chapter 1.quanta.hanyang.ac.kr/lecture/2014_1/chapter 1.pdfchap. 1. crystal properties and growth of...

Chapter 1.

Crystal Properties and Growth of Semiconductors

( )

Chap. 1. Crystal Properties and Growth of Semiconductors

1.1 ?

, ,

.

.


1.1 ?

) , ,

) ,

!!!

) , ,


(a) II III IV V VI

Zn

Cd

B

Al

Ga

In

C

Si

Ge

N

P

As

Sb

S

Se

Te

(b)

Elemental IV compounds

Binary III-V

compounds

Binary II-VI

compounds

Si

Ge

SiC

SiGe

AlP

AlAs

AlSb

GaN

GaP

GaAs

GaSb

InP

InAs

InSb

ZnS

ZnSe

ZnTe

CdS

CdSe

CdTe

Table. 1-1 (a) (b)


?

Si, Ge : , , Tr, ,

,

GaN, GaP, GaAs (Binary III-V) LED

GaAsP(ternary), InGaAsP(quaternary)

TV ZnS (II-VI)

Light detector InSb, CdSe, PbTe, HgCdTe

Gunn diode GaAs, InP

GaAs, AlGaAs, 3, 4

Energy band gap

.

Doping

,

: doping


1.2

(a) Crystalline solid :

.

(b) Amorphous solid : .

(c) Polycrystalline solid : .

Fig. 1-1

(a) (b) ,

(c) (a) .


1.2.1

Fig. 1-2 r=3a+2b 2

(lattice) :

(unit cell) :

(primitive cell) :


1.2.2

Fig. 1-3

.


1.2.2

Fig. 1-4 fcc


1.2.3

Miller index

.

, .

( ) .

{100} :

.

[100] :

:


1.2.3

Fig. 1-7


FCC ( , , )

FCC .

() Zincblende (III-V )

1.2.3

Fig. 1-8 : (a) , (b)(100)

a


1.2.3


SiO2(solid)+2C Si(solid) +2CO(gas)

Si(solid) +3HCl(gas) SiHCl3(gas)+H2(gas)

SiHCl3(gas)+H2(gas) Si(solid) +3HCl(gas)

Czochralski technique.

.

MGS

EGS

Metallurgical Grade Si

Electronic Grade Si

Fig. 1-10 Si ( )

1.3.1


.

.

.

1.3.2


1.3.2


1.3.3 (wafer)

(IC) (single-crystal)

.

,

, .

,

, (Flatness) .

Slicing, lapping, polishing .


1.3.3


1.3.4

EGS .

Si Si

(dopant) .

2

.

.

L

Sd

C

Ck

kd :

CS :

CL :


1.4 (epitaxy)

epi()+taxis()

()

()

()


1.4.1

Homoepitaxy

Heteroepitaxy

.

(liquid-phase epitaxy; LPE)

(vapor-phase epitaxy; VPE)

(molecular beam epitaxy; MBE)


1.4.1


(liquid-phase epitaxy; LPE)

Ex. GaAs melting point of 1238

Mixture of GaAs With Ga metal

Considerably lower melting point

Si, GaAs, AlGaAs, GaP


1.4.2

SiCl4+2H2 Si+4HCl(g)

SiCl4 1150-1250

Si epitaxial layer

HCl epitaxy layer .

SiH4 Si+2H2

(1000 ) epitaxial layer

impurities migration.


MOCVD or MOVPE

(CH3)3Ga+AsH3GaAs+3CH4 (700 )

GaAs

InP 2 AlGaAs 3, 4

.

III-V 1960 InP .

, .

1.4.2


1.4.2


1.4.3 (molecular beam epitaxy; MBE)

(physical vapor deposition; PVD)

10-9 Torr

.

(GaAs 600 )

(superlattice) (multi-layer)


1.4.3


, , LED

LED

Network VCSEL (photo-diode) ,

HBT/HEMT

Homework #1

6

Chapter 1.

1, 3, 5, 6


1.5 Q : In Sb 1.44 1.36.

, InSb()

. (100) ?

( : fcc .)


1.6 2.5

5.42. .


chapter 1.quanta.hanyang.ac.kr/lecture/2014_1/chapter 1.pdfchap. 1. crystal properties and growth of...

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