working of a transistor

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  • 7/31/2019 Working of a Transistor

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    Slide 1

    6.071 Bipolar Transistors 1

    emitter

    collector

    base

    npn bipolar transistor

    The Transistor as a voltage-controlled resister

    control knob

    current in

    current

    out

    e b c

    2N2222

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    Slide 2

    6.071 Bipolar Transistors 2

    The Diode

    V (volts)

    I(A) 0.6V

    As described, but turns on at 0.6V (for a Si diode).

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    Slide 3

    6.071 Bipolar Transistors 3

    Normally off (base/emitter

    reverse biased), small input

    current and voltage relative

    to emitter turns it on, switching

    and amplifying

    emitter

    collector

    base

    Transistor Properties

    IC = IB

    IE = IC+ IB = (1+)IB

    VBE = VB VE = +0.6V

    ~ 100, but changes withtemperature and with VCE

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    Slide 4

    6.071 Bipolar Transistors 4

    10 k

    Transistor SwitchVCC

    R

    on

    off

    IC IB

    collector current depends onthe voltage drop across the

    bulb.

    IB =VCCVBE

    R

    since the transistor state

    depends on the base current,

    leaving the base open circuited

    would eventually shut down the

    transistor, but this is sloppy.

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    Slide 5

    6.071 Bipolar Transistors 5

    Transistor Switch

    VCC

    IBR

    VBE

    VCC= IR+VBE

    IB =VCCVBE

    R

    IC=VCCVBE

    R

    VBE=0.6V

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    Slide 6

    6.071 Bipolar Transistors 6

    Emitter Follows as a Current Source #1

    Vin

    +10V

    -10V

    1k1k

    load

    +10V

    -10V

    Vin

    What is Vout?

    Vout = Vin - 0.6V

    If the base/emitter is forward biased

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    Slide 7

    6.071 Bipolar Transistors 7

    Emitter Follows as a Current Source #2

    Vin

    +10V

    -10V

    1k1k

    What is when the transistor is off?Vout

    1k 1k

    -10V

    -5V

    +10V

    -10V

    1k1k

    high

    impedance

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    Slide 8

    6.071 Bipolar Transistors 8

    Emitter Follows as a Current Source #3

    Vin

    +10V

    -10V

    1k1k

    At what base voltage does it turn off?

    VBE = 0.6V

    Vin = 4.4V

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    Slide 9

    6.071 Bipolar Transistors 9

    Emitter Follows as a Current Source #4

    Vin

    +10V

    -10V

    1k1k

    +10V

    -10V

    Vin

    Vin

    Vout

    Vout=

    Vin 0.6V;

    5V;

    Vin 4.4V

    Vin < 4.4V

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    Slide 10

    6.071 Bipolar Transistors 10

    Biasing 1

    Often signals are AC (or capacitively) coupled into amplifier

    stages. Note a single sided voltage supply can not amplify

    the negative inputs.

    Vin

    +VCC

    VoutR

    Vin

    VoutVB

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    Slide 11

    6.071 Bipolar Transistors 11

    Biasing 2

    Vin

    Solve this by adding a DC to the base to shift the signal so that there

    is no clipping and AC coupling the output.

    RE

    R1

    R2

    VCC

    Vout

    select

    want

    VCC = 15V

    R1 || R2

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    Slide 12

    6.071 Bipolar Transistors 12

    Biasing 3

    Vin

    RE

    R1

    R2

    VCC

    Vout

    VCC

    =15V, R1|| R

    2

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    Slide 13

    6.071 Bipolar Transistors 13

    oscillator

    Frequency

    amplitude

    trigger

    Input #1 Input #2

    oscilloscope

    time-base display

    Vout1k

    dual voltage source

    12V

    33k

    Vin

    time

    Vout

    time

    Vin

    Demo: BJT Emitter Follower #1

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    Slide 14

    6.071 Bipolar Transistors 14

    Demo: BJT Emitter Follower #2

    oscillator

    Frequency

    amplitude

    Input #1 Input #2

    oscilloscope

    x,y display

    Vout1k

    dual voltage source

    12V

    33k

    Vout

    Vin

    Vin

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    Slide 15

    6.071 Bipolar Transistors 15

    Emitter Follower

    VCC

    Rload

    Rin = Rload

    The output voltage is almost the

    base voltage, with a 0.6 V cutoff.Notice the change in impedance.

