KAUST-UCSB-NSF Workshop on Solid-State Lighting

February 13-14, 2012

King Abdullah University of Science & Technology Thuwal, Saudi Arabia 

Sponsors: King Abdullah University of Science & Technology (KAUST), KSA University of California, Santa Barbara (UCSB), USA National Science Foundation (NSF)1, USA Objective:

The objective of the workshop is to provide a forum for interaction between the leading scientists who are at the cutting edge of energy-saving solid-state lighting, and the faculty at KAUST and other institutions in the Kingdom of Saudi Arabia. Workshop Summary:

Lighting consumes over 20% of all electricity produced which corresponds to over 25 Quads of primary fuel (with an associated 410 million tons of carbon emissions), at an annual cost of ~$300 billion. Conventional lighting sources include incandescent lamps and fluorescent lamps, which are rather inefficient at converting electricity to light, i.e., 2-4% (7-15 lumens/watt (lm/W)) for incandescent, and 15-20% (50-80 lm/W) for fluorescent. In the U.S. alone, it is estimated that over $120 billion in energy savings could be realized by 2020 if an efficiency target of 200 lumens per watt can be achieved. This will also enable a significant reduction in the generation of green house gases. Solid-state lighting (SSL), in the form of light emitting diodes (LEDs), with a theoretical limit of ~ 300 lm/W, has the ability to meet this target.

This joint workshop seeks to address the problem of lighting efficiency by

focusing research efforts in key areas of materials and technology for solid-state lighting. It is expected that solid-state lighting could achieve 80% energy efficiency, with a corresponding luminous efficacy of close to 300 lumens/watt, and it will be able to run entirely off sustainable energy sources such as either solar or wind. Solid-state lighting sources, in addition, offer nearly an infinite field lifetime (e.g., 25-50 years). The outcome of this workshop, and the proposed research, will be directed towards the science of LEDs based on GaN, the light of our future, the ultimate lighting source that will eventually replace all existing lighting technologies.

The 2-day workshop will address various topics including full-spectrum LEDs,

wide-bandgap material growth technologies, GaN and ZnO nanostructures (quantum-dot, nanorods and nanowires) as active material for full spectrum LEDs, defect-free bulk GaN crystals as substrates, and light extraction. On the last half day of the workshop, participants will be asked to propose directions for research and a working relation with KAUST’s faculty and faculty within the KSA and region that will lead to a joint research program that can compete as equals with other top groups in the world.

1The workshop is supported in part by NSF through Award OISE-1032576

Workshop Day 1 February 13, 2012 Exhibition Hall 1 – RM 3914, Building 19 08:00-08:30 Breakfast Session I Chair: Boon S. Ooi (KAUST) 08:30-08:40 Welcome Address

President Choon Fong Shih (KAUST) 08:40-08:50 Greeting Message

Chancellor Henry T. Yang (UCSB) 08:50-09:35 Keynote: Research Vision, Research Capability, and

Collaboration Structure of KACST Turki Saud Mohammad Al Saud (KACST)

09:35-10:20 Keynote: Overview of History and Developments of Blue,

Green & White LEDs and Laser Diodes Shuji Nakamura (UCSB)

10:20:10:40 Coffee Break 10:40:11:10 Site Isolation of Chromophores: an Academic Approach to

White Light Emitting Diodes Jean M.J. Fréchet (KAUST)

11:10-11:40 New Nitride Materials and Devices for Ultimate Efficiency Light

Source and Energy Converters James S. Speck (UCSB)

11:40-12:10 Semiconductor Nanostructures for Energy Efficient

Optoelectronic Device Applications Boon S. Ooi (KAUST)

12:10-13:10 Lunch Break Session II Chair: James S. Speck (UCSB) 13:10-13:55 Nanostructures in LEDs for Solid State Lighting P. Daniel Dapkus (USC) 13:55-14:15 Understanding and Controlling Nanoparticle Size and Density

Distributions with Ultracentrifugation: Towards Their Assembly into Optoelectronic Devices Osman Bakr (KAUST)

14:15-14:45 Nanocrystal Optoelectronics for High Quality Semiconductor Lighting Hilmi Volkan Demir (NTU and Bilkent)

14:45-15:00 Ammonothermal Growth of GaN

Siddha Pimputkar (UCSB) 15:00-15:15 Coffee Break 15:15-16:00 Vertical and Lateral Electronic Device in Gallium Nitride for

Power Electronics Applications Umesh Mishra (UCSB)

16:00-16:20 Investigating Wide Bandgap Materials (Nitride and Oxide):

Achieved Results and Potential Experiments Hamad Abdulaziz Hamad Albrithen (KSU)

16:20-16:40 InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction

Solar Cell Applications Robert Farrell (UCSB)

16:40-17:00 Investigation of Longitudinal Phonon Activity, Spectral Red

Shift and Intense Sub-band Emission in Pure and Silver Doped CdS Quantum Dots M.A. Gondal (KFUPM)

17:00:18:00 Poster Session 18:00-18:30 Break 18:30 onward

Banquet

Workshop Day 2 February 14, 2012 Exhibition Hall 1 – RM 3914, Building 19 08:00-08:30 Breakfast Session III Chair: Ghassan Jabbour (KAUST) 08:30-09:15 Keynote: Energy Savings Potential of LEDs for Energy

Efficient Lighting and Future Research Direction in LEDs Steven P. DenBaars (UCSB)

09:15-09:35 Development and Status of Nonpolar/Semipolar III-Nitride

Light-Emitting Diodes Daniel F. Feezell (UCSB)

09:35:10:05 Engineering Nanostructures in Active Regions and Device

Configurations for High Efficiency Solid State Lighting Nelson Tansu (Lehigh)

10:05-10:20 Coffee Break 10:20-11:05 Application of DERI Method to Thick InGaN and InN/InGaN

MQW Structure Growth Yasushi Nanishi (Ritsumeikan)

11:05-11:35 Exploiting Polarization in III-Nitride Optoelectronics: Not

Always an Enemy Debdeep Jena (Notre Dame)

11:35-11:55 Study Wide Band Semiconductor for Visible Optoelectronic

Devices and a New Generation of Spin LEDs Iman Roqan (KAUST)

11:55-12:10 Progress in Growth, Characterization and Device Performance

for Nonpolar and Semipolar GaN-based Laser Diodes Kathryn M. Kelchner (UCSB)

12:10-13:10 Lunch Break Session IV Chair: Omar Abdulhamid (ARAMCO) 13:10-13:55 LED Luminaires: Are They Ready to Compete with Traditional

Light Source Luminaires in Illumination Applications? Nadarajah Narendran (RPI)

13:55-14:25 Polymer LEDs for Solid-State Lighting

Ghassan Jabbour (KAUST)

14:25-14:55 Growing ZnO in Water

Gregory K.L. Goh (IMRE) 14:55-15:15 Nanomaterial and Device Modeling and Simulation

Mohammad Alsunaidi (KFUPM) 15:15-15:35 Light Harvesting: Making Energy from Chaos

Andrea Fratalocchi (KAUST)

15:35-15:50 Coffee Break 15:50-17:00 Panel Discussion and Plan for Future Interaction Panel Chair: Boon S. Ooi (KAUST) Members: Ahmad Khowaiter (Aramco) Shuji Nakamura (UCSB) Ghassan Jabbour (KAUST) Steve DenBaars (UCSB) 17:00-18:00 Break 18:00-onward

Dinner at KAUST Diner

President Choon Fong Shih, King Abdullah University of Science and Technology (KAUST)

Welcome Address from President Shih of KAUST

King Abdullah University of Science and Technology Thuwal, 23955-6900, Kingdom of Saudi Arabia

Email: shih@kaust.edu.sa Biography: Professor Choon Fong Shih took up the appointment of Founding President of King Abdullah University of Science and Technology (KAUST) in December 2008. He is also a Professor of Mechanical Engineering at KAUST.

An internationally recognized researcher and academic leader, President Shih joined KAUST after nine years as President and Vice-Chancellor of the National University of Singapore (NUS). In this capacity, he led NUS’ transformation to a highly regarded research university embracing an entrepreneurial dimension. He promoted the university's global profile and reach, building research and educational partnerships with premier institutions around the world.

President Shih was a key driver for the formation of the International Alliance of Research Universities, an alliance of 10 of the world's leading research universities spanning four continents. He was Chairman from 2002-2006 and Chairman Emeritus from 2006-2010 of the Association of Pacific Rim Universities (APRU), a consortium of 37 leading research universities modeled after the premier Association of American Universities.

As a researcher, President Shih has made significant contributions in nonlinear fracture mechanics and computational methods for fracture analyses. With about 150 publications in leading scientific journals, President Shih is listed by the Institute for Scientific Information (ISI) as among the world's highly cited engineering researchers. Among his honors are the George Irwin Medal and the Ted Belytschko Applied Mechanics Award, from the American Society for Testing and Materials, and the American Society for Mechanical Engineers, respectively.

President Shih is a foreign associate of the U.S. National Academy of Engineering and a foreign honorary member of the American Academy of Arts and Sciences. He was the inaugural recipient from Asia Pacific for the 2007 Chief Executive Leadership Award presented by the Council for Advancement and Support for Education. He has been awarded the French decoration "Chevalier" in the Order of the "Legion d'Honneur" as well as conferred honorary Doctor of Science degrees from Loughborough University in the United Kingdom, Waseda University in Japan, and Brown University in the United States.

