ACEPACK DRIVE

Features

• AQG 324 qualified• 1200 V blocking voltage• 3.5 mΩ of typical RDS(on)

• Maximum operative junction temperature TJop = 175 °C• Very low switching energy• Low inductive compact design for higher power density• Si3N4 AMB substrate to improve thermal performance• SiC Power MOSFET chip sintered to substrate for improved lifetime• 4.2 kV DC 1 s insulation• Directly liquid cooled base plate with pin-fins• Three integrated NTC temperature sensors• Long AC bus bar compatible with phase current sensor

Application• Traction main inverter

DescriptionThe ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electricvehicles traction inverters. This power module features switches based on the siliconcarbide 2nd generation Power MOSFETs, characterized by very low RDS(on), verylimited switching losses and an outstanding performance in synchronous rectificationmode.

These characteristics can ensure a superb efficiency in the final application savingbattery charging cycles. In addition, the copper base plate with a pin-fin basestructure makes direct fluid cooling available for this power module minimizingthermal resistance.

A dedicated pin-out has been developed to obtain the best switching performanceswhile press-fit pins ensure an optimal connection with the driving board.

Product status link

ADP300120W2-L

Product summary

Order code ADP300120W2-L

Marking ADP300120W2-L

Package ACEPACK DRIVE

Leads type Press fit

Packing Tray

Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 3.5 mΩ typ. SiC MOSFET gen.2 based

ADP300120W2-L

Datasheet

DS13698 - Rev 2 - April 2021For further information contact your local STMicroelectronics sales office.

www.st.com

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1 Electrical ratings

1.1 Inverter switch(TJ = 25˚C, unless otherwise specified).

Table 1. Absolute maximum ratings - MOSFET

Symbol Parameter Value Unit

V(BR)DSS Drain-source breakdown voltage 1200 V

VGS Gate-source voltage -10 to 22 V

VGSopGate-source voltage - recommendedoperational values -5 to 18 V

IDN (1) Nominal implemented current (limited bybonding wires) 860 A

ID (1)Continuous drain current at Tfluid = 65 °C

(refer to TJmax = 175 °C)290 A

IDM (2) Repetitive peak drain current 950 A

PTOT Total power dissipation at Tfluid = 65 °C 833 W

TJOperative junction temperature range underswitching conditions -40 to 175 (3) °C

1. Defined by design, not subject to production test.2. Pulse width limited by maximum junction temperature.3. Maximum baseplate temperature has to be always limited to 125 °C.

ADP300120W2-L Electrical ratings

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Table 2. Electrical characteristics of the single switch

Symbol Parameter Test conditions Min. Typ. Max. Unit

RDS(on) (1) Static drain-source on-resistance

VGS = 18 V, IDS = 300 A 3.5

mΩVGS = 18 V, IDS = 300 A, TJ = 150 °C 6.5

VGS = 18 V, IDS = -300 A 3.2

VGS = 18 V, IDS = -300 A, TJ = 150 °C 6.0

VGS(th) Gate threshold voltage VDS = VGS, IDS = 40 mA 1.9 3.1 V

IDSSZero gate voltage draincurrent

VGS = 0 V, VDS = 1200 V 100 μA

VGS = 0 V, VDS = 1200 V, TJ = 150 °C 2 mA

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V 2 µA

Ciss Input capacitance

VDS = 800 V, f = 1 MHz, VGS = 0 V

26.4

nFCoss Output capacitance 1.12

Crss Reverse transfer capacitance 0.22

Qg Total gate chargeVDS = 800 V, ID = 400 A,

VGS = -5 V to 18 V

1.18

µCQgs Gate-emitter charge 0.33

Qgd Gate-collector charge 0.44

Eon (2) Turn-on switching energyVDD = 800 V, VGS = -5 to 18 V,

RG = 10 Ω, IDS = 300 A30.1 mJ

Eoff Turn-off switching energyVDD = 800 V, VGS = -5 to 18 V,

RG = 4.7 Ω, IDS = 300 A16.1 mJ

RthJF (3) Thermal resistance, junction-to-fluid (flow rate = 10 LPM, Tfluid = 65 °C,single switch) 0.12 °C/W

1. RDS(on) is referred to switch level.

2. Using active Miller clamp circuit.3. Simulated value considering 50% water / 50% ethylene glycol cooling fluid.

Table 3. Electrical characteristics - source-drain diode of the single switch

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Forward on voltage drop VGS = 0 V, ISD = 300 A 3 V

trr Reverse recovery timeISD = 300 A,VDD = 800 V, VGS = -5 V to 18 V,

RG= 10 Ω

32 ns

Qrr Reverse recovery charge 1.6 µC

IRRM Reverse recovery current 85 A

Erec Reverse recovery energy 0.14 mJ

Note: Values are calculated taking in account an active Miller clamp circuit.

