laser diodes - mouser electronics€¦ · 780nm high-speed response lasers rohm’s 780nm (red)...

Optoelectronics 2007-Oct.2007-Oct.

-Laser Diodes

Laser DiodesLaser Diodes

Catalog No.50P5817E 10.2007 ROHM © TSU

1st. Oct. 2007.

Product Catalog

www.rohm.com

■ Safety

■ Packaging Specifications (Unit : mm)

DIRECT EXPOSURE TO BEAMINVISIBLE LASER RADIATION-AVOID

MAXIMUM OUTPUTWAVELENGTH

b LASER PRODUCTCLASS

Part 1040.10 and 1040.11This product complies with 21 CFR

615, Japan.

ROHM CO.,LTD.21.Saiin Mizosaki-cho. Ukyo-ku Kyoto

mWnm

Laser Diode

from this aperture

AVOID EXPOSURE-lnvisibleLaser radiation is emitted

SEMICONDUCTOR LASERINVISIBLEThe light emitted from laser diodes, while almost invisible to the human

eye, can cause retinal damage if viewed directly. Never look directly into the laser beam or through any lenses or fibers when the system is operating.

For optical axis alignment or other operations, we recommend the use of an infrared-sensitive camera (ITV) or wearing protective goggles.

The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical instruments. transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

Explanation labelSafety standard(JIS C6802)

Tray Box

Productpackage

High radiation

frame

W

156 163 7

L H

(High radiation frame)

7

156

163

118

16

Antistatic laminatevacuum bag

75


Tray

120

Box

96

86Productpackage

�5.6

W

86 118 16

L H

(Other)

Quantity per unit(pcs/tray)Case

Vacuum packItem packaging

Tray

Packaging style

200 1000

Basic ordering unit(pcs)

240

Weight［g］



Tray

Packaging style

100 500


250

Weight［g］

170

27

160(Unit : mm)

(Unit : mm)

(Unit：mm) (Unit：mm)

1 2

ROHM Laser DiodesROHM, among the leading laser diode manufacturers, offers a wide lineup of high-reliability laser diodes, from low-output to high-output types, using the most advanced device technologies.

●660nm high-output lasers

ROHM’s 660nm band (red) high-output semiconductor lasers provide stable optical output characteristics and high breakdown resistance using our proprietary element construction.In addition, a thin package improves applicability in compact devices.

P.8, 9

●780nm low-output lasers

ROHM’s 780nm (infrared) low-output laser diodes feature high reliability and are available in a range of outputs, ensuring compatibility with a variety of applications. 660nm (red) dual-wavelength products are currently being developed.

P.13

●780nm high-speed response lasers

ROHM’s 780nm (red) high-speed response laser diodes are widely used primarily as light sources for laser printers. They are also ideal for use as a general laser light source in sensor applications.

P.14

●780nm high-output lasers

ROHM’s 780nm (infrared) high-output laser diodes utilize a novel active layer design for high breakdown resistance. In addition, efficient management of each lot is ensured by thorough quality control.

P.12

●660nm low-output lasers

ROHM’s 660nm band (red) low-output laser diodes command a large market share – a testament to their high reliability.The wide range of outputs can respond to a variety of needs. Dual-wavelength products in the 780nm band (infrared) are currently under development. P.10, 11

●660nm high-speed response lasers

ROHM’s 660nm band (red) high-speed responselaser diodes feature both low power consumptionand high-speed response by optimizing element construction.

P.7

New series

3

What is a laser diode?What is a laser diode?

Overview of laser diodes

Laser Diode Features and ApplicationsSample applications that use features of lasers (light whose wavelength and phase are in phase) are shown below. Additional uses, such as projector light sources and heating of minute areas, are also possible.

Expanding into a variety of applications

High speed, low noise

Optical Communications

Long distance, high speed, electrically insulated

Wireless Communication

High speed, low noise

DVD Readers

Foreign particles, dust Minutedetection over long distances

Dusts

Optical Sensors

Can check read position

Bar Code Readers

High speed, high precision

Laser Printers

Detailed, high precision

Position Markers

High accuracy visible spot

Meters

高速反応・高精度

Optical Mice

High precision, high-speed response

Laser Microscopes

Highly precise spot focus

Laser Pointers

ON

Allows accurate pointing via pin spot illuminationEnables high-speed reading of minute signals with micron spots

High-speed modulation is possible, making it possible to transmit large amounts of information

Attenuation over distance is low, allowing for far transmission

(1)

(2)

(3)

(4)

(5)

Illumination

Reading

Measurements

Communications

Sensors

Characteristics Function Application ExamplesLaser microscopes, laser scalpels, pointing markers, and the like.Optical disk reading/writing (CDs, DVDs)Road distance / building height measurements, for example.Optical communications in PCs, mobile phones, and other equipment.Sensor devices such as fire alarms, dust control, and laser mice.