President Shih has also served on a number of national-level committees in Singapore. He was the chairman of the Singapore-MIT Alliance Governing Board, an executive committee member of the Economic Development Board, as well as served on the Economic Review Committee tasked by the Prime Minister to develop wide-ranging strategies for the further growth and development of Singapore’s economy. President Shih was also a board member of the National Research Foundation.

Chancellor Henry T. Yang, University of California, Santa Barbara

Greetings from Chancellor Yang of UC Santa Barbara

University of California, Santa Barbara, CA 93106, USA Email: henry.yang@chancellor.ucsb.edu

Abstract: Chancellor Henry T. Yang will help open the workshop with welcoming remarks on behalf of the University of California, Santa Barbara. He will provide a brief overview of UC Santa Barbara, and discuss the university's commitment to fostering a highly collaborative (university/industry/government/international partnership) and interdisciplinary research environment, as exemplified by the Solid State Lighting and Energy Center. He will also share UC Santa Barbara's perspective on the opportunities for research cooperation and collaboration between UC Santa Barbara, KAUST, and all participating institutions, with the sponsorship of the U.S. National Science Foundation. Biography: Henry T. Yang has served as the chancellor of the University of California, Santa Barbara since 1994. He is also a professor of mechanical engineering, and teaches an undergraduate engineering course in finite element structural analysis each year. He was formerly the Neil A. Armstrong Distinguished Professor of Aeronautics and Astronautics at Purdue University, where he also served as the dean of engineering for ten years. Dr. Yang is a member of the U.S. National Academy of Engineering, and a Fellow of AIAA, ASME, and ASEE. He has authored or co-authored more than 175 articles for scientific journals, as well as a widely used textbook on finite element structural analysis. He is a popular teacher and graduate advisor who has guided 54 Ph.D. students and has won thirteen best teaching awards in the course of his career, including a 2007 honorary distinguished teaching award from UC Santa Barbara’s Academic Senate. He has received a number of other recognitions for his research, teaching, and public service, including seven honorary doctorates, the ASEE Benjamin Garver Lamme Award, and the 2008 AIAA Structures, Structural Dynamics, and Materials Award. Dr. Yang has served on scientific advisory boards for various government agencies. He currently chairs the Association of Pacific Rim Universities, and is a past chair of the Association of American Universities. He also serves on the President’s Committee for the National Medal of Science and the Kavli Foundation board, and is chairman of the board for the Thirty Meter Telescope project. In 2011 he joined the International Advisory Council for President Shih of KAUST.

Turki Saud Mohammad Al Saud, Vice President for Research Institutes, King Abdulaziz City for Science and Technology (KACST)

Research Vision, Research Capability, and Collaboration Structure of KACST

King Abdulaziz City for Science and Technology Riyadh 11442, Kingdom of Saudi Arabia

Email: talsaud@kacst.edu.sa Abstract: The presentation is an outline of the Science and Technology Policy for the Kingdom and the 20 years National Science, Technology, and Innovation Plan (NSTIP). It describes major programs for the NSTIP with emphases on the strategic technologies program. It indicates the process of stakeholder’s participation and their determination of research priorities, with examples for the communication, electronics, and photonics. The structure of university research evaluation and funding is shown. Finally, it gives examples of KACST applied research and collaborations showing products relating to Solid State Lighting. Biography: Dr. Turki bin Saud received his Ph.D. in Aeronautics and Astronautics from Stanford University, and joined King Abdulaziz City for Science and Technology (KACST) in 1997. Soon after joining KACST he became the director of the newly established Space Research Institute. In 2004, Dr. Turki became the Vice President for Research Institutes at KACST. He is Chairman of the Supervisory Committee of the National Science and Technology Plan and Chairman of the Supervisory Committee of King Abdullah Initiative for Solar Water Desalination. He is a member of the Advisory Council for the School of Engineering at Stanford University.

Shuji Nakamura, Professor of Materials, Co-Director of the Solid-State Lighting & Energy Center University of California, Santa Barbara Overview of History and Developments of Blue, Green

& White LEDs and Laser Diodes

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: shuji@engineering.ucsb.edu Abstract: The overview of history of developments of nitride-based blue, green and white LEDs and laser diodes are described. The historical key technological problems to make LEDs and laser diodes were how to make a high quality GaN, how to make p-type GaN, what the hole compensation mechanism was and how to make high quality InGaN layer for an emitting layer of LEDs and laser diodes. All of these problems were solved in 1990-1996. Also, current performance of LEDs and laser diodes are mentioned including the application of those devices. Biography: Shuji Nakamura was born on May 22, 1954 in Ehime, Japan. He obtained B.E., M.S., and Ph.D. degrees in Electrical Engineering from the University of Tokushima, Japan in 1977, 1979, and 1994, respectively. He joined Nichia Chemical Industries Ltd in 1979. In 1988, he spent a year at the University of Florida as a visiting research associate. In 1989 he started the research of blue LEDs using group-III nitride materials. In 1993 and 1995 he developed the first group-III nitride-based blue/green LEDs. He also developed the first group-III nitride-based violet laser diodes (LDs) in 1995. He has received a number of awards, including: the Nishina Memorial Award (1996), MRS Medal Award (1997), IEEE Jack A. Morton Award, the British Rank Prize (1998) and Benjamin Franklin Medal Award (2002). He was elected as the member of the US National Academy of Engineering (NAE) in 2003. He received the Finnish Millennium Technology Prize in 2006. In 2008, he also received the price of Asturias Award from Spain. He received the Harvey Prize of Israel Institute of Technology in 2010. Since 2000, he is a professor of Materials Department of University of California Santa Barbara. He holds more than 100 patents and has published more than 400 papers in this field.

Jean M.J. Fréchet, Vice President for Research, King Abdullah University of Science and Technology (KAUST) Site Isolation of Chromophores: an Academic Approach to

White Light Emitting Diodes

King Abdullah University of Science and Technology Thuwal, 23955-6900, Kingdom of Saudi Arabia

Email: jean.frechet@kaust.edu.sa Abstract: After a brief introduction to work being done at KAUST in the broad area of energy, a short presentation of our work with the design of organic light emitting diodes based on the site isolation of chromophores in a single polymer layer will be made. While most commercial light emitting diodes available today are based on inorganic materials, organic polymers or blends of polymers and small molecules are also attractive for the conversion of light into energy, or energy into light. Therefore, site isolation of light emitting chromophores within block copolymers or discrete organic nanoparticles may be used to create organic white light emitting diodes based on a single multichromophoric organic layer. Similarly, light absorbing conjugated macromolecules may be designed for application in photovoltaics. In this instance, molecules capable of transporting electrons must be combined with hole transporting molecules in blends for which the required critical control of phase morphology is achieved through molecular design. Biography: Professor Fréchet is Vice-President for Research at King Abdullah University of Science and Technology. A Member of the US National Academy of Science and the US National Academy of Engineering, he is the author of about 900 research publications with over 50,000 citations (H index 116) and the recipient of over 70 US patents. His research at the interface of organic and polymer chemistry is in the broad area of nanoscience and nanotechnology, and is directed toward functional macromolecules, their design, synthesis, and applications.

James S. Speck, Professor of Materials, Director of Interdisciplinary Center for Wide Bandgap Semiconductor, University of California, Santa Barbara

New Nitride Materials and Devices for Ultimate Efficiency Light Sources and Energy Converters 

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: speck@mrl.ucsb.edu Abstract: In this talk we provide an overview of a new class of nitrides, namely those grown in semipolar and nonpolar orientations, and describe their potential as the ultimate solutions for high current density, high temperature sources for solid state lighting. For this paradigm shift in solid state lighting, major progress is still required in bulk GaN materials. Additionally, we survey energy generation from nitride solar cells. Biography: James S. Speck is a Professor in the Materials Department at the University of California Santa Barbara. He received his B.S.M.E. degree in metallurgical engineering from the University of Michigan in 1983 and his S.M. and Sc.D. in materials science from the Massachusetts Institute of Technology in 1985 and 1989, respectively. At UCSB, his early work focused on epitaxial oxide films on semiconductors, ferroelectric thin films, and strain relaxation in highly misfitting epitaxial systems. He has worked extensively on the materials science of GaN and related alloys. Major aspects of his work on nitrides include elucidating basic growth modes and defect generation, the development of MBE growth of GaN, and the development of nonpolar and semipolar GaN. Speck received the Quantum Device Award (with Umesh Mishra) from the International Symposium on Compound Semiconductors in 2007, he was named an inaugural MRS Fellow in 2008, and received the JJAP Best Paper Award in 2008. In 2009 he received became an APS Fellow. In 2010 he received the IEEE Photonics Society Aron Kressel Award (with Steve DenBaars) for his work on nonpolar and semipolar GaN-based materials and devices. Speck served as the Chair of the UCSB Materials Department from 2005-2011. Speck has over 550 publications in the referred archival literature.