    VB

    Vout = VB 0.6V

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    Slide 16

    6.071 Bipolar Transistors 16

    The Emitter Follows Has Unit Voltage Gain;

    Is it Useless?

    Vin

    +VCCV

    in= V

    out

    VCC

    VoutR

    Note: IE =VoutR

    =VinR

    and IB =IE

    1 + =

    VinR 1+ ( )

    Pin =Vin

    2

    R(1+);Pout =

    Vin2

    RP= IV

    There is a gain in Power of.

    The effective base resistance is R.

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    Slide 17

    6.071 Bipolar Transistors 17

    Dont design with

    Vin

    VCC

    VoutRE

    RE

    Here the quiescent point was

    selected by bleeding a small

    amount of current into the base.

    Now the operating point depends

    critically on which variestremendously from device to

    device and with temperature.

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    Slide 18

    6.071 Bipolar Transistors 18

    Problem: Look at last circuit as is varied

    from 100 to 200.

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    Slide 19

    6.071 Bipolar Transistors 19

    Current SourceVCC

    Rload

    Iload = IC =VB 0.6V

    R

    IC IE, for large

    The base voltage controls

    the current through the loadup to the limit of VCC.

    R

    VB

    VE

    VE = VB 0.6V

    IE =VER

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    Slide 20

    6.071 Bipolar Transistors 20

    Common Emitter #1

    The common emitter configuration

    provides a (negative) voltage gain. (1)Set the quiescent current such that

    VC = VCC/2 Want a voltage drop of

    VC over RC.

    VCC

    Vin

    RC

    VC

    RER2

    R1

    IC = Iq =VCRC

    =VoutRC

    ;

    IB =VinRE

    =IC

    VoutVin

    =RCRE

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    Slide 21

    6.071 Bipolar Transistors 21

    Common Emitter

    So RC = VCC/(2 Iq).

    Gain = -RC/RE

    RE is necessary for stability,

    otherwise there is a small resistance

    rtr~ 0.026V/IE, but this is very

    temperature sensitive.

    VCC

    Vin

    RC

    VC

    RER2

    R1

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    Slide 23

    6.071 Bipolar Transistors 23

    Voltage Transfer

    VL =RL

    RL + RthVth

    Rth

    RLVth so if VL~Vth

    Rth

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    Slide 24

    6.071 Bipolar Transistors 24

    Current Transfer

    IL =RN

    RL + RNIN

    RLIN so if IL~IN

    RN >> RL

    RN

    IL

    For efficient current transfer keep the load impedance small

    compared to the source impedance.

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    Slide 25

    6.071 Bipolar Transistors 25

    Power Transfer #1

    VL =RL

    RL + RthVth

    Rth

    RLVthI=

    Vth

    (RL + Rth )

    PL = VLI=RL

    RL + Rth( )Vth

    Vth

    RL + Rth( )=

    RLVth2

    RL + Rth( )2

    PL

    Rth RL

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    Slide 26

    6.071 Bipolar Transistors 26

    Power Transfer #2

    IL =RN

    RL + RN

    IN

    RLIN RN

    IL

    PL = IL2RL =

    RN2 IN

    2 RL

    RL + RN( )2

    PL

    RN RL

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    Slide 27

    6.071 Bipolar Transistors 27

    Unity-gain phase splitter

    Vin (+)

    goal: from an AC signal generate a copy and its inverse.

    Vout = Vin(+)

    Vout+ =Vin (+)

    4.7k

    4.7k

    56k

    150k

    20V

    Vout+

    Vout

    emitter follows

    unity gain

    common emitter

    with RC=RE, gain=-1

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    Slide 28

    6.071 Bipolar Transistors 28

    Biasing Unity-gain phase splitter

    4.7k

    4.7k

    56k

    150k

    20V

    15V

    5V

    5.6V

    choose VE = 5V

    VB = 5.6V

    since IC ? IE, there is a drop

    of 5V over both 4.7kresistors.

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    Slide 29

    6.071 Bipolar Transistors 29

    Darlington Pair

    Useful for large current applications,

    and high input impedance. They are

    slow, however. Base to Emitter drop

    is 1.2 V.