Interference fringes are easily created, enabling detection of minute changes

Height adjustable, highly detailed

●What is a laser?　This is actually an acronym for “Light Amplification by Stimulated Emission of Radiation.” Basically, this means increasing the amplitude of light by induced emission.

● The difference between laser diodes and light emitting diodes (LEDs) Both laser diodes and LEDs are formed through the creation of a PN semiconductor junction. When an electrical current is supplied a positive hole, which has a positive charge, and an electron, which has a negative charge, bond, emitting light.

Since an LED produces natural light, the wavelength and phase are not uniform. A laser diode, on the other hand, operates by induced emission, meaning that the wavelength and phase of the light are uniform. Its particular characteristics are based on the underlying theory that the amplitude of light can increased as it travels back and forth within a resonator, making it possible to obtain large optical outputs. Therefore, a laser diode, in contrast with an LED, generates coherent or ‘arrayed’ light using a lens, which can be sent long distances or focused on an extremely small point. In addition, faster operation is possible compared with LEDs, enabling widespread use in more disparate fields. (For application examples, see below)

Laser Diode

Light Emitting Diode

･ Linear light emission・Monochrome light

・ Light is dispersed.・Mixed colors

Structural Diagram

Travels back and forth between reflecting mirrors,increasing amplitude

4

5mW

Infrared780nm CD

Playback

DVD / CD Playback

CD Recording CD Recording

Models currentlyunder development

Laser PrinterHigh-speedLaser Printer

Red / infrared dualwavelength650nm780nm

Red650nm

Blue-violet400nm

10mW 20mW 200mW 300mW 400mW

DVD / CDHigh-speedRecording

DVDHigh-speedRecording

DVDRecording

Next GenerationDVD Recording

Next GenerationDVD Playback

DVD PlaybackLaserPointer

DVD Playback/CD Recording

DVD Recording/ CD Playback

Low Output Medium Output High Output Ultra-high Output

CD-R

REWRITABLE CD-R

Application Map

660nm High Speed Lasers

Class

660nm Low Power Lasers(660nm / 780nm Dual Wave Low Power Lasers)

780nm High Power Lasers


Others

780nm Low Power Lasers

660nm High Power Lasers(660nm / 780nm Dual Wave High Power Lasers)

Category SubcategoryOptical DiskPart Number Printer OtherHD DVD

/ BDDVD W DVD P

/ ROMCOMB DVD

RecCD P/ROM

HighSpeed

MediumSpeed

Multi Generaluse

PPCBar

CodeScanner

Sensor OpticalSensor

High HeatDissipation

SlimCompatibility

Laser Diodes : Lineup by ApplicationLaser Diodes : Lineup by Application

RLD65NZB1RLD65PGB7RLD2WMGU1RLD2WMGS1RLD65MPT4RLD65MPT7RLD2WMUV2RLD2WMFV2RLD2WMFL1RLD2WMNL2RLD2WMUS3RLD78PPY4RLD78PPY6RLD2WMGZ4RLD78MPA1RLD78MRA1RLD78NZH1RLD78NZH2RLD78NZM1RLD65MPT3-13ARLD78MZGM

●○

●

○

●●

●●

●●●●●●○

●●

●●●

●

○○

○○

●●

●

●

○

○○○●●

●

●●●

●●

●

●●

●

●●●

●

●

●●

●

●

●●

●●●

☆

☆☆☆

☆

☆☆☆

● : Recommended Products○ : Compatible Products

☆ : Under Development

5

Laser Diodes LineupLaser Diodes Lineup

High radiation frame



RLD2WMGU1

RLD65PGB7

RLD2WMGS1

662

782

658

662

782

(V)VR

2

2

2

2

2

ToprMax.(°C)

75

75

75

75

75

(mA)ITH

60

50

75

60

55

Iop(mA)