Boon S. Ooi, Professor of Electrical Engineering King Abdullah University of Science and Technology (KAUST)

Semiconductor Nanostructures for Energy Efficient Optoelectronic Device Applications

Physical Sciences & Engineering Division King Abdullah University of Science and Technology

Thuwal, 23955-6900, Kingdom of Saudi Arabia Email: boon.ooi@kaust.edu.sa

Abstract: In this talk we will give a brief overview of recent research activities in Photonics Laboratory in KAUST. We will focus our discussion on the generation of broadband lasing action in III-V quantum-dot/dash nanostructures that can find important applications in energy efficient computer and communication systems. Our recent progress on porous GaN, and GaN nanowires and nanorods fabricated using a novel UV-assisted electro-less etching technique will also be discussed. Biography: Boon S. Ooi received the B.Eng. and Ph.D. degrees in electronics and electrical engineering from the University of Glasgow (U.K.) in 1992 and 1994, respectively. He served as a faculty member in Nanyang Technological University (Singapore) and Lehigh University (U.S.A.) before joining KAUST as a Professor of Electrical Engineering in 2009. His research interests include the development of semiconductor photonics integrated circuits and light emitting devices. He is a Fellow of the SPIE and the Institute of Physics (U.K.).

P. Daniel (Dan) Dapkus, Distinguished Professor, W. M. Keck Professor of Engineering, University of Southern California

Nanostructures in LEDs for Solid State Lighting1

Center for Energy Nanoscience and Technology Ming Hsieh Department of Electrical Engineering

University of Southern California, Los Angeles, CA 90089, USA Email: dapkus@usc.edu

Abstract: Semiconductor nanostructures have the potential to make a positive impact on the efficiency and cost of solid state energy devices such as solar cells and light emitting diodes. In this talk I will explore the use of semiconductor nanostructures for high efficiency blue emitting LEDs. Nanostructures can positively impact the cost and efficiency of GaN based LEDs by altering the strain and piezoelectric fields that occur in InGaN/GaN LED structures, by eliminating dislocations from the device and by enabling the use of low cost substrates for the fabrication of LEDs. This talk will focus on creating nonpolar facets in nanostructures upon which quantum well active regions can be grown. Using selective area growth, vertical nanorods and nanosheets of GaN are formed on Al2O3 substrates that are bounded by nonpolar {10-10} facets. Quantum wells grown on these facets do not experience the strong piezoelectric fields that distort wells grown on polar planes and that force the use of very thin quantum well active regions to retain the inherent efficiency of radiative recombination. Detailed growth studies elucidate the mechanisms that control the formation of the nonpolar planes on the nanostructures. We will demonstrate the growth of QWs on these nanostructures under conditions in which the dominant emission from the active area arises from the nonpolar planes of the structure. TEM investigations and cathodoluminescence characterization clearly identify the properties of the emitting planes and quantum wells grown on them. The geometry of these planes also enable the formation of three dimensional nonpolar active regions in which the active area of the device greatly exceeds the chip area, thus mitigating the reduction of efficiency that occurs at high drive currents in LEDs. 1 This work was supported in part by NSF through Award ECS-0507270 and by the Center for Energy Nanoscience, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Basic Energy Sciences under Award Number DE-SC0001013. Biography: Professor Dapkus is a Distinguished Professor, the William M. Keck Professor of Engineering and the Director of the Center for Energy Nanoscience at USC. His research group has been active in the development of photonic materials and devices for the past 30 years. Prior to coming to USC, Professor Dapkus was a member of technical staff at Bell Laboratories where he worked on visible light emitting diodes. He then led the group at Rockwell International responsible for the demonstration of the viability of MOCVD as a device epitaxy process. MOCVD is now the most widely used process for the research and manufacture of photonic materials and devices. His current research involves the exploitation of novel materials and devices for energy-related applications. Over his career at USC, Professor Dapkus' research has focused on the invention and demonstration of novel and high performance photonic devices. His group made important contributions to the physics and technology of 1.55 micron lasers for fiber optic technology, ultralow threshold edge emitting lasers, vertical cavity surface emitting lasers and active resonator devices. Professor Dapkus is a Member of the National Academy of Engineering and has been awarded several honors for his work including the Heinrich Welker Medal of the ISCS in 2009, the OSA Nick Holonyak, Jr Award in 2005, the IEEE David Sarnoff Award in 2001 and the IEEE LEOS Engineering Achievement Award in 1995. He was also selected as an IEEE LEOS Distinguished Lecturer and awarded the USC Associates Award for Creativity in Research and the Lockheed Senior Research Award. He is a Fellow of IEEE, OSA, APs and AAAS.

Osman Bakr, Assistant Professor of Materials Science and Engineering King Abdullah University of Science and Technology (KAUST)

Understanding and Controlling Nanoparticle Size and Density Distributions with Ultracentrifugation: Towards

Their Assembly into Optoelectronics Devices

Physical Sciences & Engineering Division King Abdullah University of Science and Technology

Thuwal, 23955-6900, Kingdom of Saudi Arabia Email: osman.bakr@kaust.edu.sa

Abstract: Nanoparticles (NPs) are finding many research and industrial applications, yet their characterization remains a challenge. Arguably, NP characterization and polydispersity have become rate-limiting steps, hindering the development and prospective uses of these promising materials. NPs’ cores - often polydisperse - are coated by a stabilizing shell – generally varying in size and composition. No single technique can characterize both the size distribution and the nature of the shell. Recent advances in sedimentation velocity analytical ultracentrifugation (SV-AUC) allow for the extraction of the sedimentation (s) and diffusion coefficients (D), and the relative concentration of the species present in solution during an experiment. Here we show a novel approach to transform the s and D distributions for NPs in solution into precise molecular weight (M), density (ρP), and particle diameter (dp) distributions. Studying samples of varying polydispersity and heterogeneity, and in various solvents, we demonstrate the ability to obtain M, ρP, and dp distributions on NP samples of various sizes with unparalleled accuracy, achieving density information that would not be achievable otherwise, particularly for particles <10 nm. A single experimental SV-AUC run is sufficient for full NP characterization, without the need for standards or other auxiliary measurements. We provide a simple rule to estimate the exact particle composition. NPs are rarely synthesized monodisperse or homogenous. We show how our SV-AUC analysis can be coupled to preparative ultracentrifugation, to eliminate heterogeneities and obtain extremely monodisperse NP fractions from an initially polydisperse sample. The talk will conclude with a brief discussion of the exciting possibilities this methodology opens to the self-assembly and integration of new types of quantum dots and plasmonic NPs in photonic and optoelectronic devices Biography: Osman Bakr, Assistant Professor of Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST). Osman Bakr holds a B.Sc. in Materials Science and Engineering from MIT (2003) as well as a M.S. and Ph.D. in Applied Physics from Harvard University (2009). He completed his doctoral training in the Supramolecular Nanomaterials Group of Francesco Stellacci at MIT. He then spent a year as a post-doctoral fellow in the Laboratory for Nanoscale Optics of Marko Loncar at Harvard University. Bakr’s research focus includes the synthesis, size-separation, and assembly of organic and organic-inorganic hybrid nanomaterials of novel optical, electronic and magnetic properties for solar cells, photonic and optoelectronic devices.

Hilmi Volkan Demir, Associate Professor of Electrical & Electronic Engineering, Nanyang Technological University and Bilkent University

Nanocrystal Optoelectronics for High-Quality Semiconductor Lighting 

Division of Microelectronics, College of Engineering Nanyang Technology University, Singapore 639798, Singapore

& Department of Electrical and Electronics Engineering Bilkent University, Bilkent, Ankara TR-06800 Turkey Email: HVDEMIR@ntu.edu.sg, volkan@bilkent.edu.tr

Abstract: To combat environmental issues escalating with the increasing carbon footprint, combined with the energy problem of limited resources, innovating fundamentally new ways of raising energy efficiency is essential to our energy future. Today achieving lighting efficiency is an important key because artificial lighting consumes about 19% of total energy generation around the globe. There is a large room for improving energy utilization of lighting for potential emission reduction. However, the scientific challenge is to reach simultaneously high-quality photometric performance. To address these and related problems, we develop and demonstrate new classes of color-conversion LEDs integrating nanophosphors of semiconductor quantum dots for high-photometric quality and those enhanced using excitonics (controlling exciton-exciton interactions) through Förster-type nonradiative energy transfer (NRET). We study intrinsic performance limits and fundamental photometric tradeoffs of such narrow-emitter nanophosphors investigating a large scale (>200M) of designs. We showed that it is possible to achieve high levels of photometric performance with a luminous efficacy of optical radiation >380 lm/Wopt and a color-rendering index >90 in the warm-white region, important for spectrally high-efficiency, high-quality lighting. We work on new integration strategies of these nanophosphor quantum dots and also those on LEDs using smart peptide linkers. Biography: Professor Hilmi Volkan Demir is an NRF Fellow of Singapore and Nanyang Associate Professor at NTU Singapore, and serves as the Founding Director of LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays. Concurrently, he is EURYI Associate Professor at Bilkent University and UNAM – National Nanotechnology Research Center of Turkey. Demir earned his PhD (2004) and MSc (2000) degrees from Stanford University, CA, and his BSc (1998) degree from Bilkent Univ. (one of the top ranking science and engineering schools in Turkey). His current research interests include the science and technology of nanocrystal optoelectronics for semiconductor lighting, excitonics for high-efficiency light generation and harvesting, wireless bioimplant in vivo sensing and medical devices for future healthcare. Demir has contributed to commercialization and licensing of several new enabling technologies as well as establishing a successful nanotechnology startup company (in Turkey/France) and led to >15 patent applications, several of which have currently been used, owned or licensed by industry, and to several important international and national awards including European Science Foundation European Young Investigator Award, TUBITAK Scientific and Technological Research Council of Turkey Young Investigator TESVIK Award. He is the PI of Singapore NRF Competitive Research Program on future LED lighting. Demir co-authored over 90 SCI papers and delivered over 150 invited seminars on the topics of solid state lighting, nanophotonics, and nanoparticles research in industry and academia.

