esycom 5 avril 2005 c. r. 1 equipe systemes de communication et microsystemes : esycom / ea 2552...
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ESYCOM 5 avril 2005 C. R. 1
EQUIPE SYSTEMES DE COMMUNICATION
ET MICROSYSTEMES : ESYCOM / EA 2552
COMMUNICATION SYSTEMS AND MEMS TEAM
C. Rumelhard
ESYCOM 5 avril 2005 C. R. 2
1 – Origin of ESYCOM
2 – Configuration of ESYCOM
3 – An example of item: Microwave Photonics
4 – Synthesis and prospects
SUMMARY
ESYCOM 5 avril 2005 C. R. 3
1 – Origin of ESYCOM
• 1994: Master High Frequency Communication Systems, cooperation: UMLV, CNAM, ESIEE, INT Evry
• 1996: High Frequency Electronics Pole with CNAM, ESIEE, UMLV in Marne la Vallée
• Jan. 2000: Label for 2 years as “Equipe d’accueil” by french Research Ministry under the name: Equipe Systèmes de Communication, ESYCOM
• Jan. 2002: new label for 2 years
ESYCOM 5 avril 2005 C. R. 4
• in 2003: association with MEMS team of ESIEE => Equipe Systèmes de Communication et Microsystèmes, ESYCOM
• Jan. 2004: label for 2 years
• Oct. 2005: cooperation with french CNRS in a « Groupement d’Intérêt Scientifique »
• Oct. 2005: label for 4 years (2006-2009)
1 – Origin of ESYCOM
ESYCOM 5 avril 2005 C. R. 5
• Electromagnetism and applications, UMLV, ESIEE• Digital wireless communications, ESIEE• Microsystems and microtechnologies, ESIEE, CNAM, UMLV• Photonics and microwaves, CNAM, ESIEE, UMLV
Research items
High Frequency Measurements
• Antennas, Propagation and EMC, UMLV• Characterisation of circuits and digital communication systems in microwaves and optics, ESIEE• Photonics and microwave characterisation, CNAM
MEMS technology, ESIEE
2 – Configuration of ESYCOM
ESYCOM 5 avril 2005 C. R. 6
1 - Electromagnetism and applications UMLV, ESIEE- Numerical computations for electromagnetism- Antennas and networks - EMC, propagation and mastering of hertzian channel
2 – Digital Wireless Communications ESIEE- Transmitter/Receiver architectures - Signal and image coding
3 - Microsystems (MEMS) and technology ESIEE, CNAM, UMLV- Sensors, actuators and associated electronics - RF and optical MEMS
4 - Photonics and microwaves CNAM, ESIEE, UMLV- Microwave circuits and links in optics- Photonics and microwave components
2 – Configuration of ESYCOM
Research items
ESYCOM 5 avril 2005 C. R. 7
• 4 research items• 34 teachers-researchers• 29 Ph D• 5 technicians/engineers• 15 Ph D passed since 2000• 3 measurement equipments• MEMS technology
2 – Configuration of ESYCOM
ESYCOM 5 avril 2005 C. R. 8
2 – Configuration of ESYCOM
Teachers-
researchers Ph D
Technic.
Techno
Technic.
Engin.