150

160

215

150

65

Vop(V)

2.7

1.9

3.2

2.7

1.9

θ//(deg)

9.5

7.5

9.0

9.5

8.5

(deg)θ

17.0

15.5

16.0

17.0

15.5

80

90

120

80

10

(mA)Im

-

-

-

-

-

300

(mW)Po

350

300

240

10

650nm　LD

(1)(2)

780nm　LD

(3)

LD

(2)(3)(1)

RLD65MPT4φ5.6mm

(Open packaging spec②)

φ5.6mm(Open packaging spec②)

RLD65MPT7

φ5.6mm(Open twin type)


RLD2WMUV2

φ5.6mm(4 Leads type)

4PIN frame

RLD2WMFV2

RLD2WMFL1

RLD2WMNL2

RLD2WMUS3

655

655

655

785

655

785

655

785

7

(mW)Po

10

7

7

7

7

7

7

(V)VR

2

2

2

2

2

2

2

2

ToprMax.(°C)

70

70

70

70

70

70

75

75

(mA)ITH

30

20

20

18

20

18

10

10

Iop(mA)

40

30

28

30

28

30

17

15

Vop(V)

2.3

2.3

2.3

1.9

2.3

1.9

2.3

1.9

(mA)Im

0.15

0.15

0.14

0.25

0.14

0.25

0.12

0.15

θ//(deg)

8

8

8

10

8

10

27

32

7

5

5

5

5

5

5

5

(deg)θ

27

27

27

32

27

32

10

10

655

785

662

785

7

7

20

20

2

2

2

2

85

85

70

70

30

25

22

22

45

45

40

45

2.0

1.8

2.3

1.8

0.12

0.22

0.2

0.25

8

10

10

10

5

5

15

15

27

32

20

17

(3)

LD

PD

(1)(2)

φ5.6mmNote) Unless otherwise specified, the electrical and optical characteristics are typical values.

RLD65NZB1 658

(mW)Po

10

(V)VR

2

ToprMax.(°C)

60

(mA)ITH

15

Iop(mA)

25

Vop(V)

2.2

θ//(deg)

9

(deg)θ

20 6

(mA)Im

0.4 (3)

LD

PD

(1)

(2)

P.7

P.8, 9

P.10, 11

4PIN frame

(4)

650nmLD

PD

(1)

(2)780nmLD

(3)

(4)

650nmLD

PD

(1)

(2)780nmLD

(3)

(2)

650nmLD

780nmLD

PD

(1)(4)(3)

660nm Low Power Lasers (660nm / 780nm Dual Low Power Lasers)

660nm High Power Lasers (660nm / 780nm Dual Wave High Power Lasers)


Equivalent circuitPackagePart No.

Absolute maximum ratings(Tc=25°C) Electrical and characteristics(Tc=25°C)

λp(nm)

WavelengthPo

(mW)



λp(nm)

WavelengthPo

(mW)



λp(nm)

WavelengthPo

(mW)

: Under development Note) Unless otherwise specified, the electrical and optical characteristics are typical values.


(Pulse)

(Pulse)

(Pulse)

6

φ5.6mm

φ5.6mm

(mW)Po

(V)VR Topr

　Max.(°C) (mA)

ITH Iop(mA)

Vop(V) (mA)

Im θ//(deg)(deg)

θ

(3)

LD

PD

(1)

(2)

(3)

LD

PD

(1)

(2)

φ5.6mm(Open package spec①)

φ5.6mm(Compatible frame)

λp(nm)

Wavelength

(mW)Po

(V)VR Topr

Max.(°C) (mA)

ITH Iop(mA)

Vop(V)

θ//(deg)(deg)

θ(mA)Im

(3)

LD

PD

(1)

(2)

φ5.6mm

φ5.6mm

φ5.6mm

(mW)Po

(V)VR Topr

　Max.(°C) (mA)

ITH Iop(mA)

Vop(V) (mA)

Im θ//(deg)(deg)

θ

LD

(3)

PD

(1)

(2)

High radiation frame(1)

(2)

780nm LD

650nm LD(3)

�5.6mm(Open package spec②)

(V)VR Topr

Max.��C) (mA)

ITH Iop(mA)

Vop(V)

θ//(deg)(deg)

θ(mA)Im

(mW)Po

(Pulse)

(Pulse)

(Pulse)

LD

(3)(1)(2)