Siddha Pimputkar, University of California, Santa Barbara

Ammonothermal Growth of GaN

Materials Department Solid State Lighting and Energy Center

University of California, Santa Barbara, CA 93106, USA Email: siddha.pimputkar@gmail.com

Abstract: High-quality, large, single crystal GaN substrates are needed to improve on optoelectronic (LASERs, LEDs, solar cells, etc.) and electronic (HEMTs, power switches, etc.) group-III nitride devices currently grown on foreign substrates. Due to significant material challenges, GaN cannot be grown from melt like silicon (Czochralski crystal growth) but an alternative method must be found. Ammonothermal growth of GaN, similar to the industrial established hydrothermal growth of quartz and ZnO, is a promising solution. Current challenges include improving growth rates, reducing impurity concentrations, and improving optical transparency. UCSB has made considerable progress in improving growth rates up to 344 µm/day for the cumulative c-plane growth rate along [0001] and [0001] while reducing the absorption coefficient α to 3.5 – 5 cm-1 for wavelengths between 450 nm – 500nm and reducing transition metal impurities to < 1E17 atoms/cm-3. A brief introduction of the ammonothermal method will be provided along with recent technological progress and scientific understanding of GaN growth using this method. Biography: Siddha Pimputkar, currently a Ph.D. student in Material Science and Engineering Department at the University of California – Santa Barbara, is pursuing his dream of growing large bulk GaN crystals using the ammonothermal method. During his tenure as a Ph.D. student, he has also performed research on the generation of hydrogen by splitting water using GaN and sunlight and investigated the use of Cerium doped Terbium Aluminum Garnets (TAG:Ce) as a potential γ-ray scintillator to detected radioactive materials at the Lawrence Livermore National Laboratory. He received his B.S. at the Illinois Institute of Technology in Mechanical Engineering with a Materials minor. During his undergraduate years he pursued research in the field of fluid dynamics and investigated the dispersion of contaminants in an urban environment using stereo Particle Image Velocimetry (PIV). Additionally, he was a member and captain of the varsity swim team and competed at the national championship during each of the four year. Siddha has received a few awards and fellowships, including the NSF Graduate Research Fellowship, the DHS Graduate Fellowship, the NASA Space Grant Scholarship, the Victor Morgenstern Scholarship, the Heald Scholarship, an IIT Athletic Scholarship and multiple All American Scholar-Athlete titles.

Umesh Mishra, Professor of Electrical Engineering, University of California, Santa Barbara

Vertical and Lateral Electronic Devices in Gallium Nitride for Power Electronics Applications

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: mishra@ece.ucsb.edu Abstract: In this talk the emergence of new generation of power conversion using GaN-based power electronics will be described. GaN is the best semiconductor in the world for power conversion and is now being commercialized. Results based on GaN grown on both Silicon Carbide and on GaN substrates will be presented. The promise of even the first generation of the technology will help us understand the vast possibilities and the need for both academic and industrial efforts in the coming decades.

Biography: Professor Mishra joined ECE Department at the University of California, Santa Barbara in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His research has always been based on extending novel materials into useful devices. He received the IEEE David Sarnoff Award for the “Development of Gallium Nitride-based Electronics” and is a Member of the National Academy of Engineering. He has co-founded two companies, Nitres that was the first start-up in the world in GaN LEDs and microwave transistors and Transphorm, which focuses on the development of GaN-based devices for power conversion applications and has launched the world’s first qualified GaN-based power devices in the market. He has over 650 publications and has graduated over 45 PhD students.

Hamad Abdulaziz Hamad Albrithen, Assistant Professor, Physics & Astronomy, King Saud University Investigating Wide Band Gap Materials (Nitride and Oxide): 

Achieved Results and Potential Experiments

Department of Physics and Astronomy Materials and Surface Physics

King Saud University, Riyadh 11451, Kingdom of Saudi Arabia Email: brithen@ksu.edu.sa

Abstract: We have investigated a family of nitride semiconductors grown mainly by radio frequency molecular beam epitaxy (rf MBE). Scandium nitride thin film has been deposited on MgO(001) at T~ 800 oC. The film layering follows the orientation of the substrate, showing epitaxial growth. ScN study shows that it has rock-salt structure with a direct gap of 2.15 eV and a fundamental indirect gap of 1 eV. The surface structure of the material shows a strong correlation to the growth conditions. Cubic GaN has also been grown using rf MBE, and the surface has been investigated. The surface was found to have several reconstructions depending on the Ga-adatom coverage on the surface. Moreover, the surface reconstructs to form a tetramer when Ga-adatoms are removed. Both ScN and GaN have been investigated for spintronic applications. Most recently, amorphous indium boron nitride alloy has been grown by radio frequency magnetron sputtering. The grown ternary films exhibit higher band gaps, compared to binary InN. Currently, we are investigating the oxide materials as well. The growth of the materials will be mainly by pulsed laser deposition (PLD). The main material is zinc oxide. The purpose of the study is to explore the fundamental properties of a new family of ZnO alloys. The experimental results will be also verified using density functional theory calculations provided by our group. Following the successful growth, further investigation will take place in many aspects, such as doping, nanostructuring, processing, device building, etc. In the near future, we are planning to search crystalline boron ternary and quaternary nitride alloys using PLD as well. Recently, our PLD has been equipped by a rf-plasma source, so active nitrogen specie can be generated. Experimental setups used are mainly in: King Saud University (Riyadh, KSA), King Abdulaziz City for Science and Technology (Riyadh, KSA), and Ohio University (Athens, OH, USA). Collaborations with other groups have also contributed to our research program.

Robert Farrell, Postdoctoral Fellow, University of California, Santa Barbara

InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: rmf@ece.ucsb.edu Abstract: Efficiencies exceeding 40% have already been achieved with multijunction (MJ) solar cells operating under high levels of concentration. Currently, at least eight groups have achieved cells with greater than 40% conversion efficiency with no less than six different GaAs-based cell architectures. Most of these designs contain three or four junctions and some provide pathways for adding more junctions, but all are limited to some degree by a present lack of efficient photovoltaic materials with band gaps greater than ~1.9 eV. To achieve efficiencies in excess of 50%, it is likely that future MJ cell architectures will need to include materials with larger band gaps to improve the utilization of photons in the high energy portion of the solar spectrum. With a direct band gap ranging from 0.64 eV for InN to 3.4 eV for GaN, high absorption coefficients of ~105 cm-1 near the band edge, and superior radiation resistance compared to other photovoltaic materials, InGaN appears to be an ideal material for meeting this challenge. In this talk, I will discuss the unique advantages and challenges of making solar cells using InGaN-based materials. Following a discussion of device integration strategies and calculations evaluating the efficiency of various hybrid InGaN-GaAs MJ solar cell designs, the performance of our initial bulk InGaN solar cell designs will be compared with more recent multiple quantum well (MQW) solar cell designs. The effects of polarization on carrier collection will be examined and methods for improving carrier collection will be discussed. Building on these advances, InGaN-based solar cells with record external quantum efficiencies (EQEs), record open circuit voltages (Voc), and positive thermal power coefficients will be presented. Finally, recent progress toward integrating InGaN-based solar cells with high-performance broadband antireflection (AR) coatings and dichroic mirrors will be discussed in the context of achieving an ultrahigh efficiency hybrid InGaN-GaAs MJ solar cell. Biography: Robert Farrell received his BS degree in Electrical Engineering from the University of Illinois, Urbana Champaign (UIUC) in 2003 and his MS and PhD degrees in Electrical Engineering from the University of California, Santa Barbara (UCSB) in 2005 and 2010, respectively. During his graduate work at UCSB, his research focused on the growth, fabrication, and characterization of nonpolar and semipolar InGaN/GaN laser diodes (LDs) and light-emitting emitting diodes (LEDs). This work led to the demonstration of the world’s first m-plane InGaN/GaN LDs, the demonstration of m-plane InGaN/GaN LDs with threshold current densities (1.5 kA/cm2) and peak output powers (1.6 W) comparable to the best state-of-the-art c-plane InGaN/GaN LDs, and advances in understanding the mechanisms underlying the growth of m-plane (Al,In)GaN thin films. Since November 2011, he has been working as a Postdoctoral Fellow in the Materials Department at UCSB. His current research efforts focus on developing InGaN-based solar cells, ultrabroadband optical coatings, and novel device integration techniques for next-generation ultrahigh efficiency multijunction solar cells. This work has led to the demonstration of InGaN-based solar cells with record quantum efficiencies at 450 nm and spectral response extending to 520 nm, advances in understanding of the effects of doping and polarization on carrier collection in InGaN-based solar cells, and the successful integration of InGaN-based solar cells with ultrabroadband anti-reflection (AR) coatings and dichroic mirrors. Robert is the recipient of a National Defense Science and Engineering Graduate (NDSEG) Fellowship (2003), the Best Presentation Award at the UIUC ECE Undergraduate Research Symposium (2003), and the Japanese Journal of Applied Physics (JJAP) Outstanding Paper Award (2008). He has authored or coauthored more than 30 papers, coauthored 1 book chapter, and currently holds 3 patents.