UMLV 9 9 1
CNAM 4 4 0,2
ESIEE 21 16 2,5 (8) 1,2
ESYCOM 34 29 2,5 (8) 2,4
Human resources
ESYCOM 5 avril 2005 C. R. 9
2 – Configuration of ESYCOM
29 Ph D:
T1 : French research ministry fundingT2 : Cifre fundingT3 : R/D contractsT4 : Foreign affairs ministry, foreign government fundingT5 : Institutions or industry fundingT6 : Others
T223%
T137%
T310%
T413%
T57%
T610%
ESYCOM 5 avril 2005 C. R. 10
Main activities
• European network of excellence: Network of Excellence in broadband Fiber Radio Techniques and its Integration Technologies: NEFERTITI
• European network of excellence: Antenna Center of Excellence: ACE • 3 french RNRT (National Research Network in Telecommunications) contracts
• 3 ANVAR contracts• 1 CNES contract• 1 CNRS contract• 1 ACI –Ville contract• etc…
2 – Configuration of ESYCOM
ESYCOM 5 avril 2005 C. R. 11
Main activities
• Organisation of Europan Microwave Week in Oct. 2000 in Paris La Défense: 3 conferences, 11 workshops, 3 short courses, 1 exhibition2000 registrations conf. and workshops, 1300 visitors of exhibition, 38 countries
• Organisation of 3 Summer Schools on “RF and Microwave Systems” - Sept. 2001: Architectures for RF systems (ESIEE) - Sept. 2002: Mastering of hertzian channel with several
communication systems (UMLV)- March 2004: Advanced design of MMICs for millimeter waves,
photonic and multifunction applications (CNAM)
2 – Configuration of ESYCOM
ESYCOM 5 avril 2005 C. R. 12
2 – Configuration of ESYCOM
Item 1
Electroma-gnetism
Item 2
Wireless communic.
Item 3
Microsyst.-microtechno
Item 4
Microwave
photonics Total
Scientific
books2 3 5 6 16
Transactions 22 11 16 5 54
Conferences 48 50 59 28 175
Patents 3 4 6 2 15
Ph D 4 5 5 6 20
Publications
ESYCOM 5 avril 2005 C. R. 13
3 – An example of item: microwave photonics
• 3 professors, 2 lecturers, 4 passed Ph D, 5 Ph D, 5 Engineer diploma memoires
Why microwave photonic links? • Signal distribution in phased array antennas : commercial satellites or military planes. A few metres.
• Radio over fiber. Few km for microwaves over optics and a few tens of meters for hertzian microwave link
• Optical distribution of a signal in very high bit rate electronic systems. A few m or a few tens of m.
ESYCOM 5 avril 2005 C. R. 14
ESYCOM 5 avril 2005 C. R. 15
ESYCOM 5 avril 2005 C. R. 16
Enjeux des systèmes de Défense
Les technologies Optoélectronique et Hyperfréquence doivent être intimement liées pour jouer un rôle stratégique dans les systèmes futurs
Antennes conformes multifonctions distribuées
Choix de
systèmes reconfigurables
à antennes actives
conformes
distribuées
multi-faisceaux
& multifonctions (antenne partagée: R/GE/Coms)
ESYCOM 5 avril 2005 C. R. 17
ESYCOM 5 avril 2005 C. R. 18
Near future: high bit rate optical connections
5 à 10 years:Chip to chip
communications
2 à 5 years: Card to card
communications
ESYCOM 5 avril 2005 C. R. 19
• Establishment of a library of models to simulate a complete microwave photonic link with a non linear frequency domain simulator ( ADS). Many simulations in gain, noise and non linearities ofmicrowave photonic links (3 CNAM memoires + part of a thesis)
ESYCOM + Thales Airborne Systems
3 – An example of item: microwave photonics
Circuits for microwave photonic links
ESYCOM 5 avril 2005 C. R. 20
Microwave optical links
laser
ampli driver
Optical fiberphoto-détector
Low noiseampli
RF RF
= 1,55 ou 1,3 ou 0,8 µm
Intensity Modulation Direct Detection
Direct modulation
laser
ampli driver
Optical fibrephoto-détector
Low noise ampli
RF RF
= 1,55 ou 1,3 ou 0,8 µm
D Dmodulator MZ ou EA
I M external modulation
ESYCOM 5 avril 2005 C. R. 21
Laser diode 50 km OpticalFibre
Photodiode
biasing current : 22 mAmodulation current: 0.1 mAfrequency: 0 - 20 GHz
Optical link
ESYCOM 5 avril 2005 C. R. 22
Laser diode Opticalfibre
Photodiode
Laser output
Optical link
m1freq=4.086719GHzmag(Vopt_laser)=0.000132
0 2 4 6 8 10 12 14 16 18 20
0.00000
0.00005
0.00010
0.00015
freq, GHz
mag(V
opt_
laser)
m1
ESYCOM 5 avril 2005 C. R. 23
Laser diode Optical Fibre (50 km)
Photodiode
optical fibre output
Optical link
m2freq=4.087GHzmag(Vout_FO)=1.323E-6
0 2 4 6 8 10 12 14 16 18 20
0.0
5.0E-7
1.0E-6
1.5E-6
freq, GHz
mag(V
out_
FO
)
m2
ESYCOM 5 avril 2005 C. R. 24
Laser diode Optical fibre (50 km)
Photodiode
Photo-current:
Optical link
m3freq=4.087GHzmag(Iph_PIN.i)=9.529E-7
0 2 4 6 8 10 12 14 16 18 20
0.0
2.0E-7
4.0E-7
6.0E-7
8.0E-7
1.0E-6
freq, GHz
mag(I
ph_P
IN.i)
m3
ESYCOM 5 avril 2005 C. R. 25
Laser diode Optical fibre (50 km)
Photodiode
Output on 50 :
106/10
50
6
10I 2.