P.12

P.13

P.14


Others






λp(nm)

WavelengthPo

(mW)



λp(nm)

WavelengthPo

(mW)



λp(nm)

WavelengthPo

(mW)



Po(mW)

6

φ5.6mm

φ5.6mm

RLD65MPT3-13A

RLD78MZGM

655

785

(mW)Po

5

5

(V)VR

2

2

Topr　Max.(°C)

40

60

(mA)ITH

30

35

Iop(mA)

40

45

Vop(V)

2.3

1.9

(mA)Im

0.2

0.2

θ//(deg)

8

11

5

3

(deg)θ

27

37

(3)

LD

PD

(1)

(2)

(3)

LD

PD

(1)

(2)


RLD78MPA1


RLD78MRA1

λp(nm)

Wavelength

785

785

(mW)Po

5

4.5

(V)VR

2

2

ToprMax.(°C)

70

70

(mA)ITH

35

35

Iop(mA)

45

45

Vop(V)

1.9

1.9

θ//(deg)

11

11

(deg)θ

37

37

3

3

(mA)Im

0.15

0.15

(3)

LD

PD

(1)

(2)

φ5.6mm

φ5.6mm

φ5.6mm

RLD78NZH2

RLD78NZH1

785

785

(mW)Po

10

5

(V)VR

2

2

Topr　Max.(°C)

60

60

(mA)ITH

20

20

Iop(mA)

35

27

Vop(V)

1.9

1.9

(mA)Im

0.35

0.35

θ//(deg)

11

11

6

3

(deg)θ

28

28

LD

(3)

PD

(1)

(2)

RLD78NZM1 785 10 2 60 10 20 1.9 1.0 9 628


RLD2WMGZ4(1)

(2)

780nm LD

650nm LD(3)

RLD78PPY6�5.6mm

(Open package spec②)

RLD78PPY4

785

785

(V)VR

2

2

ToprMax.��C)

75

75

(mA)ITH

35

35

Iop(mA)

160

130

Vop(V)

2.1

2.0

θ//(deg)

8.0

8.0

(deg)θ

16.5

16.5

120

90

(mA)Im

�

�

655

782

2

2

75

75

25

35

30

130

2.3

1.9

10.5

8.0

24.0

16.5

5

90

�

�

10

240

(mW)Po

280

240(Pulse)

(Pulse)

(Pulse)

LD

(3)(1)(2)

P.12

P.13

P.14


Others






λp(nm)

WavelengthPo

(mW)



λp(nm)

WavelengthPo

(mW)



λp(nm)

WavelengthPo

(mW)



Po(mW)



Note) Unless otherwise specified, the electrical and optical characteristics are typical values.


7

10

8

6

4

2

00 10 20 30 40 50

RL-D65MZT2 (ROHM Conventional Product))RLD65NZB1Optical Output (mW)

Operating Current (mA)

Reduced30%!

660nm High Speed Lasers660nm High Speed LasersRLD65NZB1RLD65NZB1

Low power consumption

Low Droop Characteristics

Lineup

Dimensions

φ5.6mmNote) Unless otherwise specified, the electrical and optical characteristics are typical values.

RLD65NZB1 658

(mW)Po

10

(V)VR

2

ToprMax.(°C)

60

(mA)ITH

15

Iop(mA)

25

Vop(V)

2.2

θ//(deg)

9

(deg)θ

20 6

(mA)Im

0.4 (3)

LD

PD

(1)

(2)



λp(nm)

WavelengthPo

(mW)

Feature Summary Applications・ Laser printers・Optical disk reading・Laser pointers, sensors・Bar code readers・Laser microscopes, position sensors・Distance sensors, optical mice, and the like.

・ Low power consumption・Low droop characteristics・PIN photo diode built in

Single-mode red laser diode utilizing proprietaryconstruction for low power consumption.

The world’s smallest operation current 　 30% less than conventional products contributes to increased energy savings.

A droop of 10% or less (1mW output, Tc = 25°C) is possible due to proprietary construction. 　Output drop caused by self-generated heat is low, and the electrical characteristics are stable throughout a wide temperature range.

90°±2°

φ3.

6

φ1.

0min

.0.4±0.1

1.0 ±

0.1 φ

4.4+

0

(3)

(1)

(2)

1.2 ±

0.1

6.5 ±

0.5

2.3 ±

0.5

Opt

ical d

istan

ce1.