M.A. Gondal, Distinguished Professor King Fahd University of Petroleum and Minerals (KFUPM)

Investigation of Longitudinal Phonon Activity, Spectral Red Shift and Intense Sub-band Emission in Pure and Silver Doped CdS Quantum Dots

Physics Department

King Fahd University of Petroleum and Minerals Dhahran-31261, Kingdom of Saudi Arabia

Email: magondal@kfupm.edu.sa Abstract: Cadmium sulfide quantum dots (Cd 2+S-QD) are known for their widespread photonic and sensing applications owing to the characteristic delta function like sharp density of electronic states which is crucial for the application of radiation detection and optical sensing. Another important feature of the Cd 2+S-QD is that with appropriate dopant (with right concentration), the photoluminescence (PL) peak wavelength can be shifted towards the longer wavelength due to the shrinkage of the band gap energy. This optically maneuverable characteristic together with the nonlinear optical properties and the fast response time make the quantum-confined Cd 2+S-QD system an attractive candidate for the fabrication of various optoelectronic devices such as solar cells, laser diodes, photoconductors, and wavelength converters. In any quantum confined system like Cd 2+S-QD, the electron phonon interaction is an important factor that plays a vital role in deciding the binding energy and optical properties of the material. In this work, Cd 2+S-QD, capped with cetyltrimethylammonium bromide (CTAB), was synthesized as a stable, aqueous, colloidal nanofluid both in pure form and doped with silver ions (Ag 2+) of different concentrations. We performed the PL spectra for both doped and pure Cd 2+S-QD and found that the Cd 2+S-QD with different Cd 2+ concentrations do not make any change to the band gap energy while a systematic red shift in the band gap energy is observed for the Ag 2+ doped Cd 2+S-QD and this red shift increases with the increasing Ag 2+ concentration. Biography: Dr. M. A. Gondal is a Distinguished professor at the Physics Department at King Fahd University of Petroleum and Minerals Dhahran. Dr. Gondal’s research interests are in the areas of atomic and molecular spectroscopy, design and fabrication of different lasers, laser remote sensing, pollution monitoring, development of laser based sensitive techniques, synthesis of nano structured metal oxides and their applications in water purification, corrosion inhibition, petrochemicals, laser desulfurization of crude oil. Dr. Gondal has published over 270 research papers in international journals and conferences of high repute. Five of his recently published papers have been listed in top 25 as cited by Science Direct. Dr. Gondal was awarded Al-Marai Innovation prize for the year 2011for his invention in the field of environment using nano-structured materials. Dr. Gondal was awarded twice the Distinguished (Best) Researcher award by KFUPM for the years 2005-2006 and 2010-2011 based on his research publications and research projects. He is a one of the recipient of the Best Research Paper award, instituted by the British Mechanical Engineers in 2007. Also awarded the Best Paper Award on at 1st International Conference & Exhibition on Laboratory Technology, Manama Bahrain (Oct 20-22, 2008). He is also awarded the best project award for year 2008/2009 by KFUPM. He has been a keynote speaker for many international conferences and workshops. Dr Gondal got Distinguished Professorship Award for 2009/2010. He is a member of the Australian Institute of Physics, the Australian Optical Society, the Association of Professional Engineers and Scientists Australia, the Pakistan Institute of Physics, International Committee on Space Research (COSPAR), American Chemical Society and ex- member of the German Physical Society. He is a member of Editorial Boards of International Journal of Molecular Spectroscopy, Arabian Journal of Science & Engineering and Pakistan Journal of Analytical Chemistry and Environment, Research Journal of Environmental and Earth Sciences, Research Journal of Applied Sciences, Engineering and Technology.

Steve DenBaars, Professor of Materials, Co-Director of the Solid-State Lighting & Energy Center, University of California, Santa Barbara

Energy Savings Potential of LEDs for Energy Efficient Lighting and Future Research Directions in LEDs

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: denbarrs@engineering.ucsb.edu Abstract: LEDs fabricated from gallium nitride have lead to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm/Watt, and external quantum efficiencies higher than 50%. This has enabled LEDs to compete with traditional lighting technologies such as incandescent and CFL. A review of the energy savings potential of LED based lighting compared to traditional technologies will be addressed. The U.S. Department of Energy estimates that in 2030 the energy savings from LED lighting in the U.S. alone would amount to 24 Gigawatt size power plants. Further improvements in materials quality and cost reduction are necessary for wide-spread adoption of LEDs for lighting. Solid-state lighting has the potential to achieve 85% energy efficiency, and be able to run entirely off sustainable energy sources such as either solar, thermoelectric or wind. Key problems and new research directions in solid state lighting technologies will be highlighted. Biography: Dr. DenBaars is a Professor of Materials and Co-Director of the Solid-State Lighting Center at UC Santa Barbara. Professor DenBaars joined UCSB in 1991 and currently holds the Mitsubishi Chemical Chair in Solid State Lighting and Displays. From 1988-1991 Prof. DenBaars was a member of the technical staff at Hewlett- Packard's Optoelectronics Division involved in the growth and fabrication of visible LEDs. He received his PhD in Electrical Engineering from the University of Southern California in 1988. Specific research interests include growth of wide-band gap semiconductors (GaN based), and their application to Blue LEDs and lasers and energy efficient solid state lighting. This research has lead to over 650 scientific publications and over 67 U.S. patents on electronic materials and devices. He has been awarded a NSF Young Investigator award, Young Scientist Award of the ISCS, is an IEEE Fellow, and received the IEEE Aron Kressel Award (w/ Prof. James Speck) in 2010.

Daniel F. Feezell, Senior Device Scientist, University of California, Santa Barbara

Development and Status of Nonpolar/Semipolar III-Nitride  Light-Emitting Diodes

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: feezell@engineering.ucsb.edu Abstract: III-nitrides are attractive materials for a broad range of applications, including energy efficiency, renewable energy, biomedicine, data storage, and displays. Solid-state lighting (SSL) using light-emitting diodes (LEDs) constitutes the largest commercial segment of these applications. However, current commercially available LEDs are grown on the polar c-plane of the wurtzite crystal and their performance is adversely affected by the presence of polarization-related electric fields. Alternatively, growth of III-nitride structures on nonpolar/semipolar orientations presents a viable approach to reducing or eliminating the issues associated with polarization-related electric fields. These orientations also offer increased design flexibility and provide a multitude of unique characteristics such as polarized emission. In this talk, I will introduce and discuss the advantages of nonpolar/semipolar III-nitrides for LEDs. I will then recount the technical development of nonpolar/semipolar LEDs and present recent advances toward high-efficiency, low-droop operation. Biography: Daniel F. Feezell received the Ph.D. degree in Electrical Engineering from the University of California, Santa Barbara (UCSB) in 2005 for work on InP-based vertical-cavity surface-emitting lasers. He is currently a Project Scientist in the Solid-State Lighting and Energy Center at UCSB, where his research interests include growth, fabrication, and characterization of nonpolar/semipolar III-nitrides for energy efficiency and renewable energy applications. Prior to joining UCSB he was a Senior Device Scientist and the first employee at Kaai/Soraa, Inc., where he developed high-performance III-nitride laser diodes and light-emitting diodes. For his role in the achievement of the first nonpolar III-nitride laser diodes he received the 30th Annual Japanese Journal of Applied Physics Paper Award. He also invented an AlGaN-cladding-free nonpolar laser diode structure that is currently being utilized in cutting-edge industry products. For this work he received a commendation for excellence in technical communication from Laser Focus World magazine. He is the author or co-author of more than 30 peer-reviewed conference and journal publications, and has received several patents.

Nelson Tansu, Associate Professor of Electrical & Computer Engineering, Lehigh University Engineering Nanostructures in Active Regions and Device

Configurations for High Efficiency Solid State Lighting

Department of Electrical and Computer Engineering Lehigh University, Bethlehem, PA 18105, USA

