schrimpf muri

7/28/2019 Schrimpf MURI

1/16

Radiation Effects on Emerging Electronic

Materials and Devices

Ron Schrimpf

Vanderbilt University

Institute for Space and Defense Electronics


2/16

Team Members

Vanderbilt University

Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd

Massengill, Robert Reed, Ron Schrimpf, Bob Weller

Physics: Len Feldman, Sok Pantelides

Arizona State University

Electrical Engineering: Hugh Barnaby

University of Florida

Electrical and Computer Engineering: Mark Law, Scott Thompson

Georgia Tech

Electrical and Computer Engineering: John Cressler North Carolina State University

Physics: Gerry Lucovsky

Rutgers University

Chemistry: Eric Garfunkel, Evgeni Gusev


3/16

Institute for Space and Defense

Electronics

Resource to support national requirements in radiationeffects analysis and rad-hard design

Bring academic resources/expertise and real-worldengineering to bear on system-driven needs

ISDE provides:

Government and industry radiation-effects resource Modeling and simulation

Design support: rad models, hardening by design

Technology support: assessment, characterization

Flexible staffing driven by project needs Faculty

Graduate students

Professional, non-tenured engineering staff


4/16

Radiation Effects on Emerging

Electronic Materials and Devices

More changes in IC technology and materials

in past five years than previous forty years

SiGe, SOI, strained Si, alternative dielectrics, new

metallization systems, ultra-small devices Future space and defense systems require

understanding radiation effects in advanced

technologies

Changes in device geometry and materials affectenergy deposition, charge collection, circuit upset,

parametric degradation


5/16

Approach

Experimental analysis of radiation responseof devices and materials fabricated inuniversity labs and by industrial partners

First-principles quantum mechanical analysisof radiation-induced defects physicallybased engineering models

Development and application of afundamentally new multi-scale simulationapproach

Validation of simulation throughexperiments


6/16

Virtual Irradiation

Fundamentally new approach for simulating radiationeffects

Applicable to all tasks

QuickTime and a

TIFF (LZW) dec ompressorare needed to see this picture.


7/16

Physically Based Simulation of

Radiation Events

High energy protons incident on advanced CMOS integrated

circuit

Interaction with metallization layers dramatically increases

energy deposition

Device Description Radiation Events


8/16

Hierarchical Multi-Scale

Analysis of Radiation Effects

Materials

Device Structure

Device Simulation Circuit Response

IC DesignEnergy

Deposition

Defect Models


9/16

Current Joint Program of ISDE/VU and CFDRC

Geant4- accurate model

of radiation event

3D device simulation

n

e-

Blue =

+ ions

p

Improved Understanding of Space Radiation Effectsin Exploration Electronics by Advanced Modeling ofNanoscale Devices and Novel Materials

STTR Phase I Project, sponsored by NASA Ames(2005):Program Objectives:

Couple Vanderbilt Geant4and CFDRC NanoTCAD 3D Device Solver

Adaptive/dynamic 3D meshing for multiple ion tracks

Statistically meaningful runs on a massivelyparallel computing cluster

Integrated and automated interface ofGeant4 and CFDRC NanoTCAD

0.13um NMOS, Vd = 1.2 V , Vg = 0V

Two different ion strikes

Psub Contact / No-Contact

0.E+00

2.E-04

4.E-04

6.E-04

8.E-04

1.E-03

1. E-12 1. E-11 1. E-10 1. E-09 1. E-08 1. E-07 1. E-06

Time (s)

Drain

Current

(A)

. .. . -

-

- Adaptive

3D meshing - 3D Nanoscale transport- Physics based

transient response


10/16

Research Plan

Tasks defined and scheduled


11/16

Organization by Task

Radiation response of new materials

NCSU, Rutgers, Vanderbilt

Impact of new device technologies on radiation

response

ASU, Florida, Georgia Tech, Vanderbilt

Single-event effects in new technologies and ultra-

small devices

Florida, Georgia Tech, Vanderbilt

Displacement-damage and total-dose effects in ultra-small devices

ASU, Vanderbilt


12/16

Radiation Response of New

Materials

HfO2-based dielectrics and emerging high-k materials Metal gates

Interface engineering (thickness & composition)

Hydrogen and nitrogen at SiON interfaces (NBTI)

Substrate engineering (strained Si, Si orientations,Si/SiGe, SOI)

Defects in nanoscale devices

Energy deposition via Radsafe/MRED


13/16

Impact of new device technologies

on radiation response

SiGe HBTs Strained Si CMOS

Ultra-small bulk CMOS

Mobility in ultra-thin film SOI MOSFETs

TID response in scaled SOI CMOS Multiple gate/FinFET devices

Multi-scale hierarchical analysis of single-eventeffects


14/16

Single-event effects in new technologies

and ultra-small devices

Development/application of integrated simulation toolsuite Applications in all tasks

Effects of passivation/metallization on SEE

Tensor-dependent transport for SEE

Extreme event analysis Spatial and energy distribution of e-h pairs

Energy deposition in small device volumes


15/16

Displacement-damage and total-

dose effects in ultra-small devices

Physical models of displacement single events Microdose/displacement SEE in SiGe and CMOS devices

Single-transistor defect characterization

Link energy deposition to defects through DFT moleculardynamics

Multiple-device displacement events Dielectric leakage/rupture

0

2

4

6

8

10

0 5 10 15 20Film Thickness (nm)

VBD(V

)

Data From Sexton at al. 1998

2.2 nm

SiO2

5.4 nm

(Physical)

Al2O3

3.3 nm

SiO2(15%N)

3.3 nm

SiO2

SiO2

2.6 nm

(Equiv.

Oxide

Thick. )

Al2O3

VDD from National Technology Roadmaps

'97

'09

'03'01

'06


16/16

Collaborators

IBM SiGe, CMOS, metal gate,

high-k

Intel

Strained Si and Ge

channels, tri-gate, high-k,

metal gate

Texas Instruments

CMOS

Freescale

BiCMOS and SOI Jazz

SiGe

National

SiGe

SRC/Sematech CMOS, metal gate, high-k,

FinFETs

Sandia Labs

Alternative dielectrics,

thermally stimulated current NASA/DTRA

Radiation-effects testing

Oak Ridge National

Laboratory

Atomic-scale imaging

CFDRC

Software development

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