1 8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)

KETEK

SiPM

Silicon Photomultipliers

Recent developments at KETEKJuly, 2015

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SiPM solutions realized by KETEK

8 July 2015

• KETEK company profile

• KETEK SiPM off-the-shelf devices - status and latest achievements

• KETEK customized solutions

• KETEK production setup

• MEPHI / KETEK CMOS integration

• Summary and outlook

3 8 July 2015 KETEK – SiPM – Recent Developments – Photodet 2015 (Troitsk)

KETEK

SiPM

• Midsize, family-owned enterprise, formation 1989 by Dr. Josef

Kemmer

• Number of employees: 81

• Managing directors: Silvia Wallner, Dr. Reinhard Fojt

• Major product line: SDD modules, detector electronics and

complete systems

• Global market leader (SDD) 2014: approx. 45%

• Emerging product line: Silicon Photo Multiplier

Modules (SiPM)

• Very high PDE- up to 60% for 50µm cell type @420 nm- up to 37% for 15µm cell type @420 nm

• Huge gain- min. 106

• Optimized for blue light sensitivity- 420nm peak sensitivity

• Low dark rate and excess noise- DR down to 100kHz/mm2

- XT down to below 5% at 20% Overvoltage- DR and XT dep. on cell- and device type

• Huge bias voltage range ofstable operation- up to 40% overvoltage

• Extremely low temperature coefficient- below 1% above 10% overvoltage

• Single channel portfolio- 4 chip / package sizes- 5 micropixel types

Key Features of KETEK´s SiPM Sensors

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VBD: 25.5 V

PM1150: Measurements performed by CERN / Iouri Musienko(1.0 mm2 active area, 50 µm cell pitch, 70% GE, no trench)

• Very high PDE- up to 60% for 50µm cell type @420 nm- up to 37% for 15µm cell type @420 nm

• Huge gain- min. 106

• Optimized for blue light sensitivity- 420nm peak sensitivity

• Low dark rate and excess noise- DR down to 100kHz/mm2

- XT down to below 5% at 20% Overvoltage- DR and XT dep. on cell- and device type

• Huge bias voltage range ofstable operation- up to 40% overvoltage

• Extremely low temperature coefficient- below 1% above 10% overvoltage

• Single channel portfolio- 4 chip / package sizes- 5 micropixel types

Key Features of KETEK´s SiPM Sensors

CERN06: Measurements performed by CERN / Iouri Musienko(15µm cell pitch, 37% PDE max)

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KETEK SiPM Portfolio

NEW Package 2.0

NEW SiPM Array

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4.5 5.0 5.5 6.0 6.50

200

400

600

800

1000

Co

un

ts

Time [ns]

Pos 1 Pos 2 Pos 3 Pos 4 Pos 5 Pos 6 Pos 7 Pos 8 Pos 9

repeated: Pos3

• Transit-Time-Delay (TTD) leads to asymmetrical SPTR distribution

• TTD is dominating factor for SPTR

• Improvement of TTD will help to achieve better SPTR

Motivation for SPTR- and TTD-studies

3 4 5 6 7 8 9 100

2

4

6

8

10

Am

plit

ud

e

[mV

]

Time [ns]

Pos 1 Pos 2 Pos 3 Pos 4 Pos 5 Pos 6 Pos 7 Pos 8 Pos 9

repeated: Pos 3

Averaged waveforms Localized SPTR measurements

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Comparison of Transit-Time-Delay and SPTR• Significant decrease of TTD (900 ps -> 170 ps)

• Better amplitude stability

• Symmetrical SPTR distribution with 215±7 ps

3.5 4.0 4.5 5.00.0

0.2

0.4

0.6

0.8

1.0

Rel

. Cou

nts

Time [ns]

Standard PM3350T Modified PM3350T

FWHM=(215+/-7)ps

4 5 6 7 8 9 10

0

2

4

6

8

10

12

Am

plitu

de [

mV

]

Time [ns]

Standard PM3350T Modified PM3350T

Averaged waveforms SPTR measurements

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Enhanced optical cross-talk suppression

1st TrenchGeneration Metal filled

trench

< 1 µmAt 5 V overvoltage (typical operation condition):Reduction from 17 % down to < 3 % (factor 5)

• Measurement based on dark rate ph.e. spectrum

• XT = Int(>1.5 phe)/Int(>0.5 phe)

XT reduction by factor 5

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Customized SiPM solutions

• LTCC support plate with BGA solder pads

• Two 64-channel SiPM-chips

• Thin glass lid chip protection

• Glop top bond wire protection

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Customized packaging

6.0 mm x 6.0 mmActive Area

TO8-package incl. cooling for extremely low DR

KETEK Ultra Low Noise SiPM:Flexible technology for customized packaging solutions

• Lower Noise at lower temperatures

• Different SiPMs up to 36mm²

• Quartz-Window with double-sided ARC

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Customized packaging

Customized Arrays

256 channel array build with PM11

KETEK Sensor Arrays:Flexible technology for customized array solutions

• Array solution with SMD devices

• Different sensor boards

• Large area detection systems

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SiPM production setup – two facilities

KETEK inhouse production

• Technology development

• Prototyping

• Customized products

• Variable packaging options

KETEK foundry production

• High volume production

• Fast throughput time

• Low cost

• Electronics integration

Excellent setup for cost effective innovations

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SiPM – CMOS-integration

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• R&D activity together with MEPHI

• Target: SiPM readout for large area SiPM

• Problem: Signal degradation with scaling of the active area due to increase of the parasitic capacitance

• Approach:- signal of small micro pixel sub-groups is amplified on chip level- sub-group signals are capacitive decoupled from each other- CMOS only outside of active area to keep GE (PDE) as high as possible- Separation of CMOS- and sensor part minimizes electro-optical crosstalk of the active elements

G. Visser (Indiana Univ.)

Summary and Outlook

• KETEK present standard SiPM devices feature- a high PDE- a very good voltage and temperature stability- a low excess noise

• KETEK SiPM technology and setup supports customized- chip design- packaging solutions

• KETEK new standard Package 2.0 introduces- 4-side-tileability- improved TTD / SPTR - reduced XT

• Present focus- Further improvement of the basic SiPM parameters PDE, DR and recovery time- enhanced GE

• Outlook- Together with MEPHI RnD on integration of electronics on chip-level

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2 6YEARS1989 - 2015THANKY O U

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Websitewww.ketek.biz

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Basic Construction of the KETEK Microcell

• Silicon P on N structure with high Geiger efficiency

• Shallow entrance window with high quantum efficiency

• Optimized geometrical fill factor High photon detection efficiency

Section of KETEK SiPM Microcell

P+- Window

N - Silicon

Bias LineQuenchingResistor

Trench

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KETEK SiPM Technologies

KETEK Trench Technology• Technology with improved optical barrier

and low-RC readout

• Devices with low crosstalk and improved timing

• Particularly suitable for large microcells and large area devices

KETEK Non-Trench Technology• Technology optimized for maximum

geometrical efficiency (GE)

• Devices with very high PDE and dynamic range

• Particularly suitable for small microcells and small active area

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Ongoing

6.0 mm x 6.0 mmActive Area

KETEK TSV Technology:Further improved geometrical efficiency (GE)

• R&D on Through Silicon Via interconnects

• Optimized geometrical efficiency

• 4-site tileable devices

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