Email: tansu@lehigh.edu Abstract: Group III-Nitride semiconductors have tremendous applications for energy efficiency and renewable energy applications. The advances in the field of III-Nitride based light-emitting diodes (LEDs) have led to transformational progress in solid state lighting (SSL), which is a critical energy-efficient technology for society. As compared to traditional incandescent and fluorescent lamps, SSL is more energy-efficient, reliable, and environmentally-friendly. Several major challenges for current state-of-art III-Nitride based LEDs are 1) ‘green gap’ issue in InGaN quantum well light-emitting diodes, 2) ‘efficiency droop’ issue in III-Nitride LEDs resulting in output power quenching at high current injection, and 3) high efficiency configuration for achieving white LEDs structure. In this work, novel approaches to address the major issues related to nitride LEDs will be presented. The studies will include designs, growths, and device characteristics of 1) novel InGaN-based quantum well (QW) structures LEDs with large overlap design for realizing green-emitting LEDs devices with high internal quantum efficiency, 2) surface plasmon dispersion engineering for achieving high internal quantum efficiency in ‘green’ InGaN QW LEDs, and 3) novel InGaN QW LEDs device structure with lattice-matched AlInN-barrier structure to suppress efficiency-droop in nitride LEDs. The use of graded-growth-temperature profiling to realize 3-layer staggered InGaN QW LEDs with large overlap design has led to 2-3 times improvement in radiative efficiency, in comparison to that of the conventional InGaN QW LEDs. In addition to the QW engineering approaches, other approaches to improve the efficiency of the nitride LEDs will be discussed as follow: 1) new growth approach for dislocation density reduction in GaN semiconductor, and 2) novel approaches for light extraction efficiency improvement of III-Nitride LEDs. Biography: Dr. Nelson Tansu was born on October 1977, and he received his B.S. degree (Applied Mathematics, Electrical Engineering, and Physics; with Highest Distinction) and his Ph.D. degree (Electrical Engineering / Applied Physics) from the University of Wisconsin-Madison in May 1998 and May 2003, respectively. Dr. Tansu started as Assistant Professor in the Department of Electrical and Computer Engineering (ECE) and Center for Optical Technologies (COT) at Lehigh University in July 2003, and currently he is the Class of 1961 Chair Associate Professor (with tenure) at Lehigh University. Dr. Tansu was the WARF Graduate University Fellow and Vilas Graduate University Fellow during his graduate studies at Wisconsin, and he was a recipient of Graduate Dissertator Award at Wisconsin. Other selected awards include: Harold A. Peterson Best ECE Dissertation Award (at Wisconsin), Peter C. Rossin Professorship (at Lehigh), the 2008 Libsch Early Career Research Award (at Lehigh), the 2010 Wisconsin Forward Under 40 for Outstanding Young Alumni Award (at Wisconsin), and the Class of 1961 Professorship (at Lehigh). Dr. Tansu’s research works cover both the theoretical and experimental aspects of the physics of semiconductor optoelectronics materials and devices, the physics of low-dimensional semiconductor (nanostructure), and MOCVD and device fabrications of III-Nitride and III-V-Nitride semiconductor optoelectronics devices on GaAs, InP, and GaN substrates. Up to today, Dr. Tansu has published in more than 220+ refereed international journal (81) and conference (140) publications, and he holds several US patents (total > 8). Previously, Dr. Tansu has also given numerous lectures, seminars, and invited talks (total > 42) in universities, research institutions, and conferences in USA, Canada, Europe, and Asia. Dr. Tansu serves as the Primary Guest Editor of the IEEE Journal of Selected Topics in Quantum Electronics (2008-2009), and he also serves as an Associate Editor for IEEE Photonics Journal (2009-present), Associate Editor for OSA Optical Materials Express (2010-present), Associate Editor for Semiconductor Photonics and Technology (2011-present), and Assistant / Associate Editor for Nanoscale Research Letters (2007-present). Dr. Tansu has also served as the Technical Program Committee for several major technical conferences for IEEE, OSA, SPIE, and APS; the selected lists include: IEEE / OSA Conference on Lasers and Electro-Optics, SPIE Photonics West, APS March Annual Meeting, and others. Dr. Tansu was also selected as Invited General Participant at the 2008 National Academy of Engineering (NAE)’s U.S. Frontiers of Engineering (FOE) Symposium, and he served as the Organizing Committee for the 2009 NAE’s U.S. Frontiers of Engineering Symposium. Recently, Dr. Tansu has also been invited to participate in the NAE's 2012 German-American Frontiers of Engineering Symposium (GAFOE).

Yasushi Nanishi, Professor of Photonics, Ritsumeikan University Application of DERI Method to Thick InGaN and InN/InGaN

MQW Structure Growth 

Global Innovation Research Organization Ritsumeikan University, Kusatsu, 525-8577, Japan

& Department of Materials Science and Engineering Seoul National University, 151-744, Seoul, Korea

Email: nanishi@se.ritsumei.ac.jp Abstract: Difficulties in growing high quality InN and In-rich groupⅢ-nitride alloys hinder applications of these material system to electronic and optoelectronic devices. Main difficulty for growth comes from its low dissociation temperature and high equilibrium nitrogen vapor pressure during growth. In droplets which form on the growing surface give another essential problem for high quality InN growth. We have proposed a new RF-MBE growth method called DERI (Droplet Elimination by Radical Beam Irradiation) very recently to solve this droplet problem. This growth method is composed of the two series of growth steps with In-rich growth step (MRGP: Metal Rich Growth Process) and consecutive nitrogen radical beam irradiation step (DEP: Droplet Elimination Process). The method enabled reproducible growth of high-quality InN film with flat surface. In-droplet formation and elimination processes were monitored by both in situ RHEED and laser beam reflection. It was suggested that during DERI process, the surface tries to keep its stable condition with two effective mono-layers of metal with additional localized droplets, when InN are grown under metal rich condition. DERI method was also applied to the growth of InGaN alloys very recently. Alloy composition of the grown layer was found to change dramatically depending on Nitrogen radical beam intensity even when Ga and In beam intensities were kept constant. This should have resulted from preferential capturing process of Ga from Ga/In wetting layers and droplets when InGaN layers were grown under metal rich conditions. In atoms swept out of the growing interface stays either as wetting layer or as droplets. These In atoms transform to InN during DEP. Repeating this process, InN/InGaN MQW structure was successfully fabricated. For thick and uniform InGaN growth, phase separation should become a very serious problem. It was shown that phase separation was suppressed and uniform InGaN was obtained by keeping constant Ga beam supply even during DEP. Possible mechanism to explain this successful result will be demonstrated. Large lattice mismatch between InN and GaN is an essential issue when wide range of band gap is effectively used in practical devices. Possible new approaches to passivate generated dislocation will also be proposed. This work was supported by MEXT through Grant-in Aids for Scientific Research (A) #21246004. And ALCA project of JST. This is also partly supported by WCU hybrid materials program of MSE at Seoul National University. Biography: Yasushi Nanishi was born in Tokushima Prefecture, Japan in 1945. He received a B.E. degree from Nagoya Institute of Technology in 1969 and M.E. and Ph. D. degrees from Nagoya University in 1971 and 1986, respectively. From 1971 to 1994, he was a member of a research staff at NTT LSI and Opto-electronics Laboratories, Atsugi, Japan. From 1978 to 1980, he was a visiting scientist at Massachusetts Institute of Technology. From1994 to 2011, he was a professor in the Department of Photonics at Ritsumeikan University. Since 2009, he has been a WCU professor at Dep. of Materials Science and Engineering, Seoul National University. He is appointed as a professor of Global Innovation Research Organization of Ritsumeikan University in 2011. He has been engaged in the research fields concerning GaAs MES FETs, LPE of GaAs, growth and characterization of bulk GaAs, correlation between GaAs crystal defects and FET performances and Plasma Excited MBE. He worked on MBE growth of Nitride Semiconductors and its application to both electronic and optoelectronic devices for the last 17 years. His latest interest is growth and characterization of InN and relates alloys. He has been a leader of NEDO's regional consortium project and METI's national project on high-power, high-frequency GaN electronic devices. Since 2006, he has been a leader of MEXT’s Project on Nitride Semiconductor Optoelectronics Frontier, supported by Grant in Aid for Scientific Research in Priority Area. He is a member of The Japan Society of Applied Physics, The Institute of Electronics, Information and Communication Engineers, The Japanese Association for Crystal Growth and American Material Research Society. He has received best paper Award from Japanese Association for Crystal Growth and The Japan Society of Applied Physics in 2004 and 2005, respectively. He received Fellow Award from The Japan Society of Applied Physics in 2008. He received the First Compound Semiconductor Electronics Award of The Japan Society of Applied Physics in 2011.

Debdeep Jena, Associate Professor of Electrical Engineering University of Notre Dame

Exploiting Polarization in III-Nitride Optoelectronics: Not Always an Enemy 

Department of Electrical Engineering University of Notre Dame, Notre Dame, IN 46556, USA

Email: djena@nd.edu Abstract: Polarization fields in III-Nitride heterostructures are responsible for quantum-confined Stark effect and consequent degradation in optical transition efficiencies. However, we show that in carefully polarization-engineered heterostructures, polarization fields can be turned around our advantage. In particular, we show that graded heterostructures can use polarization to achieve high p-type doping increasing the hole injection efficiency. At the same time, it can help relax requirements on large band-offset electron blocking layers made of abrupt heterostructures. The importance of such a strategy increases as band gaps increase, in the shorter wavelength regions. Even for long-wavelength emitters, a lot can be gained by employing polarization-matched heterostructures, and tunnel junctions to get around the low hole concentrations intrinsic to III-Nitrides. Biography: Debdeep Jena received the B. Tech. degree with a major in Electrical Engineering and a minor in Physics from the Indian Institute of Technology (IIT) Kanpur in 1998, and the Ph.D. degree in Electrical and Computer Engineering at the University of California, Santa Barbara (UCSB) in 2003. He joined the faculty of the department of Electrical Engineering at the University of Notre Dame in 2003. His research and teaching interests are in the MBE growth and device applications of quantum semiconductor heterostructures (currently III-V nitride semiconductors), investigation of charge transport in nanostructured semiconducting materials such as graphene, nanowires and nanocrystals, and their device applications, and in the theory of charge, heat, and spin transport in nanomaterials. He is the author on several journal publications, including articles in Science, Physical Review Letters, and Electron Device Letters among others. He has received two best student paper awards in 2000 and 2002 for his Ph.D. dissertation research, the NSF CAREER award in 2007, and the Joyce award for excellence in undergraduate teaching in 2010.