    2

    11 2

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    Slide 30

    6.071 Bipolar Transistors 30

    Transistor AND Gate

    Ain

    Bin

    out

    6V

    Ain Bin out

    low low low

    low high low

    high low low

    high high high

    Transistors form thebasis of logic gates, and

    of integrated circuits.

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    Slide 31

    6.071 Bipolar Transistors 31

    Transistor OR Gate

    Ain

    Bin

    out

    6V

    Ain Bin out

    low low low

    low high high

    high low high

    high high high

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    Slide 32

    6.071 Bipolar Transistors 32

    Properties of Bipolar Transistors

    (current gain) is not a parameter, it varies with

    everything.IC,max - maximum collector current rating.

    BVCBO - maximum collector to base voltage.

    BVCEO - maximum collector to emitter voltage.

    VEBO - emitter to base breakdown voltage.

    PD - maximum collector power dissipation.

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    Slide 33

    6.071 Bipolar Transistors 33

    Datasheet of 2N2222 (1 of 3)

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    Slide 34

    6.071 Bipolar Transistors 34

    Datasheet of 2N2222 (2 of 3)

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    Slide 35

    6.071 Bipolar Transistors 35

    Datasheet of 2N2222 (3 of 3)

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    Slide 36

    6.071 Bipolar Transistors 36

    Voltage Regulator

    Vin

    Vout = VzenerREA simple voltage regulator.

    Poor ripple suppression,

    requires a zener with high

    power rating, and variations

    with load impedance.

    Real

    Zener

    Ideal

    Zener

    I

    V

    Zeners are diodes that have

    variable resistance. Specifically,

    zeners have a constant currentoutput over a range of input

    voltages. Thus, by providing a

    constant current to a circuit,

    zeners can be used as voltage

    regulators.

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    Slide 37

    6.071 Bipolar Transistors 37

    Voltage Regulator

    Vin

    Vout

    = Vzener

    -0.6 V

    R

    Emitter follower configuration.

    Base current is only 1/ of supplycurrent.

    RC filter reduces ripple.

    VzenerC

    Rload

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    Slide 38

    6.071 Bipolar Transistors 38

    Switching inductive loads

    The voltage kick from

    interrupting current flow in

    an inductor can lead to

    voltage breakdown in the

    transistor. A backwards

    diode across the inductive

    load shorts this out.

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    Slide 39

    6.071 Bipolar Transistors 39

    Common Collector AmplifierVCC

    Rload

    An amplifier with a current gain

    (no voltage gain) and offset toavoid clipping negative inputs.

    VB

    R1

    R2

    C1C2

    RE

    R1 and R2provide the

    DC offset and C1 acts

    as a filter (so inputs do

    not disturb quiescent

    point).

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    Slide 40

    6.071 Bipolar Transistors 40

    Common Collector AmplifierVCC

    1. choose a quiescent current, 1 mA

    VB

    R1

    R2

    C1C2

    RE

    2. VE = Vcc/2(allows the largest symmetric input).

    RE =VCC 2

    IQ=VCC 2

    1mA

    VCC

    Rload

    R1

    R2

    C1C2

    RE

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    Slide 41

    6.071 Bipolar Transistors 41

    VCC

    Rload

    R1

    R2

    C1C2

    RE

    Common Collector AmplifierVCC

    3. Set the quiescent current via R1 & R2.

    R1R2

    =VCC VB

    VB=VCCVE 0.6V

    VE+ 0.6V

    VE = VCC 2recall:

    So, forget0.6V and R1 = R2

    Note that Rbase = RE,

    so R1||R2

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    Slide 42

    6.071 Bipolar Transistors 42

    Common Collector AmplifierVCC

    Rload

    VB

    R1

    R2

    C1C2

    RE

    4. Choose coupling capacitors

    The effective AC input resistance

    Rin = R1 R2 RE Rload( )

    C1 and Rin form a high-pass filter

    C1 =1

    3dBRin

    C2 and Rload also form a high-pass filterC2 =

    1

    3dBRload

    VCC

    Rload

    R1

    R2

    C1C2

    RE

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    Slide 43

    6.071 Bipolar Transistors 43

    Common Collector Amplifier

    VCC

    Rload

    VB

    R1

    R2

    C1C2

    RE

    base voltage

    output

    frequency

    response