ADP300120W2-L Inverter switch

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2 NTC

Table 4. Absolute maximum ratings for NTC temperature sensor, considered as stand-alone

Symbol Parameter Test condition Min. Typ. Max. Unit

R25 Resistance T = 25 °C 5.0 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50B-constant

3375 K

B25/80 3411 K

T Operating temperature range -40 150 °C

ADP300120W2-L NTC

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3 ACEPACK DRIVE power module details

Table 5. Ratings for module

Symbol Parameter Value Unit

VISO Isolation voltage (f = 0 Hz, t = 1 s) 4.2 kV

Internal isulation (class 1, IEC 61140) Si3N4

Baseplate module material Ni plated, Cu baseplate

dcreep Creepage distanceTerminal to heat sink 9.0 mm

Terminal to terminal 9.0 mm

dclear Clearance distanceTerminal to heat sink 4.5 mm

Terminal to terminal 4.5 mm

CTI Comperative tracking index >200

Ls Typical stray inductance drain to source module loop 10 nH

Rs Typical module lead resistance, terminals to chip 0.5 mΩ

Tstg Storage temperature range -40 to 125 °C

ADP300120W2-L ACEPACK DRIVE module details

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4 Electrical characteristics (curves)

Figure 1. Typical output characteristics (TJ = -40°C)

GADG120120211012OCH

500

400

300

200

100

00 1 2 3 4

ID (A)

VDS (V)

VGS =20V

18V16V

14V

12V

Figure 2. Typical output characteristics (TJ = 25°C)

GADG120120211015OCH

500

400

300

200

100

00 1 2 3 4

ID (A)

VDS (V)

VGS =20V

18V

16V

14V

12V

Figure 3. Typical output characteristics (TJ = 150 °C)

GADG120120211013OCH

500

400

300

200

100

00 1 2 3 4

ID (A)

VDS (V)

VGS = 20V

18V16V

14V12V

Figure 4. Typical reverse conduction characteristics (TJ =-40°C)

GADG120120211014OCH

-100

-200

-300

-400

-500

-600-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =-5V

-3V

16V

0V18V

Figure 5. Typical reverse conduction characteristics (TJ =25°C)

GADG120120211251OCH

-100

-200

-300

-400

-500

-600-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =-5V

-3V

16V

0V 18V

Figure 6. Typical reverse conduction characteristics (TJ =150°C)

GADG130120211528OCH

-100

-200

-300

-400

-500

-600-6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS =-5V

16V

18V0V

3V

ADP300120W2-L Electrical characteristics (curves)

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Figure 7. Typical transfer characteristics

GADG12012021017TCH

500

400

300

200

100

00 2 4 6 8 10 12

ID (A)

VGS (V)

VDS =5V

TJ =25°C

TJ =-40°C

TJ =150°C

Figure 8. Normalized breakdown voltage vs temperature

GADG120120211017BDV

1.05

1.00

0.95-50 0 50 100 150

V(BR)DSS (norm.)

TJ (°C)

Figure 9. Typical switching energy vs drain current

GADG120120211019EAS

40

30

20

10

00 100 200 300 400 500

E (mJ) VDD =800V, RGON =10Ω, RGOFF =4.7Ω,VGS =-5 to 18V

ID (A)

Eoff

Eon

Erec

Figure 10. Typical switching energy vs gate resistance

GADG120120211020EAS

24

16

8

00 2 4 6 8 10 RG (Ω)

VDD =800V, ID =300A,VGS =-5 to 18V

Eoff

Eon

Erec

E (mJ)

Figure 11. Typical switching energy vs temperature

GADG120120211252EAS

24

16

8

00 50 100 150 TJ (°C)

VDD =800V, RGON =10Ω, RGOFF =4.7Ω, VGS =-5 to 18V, ID =300A

Eoff

Eon

Erec

E (mJ)

Figure 12. Typical switching energy vs breakdown voltage

GADG120120211021EAS

24

16

8

0350 450 550 650 750 VDS (V)

RGON =10Ω, RGOFF =4.7Ω, VGS =-5 to 18V, ID =300A

Eoff

Eon

Erec

E (mJ)

ADP300120W2-L Electrical characteristics (curves)

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Figure 13. Typical capacitance characteristicsGADG120120211022CVR

104

103

102

10-1 100 101 102

C(pF)

VDS (V)

CIES

COES

CRESf=1MHz

Figure 14. Typical gate charge characteristicsGADG120120211022QVG

15

10

5

0

-50 250 500 750 1000

VGS (V)

Qg (nC)

VDD =800V,ID =400A

Figure 15. Typical transient thermal impedance

GADG120120211023ZTH

0.10

0.05

0.0010-4 10-3 10-2 10-1 100 t (s)

ZthJF(°C/W)

Single pulse, Tfluid = 65 °Cflow rate = 10 LPM

Figure 16. Typical thermal resistance vs flow rate

GADG120120211024TRJ

0.13

0.12

0.114 6 8 10 12 LPM

RthJF(°C/W)

Tfluid = 65 °C

Figure 17. Typical NTC resistance vs temperature

GADG120120211025NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

T(°C)

ADP300120W2-L Electrical characteristics (curves)

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5 Electrical topology and pin description

Figure 18. Electrical topology and pin description

D6

G6

S6-1, S6-2

P3

W

T6

T5

D5

G5

S5-1, S5-2

N3

D4

G4

S4-1, S4-2

P2T4

T3

D3

G3

S3-1, S3-2

N2

D2

G2

S2-1, S2-2

P1

U

T2

T1

D1

G1

S1-1, S1-2

N1

V

ADP300120W2-L Electrical topology and pin description

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6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

6.1 ACEPACK DRIVE package information

Figure 19. ACEPACK DRIVE long tab package outline (dimensions are in mm.)

DM00518615_Long_REV3

ADP300120W2-L Package information

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Figure 20. ACEPACK DRIVE PCB drawing (dimensions are in mm.)

DM00518615_PCB_Rev3

ADP300120W2-L ACEPACK DRIVE package information

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Revision history

Table 6. Document revision history

Date Version Changes

12-Apr-2021 1 First release.

22-Apr-2021 2 Updated title, features and description in cover page.

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Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 NTC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

3 ACEPACK DRIVE power module details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

5 Electrical topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

6 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

6.1 ACEPACK DRIVE package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

ADP300120W2-L Contents

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IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2021 STMicroelectronics – All rights reserved

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