr burnham (wadsworth postdoc)...

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Fabrication of Nanoscale BLM Biosensors Tadahiro Kaburaki (Cornell) MR Burnham (Wadsworth Postdoc) M.G. Spencer (Cornell PI) James Turner (Wadsworth PI) Xinquin Jiang (Cornell)

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Fabrication of Nanoscale BLM Biosensors

Tadahiro Kaburaki (Cornell)MR Burnham (Wadsworth Postdoc)

M.G. Spencer (Cornell PI)James Turner (Wadsworth PI)

Xinquin Jiang (Cornell)

Presentation Contents

• Objectives• Background• Fabricated devices• Signal Processing• Current Goals

Objectives

• Fabrication of a stable platform for transducing signals through artificial BLMs– Allow for the most stable BLM possible

• Analysis of BLM impedance characteristics– Including signals produced with proteins

• Packaging of a sensor with analytic capabilities on-chip

BLMs

• Composed of a hydrophilic polar head and hydrophobic non polar tail

• 5nm thickness with .5nm2 area / lipid molecule• BLM’s have high resistances and high capacitances

An Artist's conception of ion channels in a lipid bilayer membrane (taken from Hille, B., 1992. Ionic Channels of Excitable Membranes. Sinauer, Sunderland, Massachusetts.)

Bilayer Lipid Membranes

Why use a BLM/protein system?

• Biosensors based on natural receptors (proteins) with BLMs provide a sensitive and selective method of sensing chemical species (ions or molecules)

• Upon binding with analytes, transport proteins change their transport behavior across BLMs

• These types of sensors are unique in that they have molecular recognition as well as signal tranduction properties.

Electrochemical Impedance Spectroscopy (EIS)

• A small amplitude sinusoidal voltage is applied across the device

• The frequency dependant impedance is measured as a magnitude and phase angle

device

electrodes

Electrochemical Impedance Spectroscopy (EIS)

Electrochemical Impedance Spectroscopy (EIS)

Electrochemical Impedance Spectroscopy (EIS)

• Every circuit element has a transfer function• Transfer functions are used to derive the resistance and

capacitance of the system

Component Current Vs.Voltage

Impedance

resistor E= IR Z = R

inductor E = L di/dt Z = jwL

capacitor I = C dE/dt Z = 1/jwC

Electrochemical Impedance Spectroscopy (EIS)

• The most basic circuit model utilized is

Zel

• This circuit has a function of

ZelZmZt

RjwC

RZm

jwCRZm

1

11

Electrochemical Impedance Spectroscopy (EIS)

• Assuming some knowledge of the circuit structure, a transfer function can be derived and the circuit parameters can be extracted.

Electrochemical Impedance Spectroscopy (EIS)

• Unfortunately, these systems can be far more complicated due to a variety of other parasitic interactions– A primary source of these complications is the Si

substrate itself which is highly conductive. This presents a low conductance, high capacitance pathway when combined with the membrane.

Electrochemical Impedance Spectroscopy (EIS)

Fabrication Requirements

• Hold a stable membrane– Smooth and clean surface

• Preferably oxide surface

– Porous surface• Allow for signals to be passed through

membrane/proteins

• Pore size should be small to increase the stability of suspended region and prevent lipids from forming conformally to the surface

Fabrication Requirements

• Measure signals with a high S/N ratio– Need a high resistance, low capacitance substrate

• Prevents capacitive coupling, capacitive signal leakage

• High resistance allows for signals to be measured only through the membrane area

– Good electrode placement• i.e. Ag/AgCl electrodes for Cl- measurement

Porous alumina substrates

• Designed by Xinquin Jiang (Spencer group)– Utilizes porous alumina formed

Porous Alumina Substrate Fabrication

• Use LPCVD (Low Pressure Chemical Vapor Deposition) to coat a 4” DSP (Double sided polish) wafer with Silicon Nitride

Si3N4

Si

Porous Alumina Substrate Fabrication

• Etch a 180 micron x 180 micron square window on the backside of the substrate

Porous Alumina Substrate Fabrication

• Use KOH as a wet etchant to etch through the Si substrate– KOH preferentially etches <100> crystal plane, resulting in a “V-

groove”

Porous Alumina Substrate Fabrication

• Evaporate a thin layer of Al onto the front side of the substrate

Al

Porous Alumina Substrate Fabrication

• Anodize the aluminum– Al(metal) Al2O3

Porous Alumina Substrate Fabrication

• Etch the backside to remove the Si2N3

Porous Alumina Substrate Fabrication

• Alumina film characteristics can be adjusted by use of phosphoric acid and

anodization conditions

Porous Alumina Substrate Fabrication

• BLM can then be deposited

Signals obtained from this system

• Our results are comparable to state of the art systems

• The results do require some amount of interpretation– This is because the systems on which the BLMs

reside are not identical.

• Si substrates have a much lower resistance and higher capacitance than quartz substrates

Sample AREA Impedance

0.1 Hz 1 Hz 10 Hz

Quartz plus oxide 88 mm2 46.25 GΩ 14.02 GΩ 1.67 GΩ

Silicon, N-type

0.005-0.02 Ω-cm

88 mm2 1.51 MΩ 173 kΩ 21.32 kΩ

Silicon plus oxide 88 mm2 559.6 MΩ 53.58 MΩ 5.66 MΩ

Silicon/Nitride/Alumina (no H2PO4

etching)

88 mm2 25.21 MΩ 4.197 MΩ 494 kΩ

Silicon/Nitride/Alumina (no H2PO4

etching)

12.6 mm2 18.91 MΩ 3.85 MΩ 503 kΩ

Silicon/Nitride/Alumina (H2PO4 etch 20 min)

88 mm2 1.63 MΩ 133 kΩ 25.02 kΩ

Silicon/Nitride/Alumina (H2PO4 etch 20 min)

12.6 mm2 3.26 MΩ 488.5 kΩ 72.32 kΩ

Proposed Structure

• Change of Silicon substrate for SiO2

• Difficulty in etching through the wafer– HF wet etch is isotropic

– Dry etching of SiO2 has a maximum rate of 100nm/minute which is 5000 minutes for a 500um wafer.

Proposed Structure

• Cut 100um diameter holes in a quartz substrate with a micromachining laser

Quartz

Proposed Structure

• Cut 100um diameter holes in a quartz substrate with a micromachining laser

Proposed Structure

• Anodize the aluminum– Al(metal) Al2O3

Proposed Structure

• Coat the surface with a polymer (polyimide or adhesive wax)

Proposed Structure

• Adhere the Si and quartz surfaces (hot press)

Proposed Structure

• Dry etch the Si wafer (Bosch etch process) at a rate of 1um/minute. Dry etch polymer (RIE)

Proposed Structure

• BLM can then be deposited

The Next Step

• Addition of proteins– The proteins are the mechanism by which the

environment is actually measured– Measurements will be made at a single frequency

that is chosen to maximize sampling while remaining in the resistive regime

– Optimally this frequency will be in the kHz range

• Hirano from Nihon University used a patch clamp to measure current openings from a single gramicidin protein in response to different concentrations of ferritin avidin

• Opening percentage vs. FA concentration

Conclusion

• We have developed a system to hold membranes at a high resistance over a patterned substrate

• Current readings are feasible and should generate readable results due to the larger number of measurement proteins

Wadsworth Center (State of NY)