35±0

.1

3-φ0.45

+0-0.025φ5.6

Laser chip

Cover glass

● φ5.6mmTOP VIEW

Current Consumption27mA(10mW output, Tc = 25°C)

NEW

(Unit: mm)

�

��Oct. 2007 ROHM study.

Competitor B

Competitor A

8

・High light separation precision (Actual performance: ±0.2 µm; mask precision level)　　　　　Provides stable output with little variation in characteristics.

Thin, high heat dissipation frame

Stable optical output characteristics (Dual Wave High Power Lasers)

・ DVD recording・CD recording・Compact, thin devices・Optical pickups

・Thin, high heat dissipation package・Stable optical output characteristics

Stable optical output and high breakdownresistance using proprietary elementconstruction. Thin package ideal for compact devices.

The thin, high heat dissipation frame efficiently dissipates heat close to the laser element – the actual source of heat.

Maintaining a precise distance between light-emitting points is an important requirement for dual-wavelength lasers. ROHM have adopted a proprietary manufacturing flow, resulting in stable optical output far field patterns with little deformation.

・The optical output strength distribution (far field pattern) is distributed stably on the left and right of the central axis due to proprietary element design (light containment construction).　　　　　　Contributes to stabilization of optical characteristics　　　　　　in sets.

CompetitorProduct

ROHM

Stripe Formation Steps Features

・Light origin precision dependent on mask alignment.・Easy to simplify process.

・High light origin precision (Variations between wafers and lots do not occur)

Formed separately

Formed simultaneously

Formed separately

Large variation in light origin

・Palladium plating for the pins is highly resistant to sulphurization, preventing atmospheric discoloration.

・Flat bottom surface design results in a wide surface area that facilitates heat dissipation.

(Conventional Product) High Heat Dissipation ProductThe wide flat surface area improves heat dissipation

Relat

ive Em

itted L

ight S

treng

th

Angle (deg)-30 -20 -10 0 10 20 30

FFP (Far Field Pattern) Characteristics

660nm High Power Lasers660nm High Power Lasers660nm / 780nm Dual Wave High Power Lasers

Feature Summary Applications

9

660nm High Power Lasers660nm High Power Lasers660nm / 780nm Dual Wave High Power Lasers

Lineup

Dimensions

● High radiation frameTOP VIEW

1.6

0.4

0.7

2-R0.5

0.235（Emitting point:Y）

5.153.6

2.752.10.

450.8

3.0

1.3

3-0.4

0.45（Emitting point:Z）

0.853.41.5

1.45

1.0

5.0

(1)(1) (2) (3)(3)(3)

Tolerance is ±0.1, unless otherwise specified. (Unit : mm)




RLD2WMGU1

RLD65PGB7

RLD2WMGS1

662

782

658

662

782

(V)VR

2

2

2

2

2

ToprMax.(°C)

75

75

75

75

75

(mA)ITH

60

50

75

60

55

Iop(mA)

150

160

215

150

65

Vop(V)

2.7

1.9

3.2

2.7

1.9

θ//(deg)

9.5

7.5

9.0

9.5

8.5

(deg)θ

17.0

15.5

16.0

17.0

15.5

80

90

120

80

10

(mA)Im

-

-

-

-

-

300

(mW)Po

350

300

240

10

650nm　LD

(1)(2)

780nm　LD

(3)

LD

(2)(3)(1)



λp(nm)

WavelengthPo

(mW)


(Pulse)

(Pulse)

(Pulse)

10

660nm Low Power Lasers660nm Low Power Lasers

Low operating current (High temperature operation characteristics)

660nm / 780nm Dual Low Power Lasers

Low noise

・DVD players・DVD-ROM・Component drives・Bar code readers・Sensors and more

・Low output red・Industry standard diameter (5.6)・Glass-less cap

Market proven high reliability. The lineup isavailable in a wide range of outputs for broadcompatibility. 780nm (infrared) dual-wavelengthproducts are currently under development.

Rohm’s unique die designing enabled LD’s stable drive at high temperature range and high breakdown voltage level!

Matching with original high frequency modulation IC reduces noise.