50
10 A
m4freq=4.087GHzdBm(Vout_link)=-76.255
0 2 4 6 8 10 12 14 16 18 20
-160
-140
-120
-100
-80
-60
freq, GHz
dB
m(V
out_
link)
m4
Optical link
ESYCOM 5 avril 2005 C. R. 26
• Opto amplifier at 30 GHz with InP/GaInAs heterojunction phototransistors (HPT) (Ph D)
Design: ESYCOM with our HPT models Technology: OPTO+ MarcoussisMeasurements: LEST Brest
3 – An example of item: microwave photonics
Circuits for microwave photonic links
ESYCOM 5 avril 2005 C. R. 27
R0
C1
L1
Vce3+
4
CdVbe4
C2
L2
Vce3
Vbe3
Cd
Cd
Rd
T51030PV4E
/4
Vbe1 Cd
C3
L3
Vce1
Vbe2
Cd
Cd
Rd
Optiquemodulée
Microondes30 GHz
m1 freq=31.70GHz dBm(Pout)=-55.096
0.9 10 20 30 40 50
-130
-110
-90
-70
-50
frequency, GHz
Pout (dBm)
m1
Opto amplificateur à 30 GHzen technologie TBH InP OPTO+
ESYCOM 5 avril 2005 C. R. 28
• Broad band distributed preamplifier 0,2 to 20 GHz for photodiode (CNAM memoire)
Design: ESYCOM + Ferdinand Braun Institut für Höchstfrequenztechnik BerlinTechnology: UMS Orsay-Ulm Measurements: ESYCOM
3 – An example of item: microwave photonicsCircuits for microwave photonic links
ESYCOM 5 avril 2005 C. R. 29
• Modulator (up converter) at 30 GHz (Ph D + patent)Design: ESYCOM Technology HFET: UMS Orsay-UlmMeasurement: ESYCOM
3 – An example of item: microwave photonicsCircuits for microwave photonic links
ESYCOM 5 avril 2005 C. R. 30
• Frequency tripler 12,66-38 GHz (Ph D)Design: ESYCOM HFET technology : OMMIC Limeil BrévanneMeasurements: ESYCOM + Agilent Palo Alto
• Chipset for transmitter and receiver of UWB signals (3,6-10,7 GHz) (Ph D)
Design: ESYCOMTechnology: UMS Orsay-UlmMeasurements: ESYCOM + ENSTA Paris
3 – An example of item: microwave photonics
Circuits for microwave photonic links
ESYCOM 5 avril 2005 C. R. 31
Monocycle wavelet generator
PH25NHFF8
G
S
D
PH25NHFF7
G
S
D
PH25NHFF6
G
S
D
PH25NHFF5
G
S
DPH25NHFF4
G
S
D
PH25NHFF3
G
S
D
PH25NHFF2
G
S
D
PH25NHFF1
G
S
D
RR5R=50 Ohm
V_DCSRC35Vdc=Vds2 V
RR6R=50 Ohm
V_DCSRC31Vdc=100 mV
V_DCSRC32Vdc=250 mV
V_DCSRC33Vdc=100 mV
V_DCSRC43Vdc=50 mV
I_DCSRC44Idc=Iee2 mA
I_DCSRC45Idc=Iee1 mA
I_DCSRC20Idc=Iee2 mA
I_DCSRC16Idc=Iee1 mA
VtPulseSRC42
Period=8 nsecWidth=4 nsecFall=0.5 nsecRise=0.5 nsecEdge=linearDelay=2 nsecVhigh=Vi1 VVlow=-Vi1 V
t
PH25NHF_SDDX12
PH25NHF_SDDX10
PH25NHF_SDDX6
PH25NHF_SDDX7
PH25NHF_SDDX5
PH25NHF_SDDX11
PH25NHF_SDDX9
PH25NHF_SDDX8
Generation of monocycle pulses with differential pairs of transistors
ESYCOM 5 avril 2005 C. R. 32
Monocycle generator: input and output signals
-400
-200
0
200
400
-600
600
sig
nal_
carr
e, m
V
m6time=1.997nsecVout=0.107
2 4 6 80 10
-0.10
-0.05
0.00
0.05
0.10
-0.15
0.15
time, nsec
Vout
m6
m1time=1.822nsecVout=-3.527E-4
m2time=2.072nsecVout=-4.175E-4
m3time=1.997nsecVout=0.107
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.51.3 2.6
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
0.10
-0.14
0.12
time, nsec
Vou
t
m1 m2
m3