Iman Roqan, Assistant Professor of Material Science and Engineering King Abdullah University of Science and Technology (KAUST) Studying III-Nitrides and ZnO Semiconductors for Visible Optoelectronic

Devices and a New Generation of Spin LEDs

Physical Sciences & Engineering Division King Abdullah University of Science and Technology

Thuwal, 23955-6900, Kingdom of Saudi Arabia Email: iman.roqan@kaust.edu.sa

Abstract: Rare earth (RE-) doped wide-bandgap semiconductors (WBGSs) hold promise for many potential applications in optoelectronic devices, spin light emitting diode and spintronic transistors. The doping of Gd into GaN was reported to exhibit the highest magnetic moment (~ 4000 µB/Gd). A large number of research activities have focused on RE doped III-nitrides and ZnO. Here, we report studies of Gd-doped zinc oxide (ZnO) films grown by PLD. The films were grown with various atomic percentages of Gd (0.1 to 2 wt%). We observed a strong ferromagnetic signal from Gd doped ZnO. We observed that all the three films were ferromagnetic at 5 K and at room temperature. The lowest Gd concentration (0.1 wt%) concentration were found to be with the highest moment (12.35 µB/Gd at 5 K) and it decreased up on increasing the Gd concentration. Photoluminescence spectra of the films showed that Gd doping introduce defects in the band gap. Hall measurements showed that Gd 0.5 wt% doped ZnO deposited at 5 mTorr of O2 were ‘n’ type, whereas Gd 0.5wt% doped ZnO thin film deposited at 25 mTorr of O2 showed ‘p-type’ conductivity with a hole concentration of 7.4 x1021cm-3. This value is similar to that observed in As doped ZnO . The second part of the talk we will present out polarization studied on InGaN epilayers. InGaN semiconductors played a crucial role in blue and visible light emitting diodes and laser diodes. Therefore, much research focused on the optical properties and the band structure of InGaN. One of the important topics in this field is studying the strain and the optical anisotropy of the valence band. We will present polarization optical measurements of thin InGaN epilayers (45nm) grown by MOCVD with different In concentrations (0.3 to 23%) on c-plane sapphire. The polarization measurements showed the degree of strain and optical anisotropy in the strained InGaN epilayer with ~ 15 % of In grown on polar sapphire. The PL showed a strong strained peak and a weak peak due to relaxed part in the strained epilayer. PL excitation was employed to determine the bandgap of the epilayer. Biography: Dr. Iman Roqan is an assistant professor of Materials Sciences & Engineering. She has done significant work in fundamental study of III-N nanostructuers, the material system that enabled high efficiency LEDs for SSL. Dr. Roqan was the first to develop theoretical and experimental studies on rare-earths doped GaN that will significantly enhance the performance of SSL devices. She has published extensively in this specific field and has successfully developed international collaboration with many accomplished research groups. During her doctoral degree she contributed in a research grant from the UK Synchrotron Radiation Source at the Science & Technology Facilities Council - Daresbury Laboratory. She received several students awards during her PhD: C R Barber Trust, Institute of Physics (IOP); The Condensed Matter and Material Physics (CMMP) Division, Institute of Physics; Semiconductor Division, Institute of Physics (IOP); Material Research Society, Boston; The UK Nitrides Consortium; and Strathclyde University, Glasgow, Scotland. In addition, Scholarship from the Higher Education Ministry of Saudi Arabia to obtain PhD and MSc degrees. Dr. Roqan has set collaboration with nine international laboratories in Europe during the course of her doctoral work. Currently, she is establishing several collaborative works with international institutes and industrial companies. Dr Iman is a member of institute of Physics (IOP) and IEEE. In addition, she is a member of Graduate Women in Science GWIS (international chapter) and a charter member of the international arm of GWIS.

Kathryn M. Kelchner, University of California, Santa Barbara

Progress in Growth, Characterization and Device Performance for

Nonpolar and Semipolar GaN-based Laser Diodes

Materials Department University of California, Santa Barbara, CA 93106, USA

Email: kelch@ece.ucsb.edu Abstract: GaN and its alloys with InN and AlN have revolutionized the solid-state lighting market for their ability to emit a wide range of wavelengths in the visible spectrum. Recently, GaN-based laser diodes (LDs) have emerged as the leading candidate for blue and green direct-emission light sources for next generation lighting and display technologies including full-color displays and mobile projectors. However, due to the non-symmetric nature of the GaN crystal structure, it is naturally polarized along the basal c-plane direction and devices grown along the c-plane plane suffer from large internal electric fields due to polarization discontinuities at hetero-interfaces, which may limit their efficiency. There are certain crystal orientations of GaN that are free from these polarization-induced electric fields, referred to as nonpolar planes, which have also shown increased radiative efficiency and higher material gain. In addition, there are several semipolar crystal orientations with reduced electric fields, and in some cases have also shown increased propensity of Indium incorporation for InGaN QWs. This talk will discuss further the benefits and challenges of nonpolar and semipolar GaN for LD applications, and review recent progress in MOCVD growth, material quality and device design for LDs emitting in the violet, blue and green spectrums. Biography: Kathryn Kelchner received her Bachelor of Science degree in Electrical Engineering from California Polytechnic State University, San Luis Obispo in 2004 and her Master of Science in Electrical and Computer Engineering from University of California at Santa Barbara (UCSB) in 2007. She is currently a researcher and Ph.D. candidate at UCSB, working within the Solid State Lighting and Energy Center (SSLEC) under the guidance of Professors James S. Speck, Shuji Nakamura and Steven P. DenBaars. Her work focuses on the MOCVD growth, material characterization, device design, cleanroom processing, and characterization of GaN-based LEDs and laser diodes, with particular emphasis on nonpolar m-plane GaN laser diodes emitting in the true blue spectrum (450-460 nm).

Nadarajah Narendran, Professor/Director of Research, Lighting Research Center, Rensselaer Polytechnic Institute (RPI) LED luminaires: Are they ready to compete with traditional

light source luminaires in illumination applications?

Lighting Research Center Rensselaer Polytechnic Institute, Troy, NY 12180, USA

Email: narenn2@rpi.edu Abstract: There is no doubt today that LEDs (light-emitting diodes) have advanced to a stage where they are useful and well-adapted to certain lighting applications. This presentation describes the process of creating successful LED lighting, from device to application. Included in this discussion are the challenges involved in tailoring LED systems to produce light that supports the human visual system; the necessary requirements for an LED luminaire to have long life and meet users’ needs; and the innovative thinking required to develop lighting applications that take advantage of the LED’s benefits, including the best current and near-term applications for white LEDs. Biography: Nadarajah Narendran, Ph.D., is the director of research at the Lighting Research Center and a professor in the School of Architecture at Rensselaer Polytechnic Institute, Troy, New York. Dr. Narendran is well known throughout the lighting industry for his pioneering research in the field of solid-state lighting. His focus is in the areas of LED performance, packaging, and lighting application. Narendran leads a team of researchers and educators working to accelerate the development and market transformation of this promising technology. Additionally, he organizes the Alliance for Solid-State Illumination Systems and Technologies (ASSIST), an international organization of researchers, manufacturers, and government agencies dedicated to overcoming the technological hurdles facing LED lighting and helping speed its market acceptance. Narendran has authored more than 75 articles in archival journals and proceedings and holds several patents. He is a Fellow of the Illuminating Engineering Society of North America.

Ghassan Jabbour, Professor of Electrical and Materials, Director of Solar and Alternative Energy Science and Engineering Research Center King Abdullah University of Science and Technology 

Polymer LEDs for Solid-State Lighting

Physical Sciences & Engineering Division King Abdullah University of Science and Technology,

Thuwal, 23955-6900 Saudi Arabia Email: ghassan.jabbour@kaust.edu.sa

Biography: Ghassan E. Jabbour was the Director of the Advanced Photovotaics, Director of Research-Optoelectronic Materials and Devices at the Flexible Display Center (FDC), and a Professor of the School of Materials at Arizona State University (ASU). Prior to Professor Jabbour was on the faculty of Optical Sciences Center where he still holds an adjunct research professor appointment. Professor Jabbour is also an adjucnt research faculty at ASU, and Imperial College in London. He is an Associate Editor of IEEE JDT. He is also on the Editorial Board of the New Journal of Recent Patents on Material Science. Professor Jabbour is a Guest Eidtior for the MRS Bulletin issue on Organic Photovoltaics (January 2005). He is also the chair and/or co-chair and on the committees of over 150 conferences related to photonic and electronic properties as well as printing of electronic and photnic materials and devices. Professor Jabbour attended Northern Arizona University, the Massachusetts Institute of Technology (MIT), and the University of Arizona. His research projects include Solar Cells, Energy Storage, Flexible Nanothick Electronics and Photonics; Nano and Macro Printed and Patterned Optical, Electronic and Optoelectronic Materials and Devices; Prof. Jabbour has more than 400 papers, invited talks and proceedings. He holds several patents and has edited several books related to the areas of energy, nanotechnology, and functional optoelectronics. Prof. Jabbour’s work has been featured by editors of Nature, Nature Photonics, Science, MRS Bulletin, Advanced Materials (four times on cover of journal), MIT Technology Review, USA Today, Boston Globe, CNN, FOX News, LA Times, PC magazine, etc. Prof. Jabbour is a Fellow of SPIE for his numerous and significant contributions to the field of flexible, printed and organic electronics. Among the achievements of his group are the demonstration of the first printed photovoltaic cell using soft materials, whitish excimer based organic light emitting diode with nearly 100% internal quantum efficiency, first inkjet printed and patterned RGB quantum dot light emitting diode, first screen printed nanothick OLED, and many other advances. For his noted accomplishments in printed electronics and photonics, Professor Jabbour received the prestigious Academy of Finland Distinguished Professor award . In 2006, he received the Best Poster Award (jointly awarded by the USA National Academy of Engineering / the Engineering Academy of Japan, and the Japan Science and Technology Agency). He is currently the Director of KAUST Center for Solar and Photovoltaics Engineering Research Center, a Named Professor of Materials Science and Engineering, and Professor of Electrical Engineering. Prof. Jabbour is Rawabi Holdings Research Chair in Solar and Voltaics, the first endowed chair given to a professor at KAUST. In 2011, Prof. Jabbour was elected to the rank of Fellow of the European Optical Society. His election recognizes his “outstanding contributions in the multidisciplinary fields of optics and photonics, his role inside the optical community, his great support for the European Optical Society, and especially for his contributions and innovations in printed and flexible nanothick photonics and photovoltaics” .