High FrequencyModulation ICBU9369FVM

DVD I-L characteristics

Thermal over-drive test COD test

Low Iop by reduction of absorption-loss ESD test Improvement of ESD resistance at DVD side

0%

10%

20%

30%

40%

50%

60%

0 10 20 30 40 50 60 70 80 90 100

Freq

uenc

y

ESD (V) EIAJ (200pF, 0Ω)　machine modelJudgement : 10mA raise above the initial value

An introduction of “Actual Refractive Index WaveguideStructure” succeeded to reduce the operation current

below the conventional threshold level.

ESD-resistance level’s drop, which is trade-off oflow-current operation, is solved by the new die structure

enhancing ESD-resistance level 2 times higher.

0%

20%

40%

60%

80%

100%

10 15 20 25 30 35 40 45 50 55 60

Pcod(mW)

Freq

uenc

y

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

0 2 4 6 8 10 12 14 16 18 20 42 44 46 48 5032 34 36 38 40 52 54 56 58 6022 24 26 22 30

Meas. conditions : 5mW(CW) APCLD type : 4-pin frameNo heat sinkWind : NoConstant Temperature Bath : ESPE STH-120

Iop5

(mA)

50℃ set 55℃ set 60℃ sset

Time (min) / Fixed temperature on Constant Temperature Bath65℃ set 70℃ set 75℃ set

New products

New products

New products

Conventionalproducts



New productsConventionalproducts

0

1

2

3

4

5

6

7

0 10 20 4030 50 60 70 80

RLD2WMFL1DVD I-L characteristics（Tc=90℃）

Opt

ical

out

put(m

W)

Current(mA) Voltage(V)

Operation output

24％ Down


11

660nm Low Power Lasers660nm Low Power Lasers660nm / 780nm Dual Low Power Lasers

Lineup

Dimensions90°±2°

�3.6

�1.0

min

.0.4±0.1

1.0 ±

0.1 �4

.4�0

(3)

(1)

(2)

1.2 ±

0.1

6.5 ±

0.5

2.3 ±

0.5

Opt

ical d

istan

ce1.

35±0

.1

3-�0.45

�0�0.025�5.6

Laser chip

● �5.6mm (Open packaging spec②)TOP VIEW

90°±2°

1.0 ±

0.1

0.4±0.1

�3.6

±0.1

�4.4

max

(4)

(3)

(1)

(2)

Optical distance1.18±0.1

Laser chip �0�0.025�5.6

1.2 ±

0.1

2.3 ±

0.2

0.5m

ax

6.5 ±

0.51.2max

4-�0.45

● �5.6mm (Open twin type)TOP VIEW

(4)

(3)

(1)

(2)

1.2max4-�0.45

● �5.6mm (4 Lead type)TOP VIEW

90°±2°

�3.6

± 0.1�2

.0± 0

.20.4±0.1

5.6

1.0 ±

0.1

2.3 ±

0.2

1.2 ±

0.1

0.5m

ax.

Optical distance1.18±0.08

Sub-mount

Laser chip

Cover glass

�4.4

+06.

5+0.

5

+0-0.025

�1.6�1min

0.5min

(Unit : mm)

● 4PIN frame

5.24.1max

2-R0.5min

2-R0.5min

3.7max

4-0.45max

4-0.351

4 3 2 1

3.8

0.5 0.

7 1.5m

ax0.

22(E

mittin

g Poin

t:Y)

0.61.4

0.4

(Emittin

g Poin

t:Z)

0.6

0.75

2.7

3.05

5

Emitti

ng P

oint:Y

)1.7

5

TOP VIEW

RLD65MPT4φ5.6mm

(Open packaging spec②)

φ5.6mm(Open packaging spec②)

RLD65MPT7



RLD2WMUV2

φ5.6mm(4 Leads type)

4PIN frame

RLD2WMFV2

RLD2WMFL1

RLD2WMNL2

RLD2WMUS3

655

655

655

785

655

785

655

785

7

(mW)Po

10

7

7

7

7

7

7

(V)VR

2

2

2

2

2

2

2

2

ToprMax.(°C)

70

70

70

70

70

70

75

75

(mA)ITH

30

20

20

18

20

18

10

10

Iop(mA)

40

30

28

30

28

30

17

15

Vop(V)

2.3

2.3

2.3

1.9

2.3

1.9

2.3

1.9

(mA)Im

0.15

0.15

0.14

0.25

0.14

0.25

0.12

0.15

θ//(deg)