Rectangular signal applied at the input of the pulse generator
Series of generated monocycle pulses
ESYCOM 5 avril 2005 C. R. 33
Microwave photonic components
• InP/GaInAs heterojunction phototransistor (HPT) (Ph D)Numerical and physical simulations of semiconductordevices in finite differences : ESYCOMMeasuremens: OPTO+ Marcoussis, LEST Brest, ESYCOM
• New concepts (optoelectronic S parameters) for optoelectronic modelling of a HPT: ESYCOM
3 – An example of item: microwave photonics
ESYCOM 5 avril 2005 C. R. 34
Description of InP/GaInAs HPTs
InP/GaInAs HPT realized by OPTO +
C. Gonzalez, “HBT Phototransistor as an Optical Millimeter wave Converter - Part I: the Device”,part 5.3 of a book entitled: “Microwave Photonics: From Components to Applications and Systems”,Edited by Vilcot, Cabon, Chazelas, Kluwer Academic Publishers, The Netherlands, in print – to be published in 2003
Base
Collector
InP Sub- Collector
Emitter
p-InGaAs
n-InGaAs
n-InP
Optical beam
Base
Collector
InP Sub- Collector
Emitter
p-InGaAs
n-InGaAs
n-InPBase
Collector
InP Sub- Collector
Emitter
p-InGaAs
n-InGaAs
n-InP
Optical beam
Window in the base
ESYCOM 5 avril 2005 C. R. 35
Description of InP/GaInAs HPTs
InP/GaInAs HPT realized by OPTO +
Base
Collector
InP Sub-Collector
Emitter
p-InGaAs
n-InGaAs
n-InP
Optical beam
Base
Collector
InP Sub-Collector
Emitter
p-InGaAs
n-InGaAs
n-InPBase
Collector
InP Sub-Collector
Emitter
p-InGaAs
n-InGaAs
n-InP
Optical beam
500nm: N ++ – 1.10 19cm -3
500nm: N – 1.10 16cm -3
50nm: N – 2.10 17cm -3
N++ – 1.10 19cm -3
60nm: P + – 2.10 19cm -3 In0.53Ga 0.47As
InP
InP
In0.53Ga 0.47As
In0.53Ga 0.47As
500nm: N ++ – 1.10 19cm -3
– 16 -
50nm: N – 2.10 17cm -3
N++ – 1.10 19cm -3
60nm: P + – 2.10 19cm -3 In0.53Ga 0.47As
InP
InP
In0.53Ga 0.47As
In0.53Ga 0.47As
Either abrupt(PV4D)
Or gradual(PV4E)
500nm: N 1.1016 cm -3
• Absorption of light in base and collector • Source of photonic current comes mainly from BC depleted zone
ESYCOM 5 avril 2005 C. R. 36
N. Chennafi, 05/07/99 9
Simulation physique (différences finies 2D) de PTH InP/GaInAs
optiquemodulée
ESYCOM 5 avril 2005 C. R. 37
HPT large signal model
E
CB
Popt
POUT
E
Ict
RC
RE
C
Rb1 Rb2B
Icni X.CjCICC
CjE IEni IEC
(1-X).CjC
.Vopt
IAV
IcN
IbN
Vopt
- modulated light- microwave response- noise- thermal behaviour
ESYCOM 5 avril 2005 C. R. 38
• Si/SiGe phototransistor (Ph D) Physical simulation and design: ESYCOM
Technology: Atmel Heilbronn through Université of Ulm Microwave measurements : IEF OrsayOptoelectronic measurements: ESYCOM
• First world result for a Si/SiGe HPT• Comparison with other teams in the world (Germany, France, Israel, Taïwan, USA) in a workshop organised by ESYCOM in Budapest in Sept. 2003 in association with an IEEE Topical Meeting on Microwave Photonics• For a Si/SiGe HPT, a team of the University of Taïwan began with a MQW structure and recently switched to our solution.