Gregory K.L. Goh, Senior Scientist, Institute of Materials Research and Engineering (IMRE) , Singapore

Growing ZnO in Water

Institute of Materials Research and Engineering Agency for Science, Technology, and Research (A*STAR)

3 Research Link, Singapore 117602, Singapore Email: g-goh@imre.a-star.edu.sg

Abstract: ZnO continues to attract considerable attention due to its potential applications in UV detection, LEDs, spintronics, gas and biosensors, field effect transistors, field emission, photovoltaics and photocatalysis. Many of these applications require epitaxial films or nanostructured morphologies and ZnO is popular for these applications due to the ease of synthesizing a myriad of nano-forms (e.g. rods, rings, particles, belts) by solution methods. Solution methods are of particular interest because of the low temperatures employed (often < 100oC) and the ease of forming single crystal films and nanostructures, making it suitable for large area processing at potentially lower costs. Often, post growth annealing is required to optimize properties and this study shows that such annealing leads to previously unreported formation of pores within epitaxial films and also in single crystal nanorods. It is believed that these pores form upon coalescence of anion and cation vacancies. Pore formation can be detrimental, adversely affecting transparency and mobility but can also be beneficial, increasing surface area which would be useful for sensing and photocatalytic applications. As such, more detailed investigations concerning pore formation is undertaken such as the determination whether pores exists in as-synthesized nanostructures and whether Oswald ripening of these pre-existing pores could instead be responsible for the meso- and macropores observed. A variety of characterization techniques such as scanning transmission electron microscopy (STEM), tomography, absorption spectroscopy and total scattering diffraction experiments are planned. Biography: Dr. Gregory Goh obtained his Ph.D from the University of California, Santa Barbara and M.Eng and B.Eng degrees from the National University of Singapore. He is a Senior Scientist at the Institute of Materials Research and Engineering (IMRE). At IMRE, he leads a team utilizing low temperature solutions to grow oxide films and nanostructures for LED, ferroelectric, photovoltaic and photocatalytic applications. His earlier work has been summarized in a book chapter by American Scientific Publishers that studies the growth and integration of nanostructured materials by solution methods and the effect of the growth solution on subsequent properties. Dr. Goh is an Associate Editor for Nanoscience and Nanotechnology Letters (USA) and an Adjunct Associate Professor at the Nanyang Technological University.

Mohammad Alsunaidi, Professor of Electrical Engineering King Fahd University of Petroleum and Minerals (KFUPM)

Global Modeling of Broadband LED Structures

Department of Electrical Engineering King Fahd University of Petroleum and Minerals

Dhahran-31261, Kingdom of Saudi Arabia Email: Mohammad.Alsunaidi@kaust.edu.sa

Abstract: Modeling of light emitting devices is a challenging and multi-faceted task. The complication arises not only from the complex physical processes that take place within the device, a number of which are not completely understood yet, but also from the diversity of interactions that decide the fate of optical emission. The aim of the “Global Modeling” techniques is to unify all the physical processes that take place in a typical state-of-the-art nano-scale solid-state light source into a coupled model. This unification strategically includes the electromagnetic analysis of light guiding, polarization, trapping, dispersion, absorption, amplification, focusing and collection. It also includes the semiconductor theory used to obtain physical models of carrier transport and spontaneous light generation through carrier recombination taking full account of quantum well band structures and associated quantum corrections. Models describing material properties and the mechanisms affecting the yield of the device such as carrier injection, current crowding and leakage, self-heating, heat extraction, packaging, and encapsulation are also coupled. Global device modeling approach is very much suited for the computational and visualization capabilities available at KAUST. Biography: M A Alsunaidi is a professor of photonics and computational electromagnetics at King Fahd University of Petroleum & Minerals (KFUPM). His research interests are primarily in physical modeling of linear and non-linear phenomena related to light-matter interaction in integrated photonic devices and the design and analysis of novel nano-photonic and plasmonic devices with applications in optical communications, switching, biosensing and imaging. He pioneered the “Global Modeling” research concepts and strategies which have inspired many researchers to pursue in different engineering disciplines. Currently, Alsunaidi is a visiting professor at Photonics Lab., KAUST.

Andrea Fratalocchi, Assistant Professor of Electrical Engineering King Abdullah University of Science and Technology (KAUST)

Light Harvesting: Making Energy from Chaos 

Physical Sciences & Engineering Division King Abdullah University of Science and Technology

Thuwal, 23955-6900, Kingdom of Saudi Arabia Email: Andrea.Fratalocchi@kaust.edu.sa

Abstract: Energy harvesting is a problem of utmost importance in science. In this talk I will discuss my recent activity in this field, and illustrate a new mechanism of energy harvesting based on chaos. Theory and experiments will demonstrate that complex light matter interactions, if properly mastered, can lead to a tremendous increase in the energy harvested in optical media, which will pave the way to new complexity-driven architectures for lighting and energy applications. Biography: Prior to join KAUST, A. Fratalocchi was a Kaust Research Fellow, working at Sapienza University under the KAUST GCR Fellowship Award. From 2007 to 2009, A. Fratalocchi worked as a post-doc researcher at Sapienza University under a Grant from the research center “Enrico Fermi” <http://www.centrofermi.it/>. A. Fratalocchi has long-standing expertise as a referee of the highest impact factor journals (including Physical Review Letters/A/E, Optics Letters and Optics Express), as well as writing international project and in organizing conferences.·Among the most important scientific results there include the theory of superconducting dynamics in “accelerated” lattices, the study of “Universality” of physical models, the All-optical Landau-Zener effect in optical lattices, the demonstration of discrete solitons, their angular steering and breathers in nematic liquid crystals; more recently: the development of parallel 3D+1 Maxwell-Bloch Finite-Difference Time-domain (MB-FDTD) codes and FDTD coupled to Molecular Dynamics (MD) and Time-Dependent Density Functional Theory (TDDFT), the theory of nonlinear waves for hard X-rays in nano/angstrom regimes, the thermodynamics of soliton gases and complex systems with nonclassical measures, the three dimensional·*ab-initio* study of random lasers, Anderson localization of light and single molecule diffraction. After three years of post doctoral research, A. Fratalocchi’s authored more than 50 articles in international peer-reviewed Journals (including one Book, one Nature Physics, one Nature Photonics, 4 Physical Review Letters, 2 Applied Physics Letters, 7 Optics Letters, 7 Optics Express), and published 40 papers in conferences, with 11 invited contributions. His articles resulted in more than 400 citations, reaching an h-factor of 13 (measured from ISI Web Of Science).

Erin Young, Project Scientist, University of California, Santa Barbara

Stress Relaxation in Semipolar Nitride Alloys

Solid State Lighting and Energy Center University of California, Santa Barbara, CA 93106, USA

Email: erin@engineering.ucsb.edu Abstract: Nonpolar (NP) and semipolar (SP) GaN-based devices have shown great promise for improved optoelectronic device performance in comparison with c-plane (0001) structures due to the absence (NP) or reduction(SP) of polarization-related internal electric fields. One of the recent surprising results is that semipolar GaN-based heterostructures show misfit stress relaxation via threading dislocation glide at acritical thickness only slightly larger than the Matthews-Blakeslee critical thickness. In this talk, we will review UCSB work on stress relaxation in MBE and MOCVD grown semipolar AlGaN/GaN and InGaN/GaN heterostructures, primarily on (11-22) or (20-21) planes. Stress relaxation via misfit dislocations opens up new possibilities for device design based on semipolar orientations; devices can either be designed to be coherent within Matthews-Blakeslee critical thickness limits, or engineered as metamorphic structures on relaxed buffers with tailored lattice constant. This concept has the potential to expand the wavelength range of devices possible on GaN substrates both further into the visible spectrum (green/yellow) with relaxed InGaN buffers or deeper into the UV with relaxed AlGaN buffers. Biography: Erin C. Young completed the PhD degree in Materials Engineering at the University of British Columbia in 2006. Her doctoral research focused on the structure and properties of dilute nitride and bismide III–V semiconductor alloys grown by molecular beam epitaxy. Since 2007, she has worked in the Solid State Lighting and Energy Center at the University of California, Santa Barbara, initially as a Natural Sciences and Research Council of Canada Postdoctoral Fellow, and more recently as a Project Scientist. Her current research interests are epitaxial growth and structural characteristics of III-nitride films for devices and stress relaxation mechanisms in thin films. She has an MASc from the University of British Columbia and a B.Eng from McMaster University in Materials Science.