8

8

8

10

8

10

27

32

7

5

5

5

5

5

5

5

(deg)θ

27

27

27

32

27

32

10

10

655

785

662

785

7

7

20

20

2

2

2

2

85

85

70

70

30

25

22

22

45

45

40

45

2.0

1.8

2.3

1.8

0.12

0.22

0.2

0.25

8

10

10

10

5

5

15

15

27

32

20

17

(3)

LD

PD

(1)(2)

4PIN frame

(4)

650nmLD

PD

(1)

(2)780nmLD

(3)

(4)

650nmLD

PD

(1)

(2)780nmLD

(3)

(2)

650nmLD

780nmLD

PD

(1)(4)(3)



λp(nm)

WavelengthPo

(mW)


12

780nm High Power Lasers780nm High Power Lasers

Low operating current (High temperature operation characteristics)

Lineup

・CD-Rs・Sensors・Combos

・High COD・Low noise design

Optimized active layer design improvesbreakdown resistance.

Optimization of the active layer design reduces the concentration of the optical density distribution inside elements - one of the leading causes of breakdown.　　　As a result, the COD level is improved by approximately　　 20% compared to conventional products

Dimensions

Tolerance is ±0.1, unless otherwise specified.

(2) (3)(1)

● High radiation frameTOP VIEW

1.6

0.4

0.7

2-R0.5

0.2350.2350.2350.2350.235（Emitting point:Y）

5.153.6

2.752.10.

450.8

3.0

1.3

3-0.4

0.45（Emitting point:Z）

0.853.41.5

1.45

1.0

5.0

90°±2°

�3.6

�1.0

min

.0.4±0.1

1.0 ±

0.1 �4

.4�0

(3)

(1)

(2)

1.2 ±

0.1

6.5 ±

0.5

2.3 ±

0.5

Opt

ical d

istan

ce1.

35±0

.1

3-�0.45

�0�0.025�5.6

Laser chip

● �5.6mm (Open packaging spec②)TOP VIEW

Tolerance is ±0.1, unless otherwise specified.(Unit : mm)

Opt

ical

Den

sity

Central Position

New Product

Opt

ical

Out

put 20%UP

Forward Current

Conventional Product

Well Layer

Guide LayerGuide Layer

Clad LayerClad Layer

Ref

ract

ive

Inde

x

Film Thickness

Conventional ProductNew Product



RLD2WMGZ4(1)

(2)

780nm LD

650nm LD(3)

RLD78PPY6�5.6mm

(Open package spec②)

RLD78PPY4

785

785

(V)VR

2

2

ToprMax.��C)

75

75

(mA)ITH

35

35

Iop(mA)

160

130

Vop(V)

2.1

2.0

θ//(deg)

8.0

8.0

(deg)θ

16.5

16.5

120

90

(mA)Im

�

�

655

782

2

2

75

75

25

35

30

130

2.3

1.9

10.5

8.0

24.0

16.5

5

90

�

�

10

240

(mW)Po

280

240(Pulse)

(Pulse)

(Pulse)

LD

(3)(1)(2)


Absolute maximum ratings(Tc=25°C)

λp(nm)

Po(mW)


Electrical and characteristics(Tc=25°C)

13


Lineup

A PPS resin package is used featuring superior dimensional stability and wide interchangeability with conventional 5.6mm industry standard package types.As a result, replacement is simplified. In addition, the palladium plating at the pins reduce discoloration and degradation.

780nm Low Power Lasers780nm Low Power Lasers

Highly compatible φ5.6 mm resin package (RLD78MRA1)

CD-ROMsCD playersSensorsCombos

・Low infrared output・Low noise・Resin package

Excellent market results underline their highreliability. The wide lineup is optimized for avariety of needs.　

Dimensions5.0±0.05

2.4±0.03

13

2 � 4.4

max

.4.

4max

.

�5.6�0.0

�0.025

� 3.63.6

� 2±0

.2

90°±2°

0.5ma

x.

�1.6�1min.

1.35±0.1

�1.2max.1.2max.

