rf-soi for rffe solution: eda...

22
RF-SOI for RFFE Solution: EDA Perspective Feng Ling, Ph.D. Founder and CEO 2018 Japan SOI Workshop

Upload: others

Post on 20-Oct-2020

7 views

Category:

Documents


0 download

TRANSCRIPT

  • RF-SOI for RFFE Solution: EDA Perspective

    Feng Ling, Ph.D.

    Founder and CEO

    2018 Japan SOI Workshop

  • Xpeedic Confidential Page 2

    Outline

    • Design challenges for RFFE from EDA perspective

    • Xpeedic’s solution for RF-SOI• EDA tools enabling both silicon and module

    • IPD enabling integration and miniaturization for RFFE

    • Summary

  • Xpeedic Confidential Page 3

    Design Challenges

    • RFFE design challenges• More complexity

    • More components, e.g. MIMO and CA filter

    • More performance demand, high isolation, low IL

    • Smaller size

    • Lower cost

    • EDA for RFFE design need support• Multiple technology

    • High frequency, mmWave

    • Filter, antenna design

    • Advanced packaging, FOWLP, Interposer, 3DIC

    • More EM content• EM-circuit simulation• Integrated IC-package design flow• Antenna, filter design integrated

  • Xpeedic Confidential Page 4

    Xpeedic Solution

    •Electromagnetics-aware IC-Package-Board solution

    EDA

    Example text

    SiP

    • System-in-Package (SiP)• RF module with IPD

    •First-pass IPD design flow•IPD library available•Turn-key customized IPD design

    IPD

    IPD

    SiPEDAStacked Die

    2.5D IC(Si Interposer)

  • XPEEDIC EDA FOR RF-SOI

  • Xpeedic Confidential Page 6

    EDA Solution from IC to System

    ICPKG

    System

    ❑ Passive modeling and extraction for advanced node.

    ❑ Signal and power integrity analysis for advanced packaging

    ❑ System level channel analysis

    ❑ Accurate modeling of via, trace, and cable.

    Foundation: 3D Electromagnetic solver technologies

  • Xpeedic Confidential Page 7

    Virtuoso-Integrated IC Design Flow

    System Design

    Schematic Design

    Circuit Simulation

    Layout

    Verification

    Tapeout

    IRISPassive extraction

    iModelerPassive modeling and

    synthesis

    MetisIC-package co-simulation

    Include Package

    HFSS

    Passive verification

    IRIS-HFSS

  • Xpeedic Confidential Page 8

    • IRIS solver technology• Fast: Accelerated MoM technology

    • Accurate: 3D conductor and via model, skin effect and proximity effect

    • Advanced process support• Width/spacing dependence

    • rho table, bias table

    • Seamlessly integration in Cadence Virtuoso

    IRIS: Virtuoso-integrated EM Simulation Tool

    350nm 130nm 90nm 28nm 14nm

  • Xpeedic Confidential Page 9

    IRIS-HFSS Flow

    HFSS 3D Layout Q3D

    IRIS-HFSS

    Thin layer treatment

    Rho-table support

    Bias-table support

    Via defeaturing support

    Auto HFSS/Q3D generation

    De-embed

  • Xpeedic Confidential Page 10

    iModeler: Automated Fast PDK Model Generation

    Foundry PCells

    Templates for• Inductor• MiM Cap• MoM Cap• Transformer

    Process Technology

    Shielding/Dummy

    DRC Rule Deck LVS Rule Deck

    Schematic/Layout/Symbols

    Synthesis Databse

    Spectre/HSPICE Scalable Model

    ANN Engine

    Optimize MoM Solver

    PDKTemplate

    Core

    Process

    * *M

  • Xpeedic Confidential Page 11

    Metis 1: IC-Package Co-design Flow

    • Example: IPD design in RFFE module

    IncludePackage

    LPF mounted on package substrateLow Pass Filter (LPF)

    Spec(dB)

    Freq (MHz)Spec value

    NO PKGWith PKGMin Typ Max

    IL 869-960 0.7 Pass Fail

    RL 869-960 18 Pass Fail

    RJ@2f 1738-1920 20 Pass Fail

    RJ@3f 2607~2880 15 Pass Pass

    Earlier package consideration in the flow is a must.

  • Xpeedic Confidential Page 12

    Metis 2: Silicon Interposer with TSV• 2.5D interposer with TSV enables heterogeneous

    integration and delivers “More-than-Moore”

    Silicon partition with interposerMarket: FPGA

    Logic+memory on interposerMarket: CPU, GPU, network processor

  • Xpeedic Confidential Page 13

    • A complete model with layout and bumps

    uBump

    C4 Bump

    Metis 2: Silicon Interposer with TSV (cont’d)

    SI/PI Analysis

    • A complete SI/PI analysis flow for silicon interposer with TSV and 3D IC.

    Time (hour)

    Metis 56 min

    HFSS 7hr 50min

    Return Loss Insertion Loss

  • XPEEDIC IPD ENABLE INTEGRATION FOR RF-SOI

  • Xpeedic Confidential Page 15

    What is IPD

    • Integrated Passive Device• Thin film process

    • High metal conductivity, high substrate resistivity

    • Thin film resistor, MIM capacitor, Through substrate via, magnetic material…

    • IPD advantages• Small size, low profile, friendly integration, great consistency, low cost

    • Size and cost reduction for hand-held, wearable applications

  • Xpeedic Confidential Page 16

    IPD applications

  • Xpeedic Confidential Page 17

    Xpeedic IPD

    IPD Suite

    SiP Suite

    IPD Foundries

    Dedicated EDA Tools

    High Resistivity Silicon

    Glass

    Through Glass Via

  • Xpeedic Confidential Page 18

    IPD Coupler XS0808C2G12FM12

    0.8×0.8×0.2 mm3

    LTCCcounterpart

  • Xpeedic Confidential Page 19

    IPD Balun XS0505B2G45WA20

    LTCCcounterpart

    0.5×0.5×0.35 mm3

  • Xpeedic Confidential Page 20

    IPD Diplexer XS0808D2G50WA03 XS1608D960MWA04

    0.8×0.8×0.35 mm3

    LTCCcounterpart

    1.6×0.8×0.35 mm3

    LTCCcounterpart

  • Xpeedic Confidential Page 21

    Summary

    • RFFE design challenges requires EDA solution to support more complexity and integration;

    • Xpeedic’s EDA solution has been certified in multiple RF-SOI technologies, which enables IC designers to design with confidence and thus achieve fast time-to-market;

    • Xpeedic’s silicon-proven IP on IPD provides viable solution for RF front end integration.