Microwave photonic components
3 – An example of item: microwave photonics
ESYCOM 5 avril 2005 C. R. 39
Description of Si/SiGe HPTs
Designed by ESYCOM and Ulm University , realized by Atmel Heilbronn
J.L. Polleux, F. Moutier, A.L. Billabert, C. Rumelhard, E. Sönmez, H. Schumacher, “A Strained SiGe layer Heterojunction Bipolar Phototransistor for Short-Range Opto-Microwave Applications”, IEEE International Topical Meeting on Microwave Photonics, MWP2003, Budapest, Hungary, Sept. 2003
10µm10µm10µm
Base
Emitter
n-Si
Collector
Si Sub- Collector
p-SiGe
n-Si
Emitter
Ge %
Optical beam
Base
Emitter
n-Si
Collector
Si Sub- Collector
p-SiGe
n-Si
Emitter
Ge %
Base
Emitter
n-Si
Collector
Si Sub- Collector
p-SiGe
n-Si
Emitter
Base
Emitter
n-Si
Collector
Si Sub- Collector
p-SiGe
n-Si
Emitter
Ge %
Optical beam
Window in the emitter
ESYCOM 5 avril 2005 C. R. 40
Description Si/SiGe HPTs
Designed by ESYCOM and Ulm University , realized by Atmel Heilbronn
Absorption of light in base + a small part of emitter and collector (SiGe)but also in emitter and collector (Si)
Base
Emitter
n-Si
Collector
Si Sub-Collector
p-SiGe
n-Si
Emitter
Ge %
Optical beam
N++ – 2.1020cm-3
N++ – 2.1020cm-3
30nm: P+ – 2.1019cm-3
SiGe, 22%
Si
Si
20nm
10nm
100nm: N – 3.1018cm-3
300nm: N – 4.1016cm-3
ESYCOM 5 avril 2005 C. R. 41
108
109
1010
-20
-15
-10
-5
0
5
10
15
20
GO
M o
r r H
PT
in d
B
20
15
10
5
0
- 5
- 10
- 15
- 20 0.1 1 10 F in GHz
InP @ 0.94 µm ESYCOM
InP @ 1.55 µm LEST Brest
SiGe @ 0.94 µm ESYCOM
Physical simulation SiGe @ 0.85 µm
Opto-microwave gains with 50 ohms on bases and collectors
Measurements of GOM with InP and SiGe HPTs
ESYCOM 5 avril 2005 C. R. 42
• Improving the frequency response of Si/SiGe PTH by a focalisation of optical absorption in the base by optimisation of optical wavelength (Ph D)
Physical simulations : ESYCOMFuture technology : Atmel Heilbronn through University of Ulm
Microwave photonic components
3 – An example of item: microwave photonics
ESYCOM 5 avril 2005 C. R. 43
Amélioration de la fréquence de coupure optique FTOPT d’un PTHen n’éclairant que la base
FTOPT
FTOPT
ESYCOM 5 avril 2005 C. R. 44
Amélioration de la fréquence de coupure optique FTOPT d’un PTHen fonction de la longueur d’onde optique
ESYCOM 5 avril 2005 C. R. 45
• Improving the responsivity of a Si/SiGe by insertion in a horizontal
optical cavity constituted of adjustable Bragg reflectors (Ph D)
Optimisation of the number of blades of the Bragg reflector to
improve absorption: ESYCOM
MEMS Si technology for Bragg reflectors: ESYCOM
Microwave photonic components
3 – An example of item: microwave photonics