6.5±

0.5

Laser chip

3-�0.45

Sub-mount

1.2±

0.1

2.3±

0.5

● �5.6mm (Open packaging spec①)TOP VIEW

4.9 �5.62

0.4

5

0.4

0.22

0.621.5

0.82

5.0 1.6 1.5 0.73.2

Optical distance

1.35±0.1

3-0.55max

3-0.4(2)(2) (3)(3)

1.61.6(1)(1)

1

(1)

0.62

● �5.6mm (Compatible frame)TOP VIEW

Easy ReplacementEasy Replacement

(Unit : mm)


RLD78MPA1


RLD78MRA1

λp(nm)

Wavelength

785

785

(mW)Po

5

4.5

(V)VR

2

2

ToprMax.(°C)

70

70

(mA)ITH

35

35

Iop(mA)

45

45

Vop(V)

1.9

1.9

θ//(deg)

11

11

(deg)θ

37

37

3

3

(mA)Im

0.15

0.15

(3)

LD

PD

(1)

(2)



Po(mW)


14

Lineup

●Low droop characteristics　　　　　No light absorption by the current block layer ensures high laser efficiency.●High breakdown resistance　　　　　The light-emitting region expands laterally and the optical density becomes lower, 　　　 increasing the COD level.

780nm High Speed Lasers780nm High Speed Lasers

Low droop characteristics contribute to high image quality

Laser printersLaser imaging applications

・High-speed infrared response・Industry standard φ5.6 mm diameter ・Low droop characteristics

These laser diodes are not only widely used aslight sources in laser printers, they provide theoptimal solution for a variety of applications asgeneral.

Dimensions 90°±2°

�3.6

�1.0

min

.0.4±0.1

1.0 ±

0.1 �4

.4+0

(3)

(1)

(2)

1.2 ±

0.1

6.5 ±

0.5

2.3 ±

0.5

Opt

ical d

istan

ce1.

35±0

.1

3-�0.45

�0�0.025�5.6

Laser chip

Cover glass

● �5.6mmTOP VIEW

Conventional Printer Device(Absorption Loss Waveguide Structure)

Our Product(Actual Refractive Index Waveguide Structure)

25

20

15

10

5

00 2 4 6 8

At 60℃

At 25℃

Optical Output (mW)

Dro

op (%

)

Droop Characteristics

Light is absorbed (lost)

No Absorption

Current blocklayer

Light-emittingRegion

(Unit : mm)

New Product:RLD78NZM1Conventional Product:RLD78NZH4


φ5.6mm

φ5.6mm

φ5.6mm

RLD78NZH2

RLD78NZH1

785

785

(mW)Po

10

5

(V)VR

2

2

Topr　Max.(°C)

60

60

(mA)ITH

20

20

Iop(mA)

35

27

Vop(V)

1.9

1.9

(mA)Im

0.35

0.35

θ//(deg)

11

11

6

3

(deg)θ

28

28

LD

(3)

PD

(1)

(2)

RLD78NZM1 785 10 2 60 10 20 1.9 1.0 9 628

φ



λp(nm)

WavelengthPo

(mW)


Optoelectronics 2007-Oct.2007-Oct.

-Laser Diodes

Laser DiodesLaser Diodes

Catalog No.50P5817E 10.2007 ROHM © TSU

1st. Oct. 2007.

Product Catalog

www.rohm.com

■ Safety

■ Packaging Specifications (Unit : mm)

DIRECT EXPOSURE TO BEAMINVISIBLE LASER RADIATION-AVOID

MAXIMUM OUTPUTWAVELENGTH

b LASER PRODUCTCLASS

Part 1040.10 and 1040.11This product complies with 21 CFR

615, Japan.

ROHM CO.,LTD.21.Saiin Mizosaki-cho. Ukyo-ku Kyoto

mWnm

Laser Diode

from this aperture

AVOID EXPOSURE-lnvisibleLaser radiation is emitted

SEMICONDUCTOR LASERINVISIBLEThe light emitted from laser diodes, while almost invisible to the human

eye, can cause retinal damage if viewed directly. Never look directly into the laser beam or through any lenses or fibers when the system is operating.

For optical axis alignment or other operations, we recommend the use of an infrared-sensitive camera (ITV) or wearing protective goggles.

The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical instruments. transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.


Tray Box

Productpackage

High radiation

frame

W

156 163 7

L H

(High radiation frame)

7

156

163

118

16

Antistatic laminatevacuum bag

75


Tray

120

Box

96

86Productpackage

�5.6

W

86 118 16

L H

(Other)



Tray

Packaging style

200 1000


240

Weight［g］



Tray

Packaging style

100 500


250

Weight［g］

170

27

160(Unit : mm)

(Unit : mm)

(Unit：mm) (Unit：mm)

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