weekly group meeting report

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Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

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Weekly Group Meeting Report. Renjie Chen Supervisor: Prof. Shadi A. Dayeh. Part I Literature Review. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires. Experimental Details . SiNWs were synthesized by catalytic CVD growth, and the predominated orientation is - PowerPoint PPT Presentation

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Page 1: Weekly Group Meeting Report

Weekly Group Meeting Report

Renjie ChenSupervisor: Prof. Shadi A. Dayeh

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Part I

Literature Review

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Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305

Experimental Details • SiNWs were synthesized by catalytic CVD growth, and the predominated orientation is <111>• Ni pads were defined by EBL, and the TEM samples were prepared on the SiNx membrane• Annealing was done in cold-wall CVD, with Ar atmosphere and pressure of 2 x 10 -4 mbar

NiSi2 (111) || Si (111)NiSi2 [111] || Si [111]

Stress induced lowering of the diffusion coefficients

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Time-Dependent Study

• LNixSiy follows a square root dependence with annealing time

• LNixSiy is significantly shorter for oxidized NWs at any given time >5 min

• Two type of measurements give comparable results within the experimental error

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305

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Diameter-Dependent Study

• LNixSiy for these <111> orientated SiNWs increases for decreasing NW diameter, which can be fitted by an increase square root dependence.

• This indicate that the Ni flux through the silicided NW is dominated by surface diffusion.

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305

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Prolonged Ni Silicidation

Propagating Interface

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305

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/14Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305

Calculations

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Part II

Experimental Report

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Time-dependent Anneal Study

Anneal Temp Fin Width Time Sequence

250’C 30nm, 40nm, 50nm, 60nm, 70nm, 80nm,

90nm,100nm, 150nm, 200nm, 300nm, 500nm

5min, 10min, 20min, 40min, 60min, 90min

300’C 30s, 2min, 5min, 8min, 10min, 20min

Sample 1 for 250’C Test Sample 2 for 300’C Test

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Sample 1 for 250’C Test Sample 2 for 300’C Test

30nm Fin [110] 30nm Fin [110]

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On the Same Sample

4 min

300 ‘C Anneal Test

6 min 8 min

10 min 15 min 20 min

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Time Dependent 300’C, Fin [110], width ~ 30nm

Fin-width Dependent 300’C, 5min, Fin [110]

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RTA Profile

150’C

300’C

5 s 30 s

250’C

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Plan

1. I still have 1 sample with 10units, that could be used for the time dependent annealing study

2. Work on the neural probe samples once receiving them

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Thank youQ&A