ESYCOM 5 avril 2005 C. R. 46
Bragg reflector Si/air
SiO2/air Si/Ge
Si/air Si
Lateral cavity system
• Vertical Bragg reflectors, DRIE on Si substrate Structure realized in ESYCOM/ESIEE
• Lateral cavity with insertion of a photodiode
• Lateral cavity with insertion of aSiGe phototransistor
ESYCOM 5 avril 2005 C. R. 47
- Structure 3: 1st refl. 3b, 2nd refl. 13 is interesting
Si slab thickness (µm)
0 5 10 15 20 25 300
10
20
30
40
50
60
70
80
90
100
1st refl 1b. 2 b. 3 b. 4 b. 5 b. 6 b.
6
5
4
3
Slab thickness (µm)
Ma
x. A
bso
rptio
n
Lateral cavity system: optimal structures
• The maximum absorption of each structure
ESYCOM 5 avril 2005 C. R. 48
3 – An example of item: microwave photonics
Microwave photonic components
• Study of a phase shifter constituted of two coupled optical cavitiesrealized with Bragg reflectors (Ph D)
Design of adjustable micro-photonic circuit: ESYCOM + IEF OrsayFuture realization with a MEMS technology on Si: ESYCOM
ESYCOM 5 avril 2005 C. R. 49
Variable phase shifter with a double Braggreflector double cavity Technology MEMS ESYCOM
Wrib
Light in
Light out
Substrat : Si
SiO2
Coupled double cavity
ESYCOM 5 avril 2005 C. R. 50
1542 1543 1544 1545 1546 1547 1548 1549 1550 1551 1552 1553 1554 1555 1556 1557 1558 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9
-8 -7 -6 -5 -4 -3 -2 -1 0
Longueur d'onde (nm)
Tra
nsm
ittan
ce (
dB)
avant déplacement DBR après déplacement DBR
CAVITY PHASE SHIFTER WITH BRAGG REFLECTORSApplication: Mach Zehnder modulator in micro-photonic circuit
1542 1543 1544 1545 1546 1547 1548 1549 1550 1551 1552 1553 1554 1555 1556 1557 1558 -100
-50
0
50
100
150
200
250
300
X: 1550 Y: 23.29
Longueur d'onde (nm)
Tra
nsm
ittan
ce-P
hase
en
degr
ès
X: 1550 Y: 146.5
avant déplacement DBR aprés déplacement DBR
123ΔΨ
ESYCOM 5 avril 2005 C. R. 51
y
z
x
Double cavité à réseau de Bragg
Vue 3D de la double cavité ( Vue plan yz)
H1
x
W
hn1
n0
y
n2
2iOSiS
10m
x
Vue en coupe de la double cavité ( Vue plan yx)
Vue en coupe de double cavité ( Vue plan yz)
SiO2
Substrat : Sii
y
Air
aird
dcav dcav Hh z
Sid
si
BSi n
dD
VIEW OF THE STRUCTURE
ESYCOM 5 avril 2005 C. R. 52
4 – Synthesis and prospects
Microwave photonic item:• First realization of a Si/SiGe microwave HPT• Necessity to have an access to different technologies: Atmel Ulm, OPTO+ Marcoussis, OMMIC Limeil Brévanne, UMS Orsay-Ulm• Direct acces to ESIEE MEMS Si technology for micro-photonic circuits• Measurements realized in Brest, Orsay, Marne la Vallée and Paris
ESYCOM:• Many contacts with other items of ESYCOM• Also contacts with other microwave photonics teams in Paris (Paris VI)